IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0269240
(2002-10-11)
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발명자
/ 주소 |
- Nelson, Steven L.
- Christenson, Kurt K.
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출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
38 인용 특허 :
65 |
초록
▼
A method for increasing the quantity of a gas, e.g., ozone, dissolved in a liquid, e.g., ultrapure deionized water, is provided. The gas to be dissolved is introduced to the liquid under pressure and the resulting admixture delivered to the end-use station under pressure. Thus, the method and system
A method for increasing the quantity of a gas, e.g., ozone, dissolved in a liquid, e.g., ultrapure deionized water, is provided. The gas to be dissolved is introduced to the liquid under pressure and the resulting admixture delivered to the end-use station under pressure. Thus, the method and system of the present invention are able to provide, e.g., ozonated water, continuously, efficiently and without cooling, thus providing a simple, cost efficient method of producing high concentration ozonated water for application to an in-process semiconductor wafer.
대표청구항
▼
1. A treatment method comprising the steps of: positioning at least one in-process silicon wafer in a chamber; providing an aqueous composition, said composition being made by a method comprising the step dissolving an amount of ozone into a pressurized aqueous liquid in an amount to form an aqu
1. A treatment method comprising the steps of: positioning at least one in-process silicon wafer in a chamber; providing an aqueous composition, said composition being made by a method comprising the step dissolving an amount of ozone into a pressurized aqueous liquid in an amount to form an aqueous ozone composition; and dispensing the pressurized aqueous ozone composition into the chamber under supersaturated conditions effective to treat the in-process silicon wafer. 2. The method of claim 1, wherein said aqueous liquid additionally comprises a member selected from sulfuric acid, hydrochloric acid, hydrofluoric acid, a fluorinated liquid or combinations thereof. 3. The method of claim 1, wherein the wafer comprises a photoresist material. 4. The method of claim 1, wherein the wafer comprises an organic contaminant. 5. The method of claim 1, wherein said pressurized aqueous liquid is at a pressure of from about 1.1 atmosphere to about 10 atmospheres. 6. The method of claim 1, wherein the liquid additionally comprises a member selected from sulfuric acid, hydrochloric acid, hydrofluoric acid, a fluorinated liquid or a combination thereof, and wherein the wafer comprises a material selected from a photoresist material, an organic contaminant, or a combination thereof. 7. The method of claim 1, wherein the wafer comprises a material on a surface of the wafer, and the treatment step comprises removing at least a portion of the material. 8. The method of claim 1, wherein the wafer comprises an oxidizable material on a surface of the wafer, and wherein the treatment step comprises oxidizing the material. 9. The method of claim 1, wherein the liquid comprises ultrapure deionized water. 10. The method of claim 1, wherein the supersaturated ozone composition comprises at least about 50 ppm of ozone.
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