초록

A method of treating a substrate. The method comprises forming a metal-containing layer on at least a selected portion of the substrate during a substrate cleaning process.

대표청구항 ▼

1. A method for processing a substrate surface, comprising: planarizing a substrate surface comprising a conductive material; and forming a metal-containing layer on the substrate surface during substrate cleaning with a cleaning composition comprising an electroless plating solution, wherein fo

1. A method for processing a substrate surface, comprising: planarizing a substrate surface comprising a conductive material; and forming a metal-containing layer on the substrate surface during substrate cleaning with a cleaning composition comprising an electroless plating solution, wherein forming the metal-containing layer comprises spraying the substrate surface with the cleaning composition to dislodge particles or chemicals remaining from the planarizing the substrate surface. 2. The method of claim 1, wherein the planarizing a substrate surface forms a non-conductive surface comprising conductive features and the metal-containing layer selectively forms on the conductive features. 3. The method of claim 2, wherein the conductive features comprise copper. 4. The method of claim 2, wherein the metal-containing layer is formed by an electroless process. 5. The method of claim 1, wherein the substrate surface is subjected to a cleaning process prior to forming the metal-containing layer on the substrate surface. 6. The method of claim 1, wherein the substrate surface is rinsed with de-ionized water prior to forming the metal-containing layer on the substrate surface. 7. The method of claim 1, wherein the metal-containing layer is selected from the group of nickel, tin, cobalt, cobalt tungsten phosphorus, and combinations thereof. 8. The method of claim 1, wherein the electroless plating solution comprises a salt selected from the group of nickel sulphate and tin chloride. 9. The method of claim 1, wherein the method steps for processing a substrate surface comprise a series of instructions disposed in a computer-readable medium adapted to implement instructions for processing the substrate by a chemical mechanical (CMP) system and cleaning apparatus when said instructions are arranged and executed by one or more processors connected to the chemical mechanical (CMP) system and cleaning apparatus. 10. A method of metal processing, comprising: forming a first metal-containing layer on a substrate; forming a planarized structure on the substrate by subjecting the first metal-containing layer to chemical mechanical polishing; and forming a second metal-containing layer on the substrate during substrate cleaning with a cleaning composition comprises an electroless plating solution, wherein forming the second metal-containing layer comprises spraying the substrate with the cleaning composition to dislodge particles or chemicals remaining from the chemical mechanical polishing. 11. The method of claim 10, wherein the forming a planarized structure on the substrate forms a non-conductive surface comprising conductive features and the metal-containing layer selectively forms on the conductive features. 12. The method of claim 11, wherein the second metal-containing layer is formed by an electroless process. 13. The method of claim 11, wherein the conductive features comprise copper. 14. The method of claim 10, wherein.the second metal-containing layer is selected from the group of nickel, tin, cobalt, cobalt tungsten phosphorus, and combinations thereof. 15. The method of claim 10, wherein the second metal-containing layer is a barrier layer. 16. The method of claim 10, wherein the planarized structure formed by the chemical mechanical polishing is subjected to a cleaning process prior to forming the second metal-containing layer on the substrate. 17. The method of claim 16, wherein the cleaning process comprises exposing the planarized structure to de-ionized water.