초록

The present invention relates to a cobalt electroless plating bath composition and method of using it for microelectronic device fabrication. In one embodiment, the present invention relates to cobalt electroless plating in the fabrication of interconnect structures in semiconductor devices.

대표청구항 ▼

1. A process comprising: combining a primary metal and ammonium sulphate in a first solution; mixing tetramethylammonium hydroxide into the first solution to form a second solution; adjusting pH and temperature of the second solution; mixing dimethylamineborane and ammonium hypophosphite into

1. A process comprising: combining a primary metal and ammonium sulphate in a first solution; mixing tetramethylammonium hydroxide into the first solution to form a second solution; adjusting pH and temperature of the second solution; mixing dimethylamineborane and ammonium hypophosphite into the second solution to form a third solution; adjusting pH and temperature of the third solution; and forming a primary metal layer by applying the third solution to a substrate under conditions that cause the primary metal to precipitate onto the substrate. 2. The process of claim 1 wherein the primary metal has a concentration in a range from about 1 gram/liter to about 40 grams/liter in the first solution. 3. The process of claim 1 wherein the ammonium sulphate has a concentration in a range from about 10 grams/liter to about 800 grams/liter in the first solution. 4. The process of claim 1 wherein the tetramethylammonium hydroxide has a concentration in a range from about 30 gram/liter to about 150 gram/liter, when added to 100 ml of the first solution. 5. The process of claim 1 wherein the dimethylamine borane has a concentration in a range from about 1 gram/liter to about 30 grams/liter in the third solution. 6. The process of claim 1 wherein the ammonium hypophosphite has a concentration in a range from greater than 0 gram/liter to about 2 gram/liter in the third solution. 7. The process of claim 1 wherein forming the primary metal layer includes forming a first lamella of the primary metal layer and forming a second lamella of the primary metal layer, and wherein the second lamella has a phosphorous concentration greater than that of the first lamella. 8. The process of claim 7 wherein forming the primary metal layer further includes forming a third lamella of the primary metal layer over the second lamella, and wherein the third lamella has a phosphorous concentration greater than that of the second lamella. 9. The process of claim 1 wherein the primary metal is selected from the group consisting of cobalt, rhodium, iridium, nickel, palladium, platinum, copper, silver, gold, and combinations thereof. 10. The process of claim 1 further comprising adding to the first solution a secondary metal selected from the group consisting of chromium, molybdenum, tungsten, manganese, technetium, rhenium, and combinations thereof. 11. The process of claim 10 wherein the secondary metal is added to the first solution in a concentration of between about 1 gram/liter to about 30 grams/liter. 12. A process comprising: combining cobalt chloride, ammonium sulphate, tetramethylammonium hydroxide, dimethylamine borane, and ammonium hypophosphite in a solution; adjusting the solution's pH; adjusting the solution's temperature; and applying the solution to a substrate under conditions to cause the formation of a cobalt layer onto the substrate. 13. The process of claim 12 wherein adjusting the solutionm's pH comprises adjusting the solution's pH from around 7 to around 10. 14. The process of claim 12 wherein adjusting the solution's temperature comprises adjusting the solution's temperature from around 20° C. to around 60° C. 15. The process of claim 12 wherein the concentration of cobalt chloride in the solution is between around 1 gram/liter to around 40 grams/liter.