Iodine on-demand system for a chemical laser
원문보기
IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0330726
(2002-12-27)
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발명자
/ 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
1 인용 특허 :
6 |
초록
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A system for supplying Iodine gas to a laser cavity includes a cartridge for generating Iodine gas and delivery piping for transporting Iodine gas from the cartridge to the laser cavity. The cartridge includes a hollow, cylindrical casing having an open end. The casing contains a solid preheat mater
A system for supplying Iodine gas to a laser cavity includes a cartridge for generating Iodine gas and delivery piping for transporting Iodine gas from the cartridge to the laser cavity. The cartridge includes a hollow, cylindrical casing having an open end. The casing contains a solid preheat material, a solid mixture containing Iodine, and a purge material. An ignitor squib is disposed in the casing near the open end to initiate a burn front. The burn front travels through the preheat material to generate hot gas for preheating the delivery piping, preventing Iodine gas condensation in the piping. Next, the burn front travels through the mixture containing Iodine to generate Iodine gas which flows through the preheated delivery piping to the laser cavity. The burn front then passes through the purge material generating a purge gas to remove any traces of corrosive Iodine gas from the delivery piping.
대표청구항
▼
A system for supplying Iodine gas to a laser cavity includes a cartridge for generating Iodine gas and delivery piping for transporting Iodine gas from the cartridge to the laser cavity. The cartridge includes a hollow, cylindrical casing having an open end. The casing contains a solid preheat mater
A system for supplying Iodine gas to a laser cavity includes a cartridge for generating Iodine gas and delivery piping for transporting Iodine gas from the cartridge to the laser cavity. The cartridge includes a hollow, cylindrical casing having an open end. The casing contains a solid preheat material, a solid mixture containing Iodine, and a purge material. An ignitor squib is disposed in the casing near the open end to initiate a burn front. The burn front travels through the preheat material to generate hot gas for preheating the delivery piping, preventing Iodine gas condensation in the piping. Next, the burn front travels through the mixture containing Iodine to generate Iodine gas which flows through the preheated delivery piping to the laser cavity. The burn front then passes through the purge material generating a purge gas to remove any traces of corrosive Iodine gas from the delivery piping. le cladding layer. 10. The ridge waveguide structure as claimed in claim 1, wherein a height of said current non-injection regions is in a range of 40% to 70% of a height of said current injection region. 11. The ridge waveguide structure as claimed in claim 1, wherein a total length of said current non-injection regions is not more than 10% of a longitudinal length of said ridge waveguide structure. 12. The ridge waveguide structure as claimed in claim 1, further comprising; a cap layer in contact with an tipper surface of said at least current injection region; and a current blocking layer in contact with side walls of said ridge waveguide structure and also in contact with upper surfaces of said current non-injection regions. 13. The ridge waveguide structure as claimed in claim 1, wherein side walls of said ridge waveguide structure comprise non-flat surfaces with a curvature in a direction from a bottom to a top of said ridge waveguide structure. 14. The ridge waveguide structure as claimed in claim 13, wherein said non-flat surfaces with said curvature are obtained by an isotropic etching. 15. The ridge waveguide structure as claimed in claim 1, wherein said ridge waveguide structure extends directly over a stripe-shaped selective region of an upper surface of an etching stopper layer. 16. A ridge waveguide structure of a cladding layer in a semiconductor light emitting device, said ridge waveguide structure extending directly over a stripe-shaped selective region of an upper surface of an etching stopper layer, and said ridge waveguide structure comprising: at least a current injection region; and current non-injection regions adjacent to facets and separating said current injection region from said facets, wherein the current non-injection regions are smaller in height than said at least current injection region, and wherein said at least current injection region and said current non-injection regions are uniform in width from a bottom level to a top level of said ridge waveguide structure, so that side walls of said ridge waveguide structure are continuous and smooth at boundaries between said at least current injection region and said current non-injection side regions. 17. The ridge waveguide structure as claimed in claim 16, wherein the ridge waveguide structure comprises laminations of lower and upper cladding layers, and the lower cladding layer is lower in doping concentration than the upper cladding layer, so that said lower cladding layer has a uniform thickness and said upper cladding layer on said current non-injection regions is smaller in thickness than said upper cladding layer on the current injection region. 18. The ridge waveguide structure as claimed in claim 16, wherein said current injection region of said ridge waveguide structure comprises laminations of lower and upper cladding layers, and said current non-injection regions of said ridge waveguide structure comprise the lower cladding layer, and the lower cladding layer is lower in doping concentration than the upper cladding layer. 19. The ridge waveguide structure as claimed in claim 16, wherein the ridge waveguide structure comprises laminations of lower and upper cladding layers, and said lower cladding layer is higher in refractive index than said upper cladding layer, so that said lower cladding layer has a uniform thickness and said upper cladding layer on said current non-injection regions is smaller in thickness than said upper cladding layer on the current injection region. 20. The ridge waveguide structure as claimed in claim 16, wherein said current injection region of said ridge waveguide structure comprises laminations of lower and upper cladding layers, and said current non-injection regions comprise said lower cladding layer, and said lower cladding layer is higher in refractive index than said upper cladding layer. 21. The ridge waveguide structure as claimed in claim 16, wherein the ridge waveguide structure compri
이 특허에 인용된 특허 (6)
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Frey Rudolph W. ; Bolen Philip D., Cartridge excimer laser system.
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Beshore David G. (Newbury Park CA) Ullman Alan Z. (Northridge CA), Fast response iodine vaporization with an integrated atomizer and mixer.
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Taniu Yoshito (Saitama JPX) Shono Mikinori (Yokohama JPX) Wazumi Koichiro (Yokohama JPX) Nishimi Akihiro (Yokohama JPX), Laser generation apparatus.
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Connors Kevin P. ; Hobart James L. ; Reed Edward D. ; Trost David ; Bossie Kenneth J. ; McCurnin Thomas William ; Mitchell Gerald M. ; Yarborough J. Michael, Liquid circulation system for cooling a laser head.
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Benard David J. (Albuquerque NM) Pchelkin Nicholas R. (Los Lunas NM) McDermott William E. (Albuquerque NM) Ellis David E. (Albuquerque NM) Miller George W. (Rio Rancho NM), Method and apparatus for iodine vaporization.
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Verdier Claude (Neauphle Le Chateau FRX) Leporcq Bruno (Paris FRX) Georges Eric (Buc FRX) Barraud Roger (Longjumeau FRX), Process and generator for generating atomic iodine in the fundamental state, and iodine chemical laser employing such.
이 특허를 인용한 특허 (1)
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Brown, Lloyd Chauncey, Contaminant free iodine supply system.
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