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A process for isomerization dewaxing of a hydrocarbon feed which includes contacting the hydrocarbon feed with a large pore size, small crystal size, crystalline molecular sieve and an intermediate pore size, small crystal size, crystalline molecular sieve to produce a dewaxed product with a reduced

A process for isomerization dewaxing of a hydrocarbon feed which includes contacting the hydrocarbon feed with a large pore size, small crystal size, crystalline molecular sieve and an intermediate pore size, small crystal size, crystalline molecular sieve to produce a dewaxed product with a reduced pour point and a reduced cloud point. In a preferred embodiment, the feed is contacted with the molecular sieves sequentially, first with the large pore sieve followed by the intermediate pore sieve.

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A process for isomerization dewaxing of a hydrocarbon feed which includes contacting the hydrocarbon feed with a large pore size, small crystal size, crystalline molecular sieve and an intermediate pore size, small crystal size, crystalline molecular sieve to produce a dewaxed product with a reduced

A process for isomerization dewaxing of a hydrocarbon feed which includes contacting the hydrocarbon feed with a large pore size, small crystal size, crystalline molecular sieve and an intermediate pore size, small crystal size, crystalline molecular sieve to produce a dewaxed product with a reduced pour point and a reduced cloud point. In a preferred embodiment, the feed is contacted with the molecular sieves sequentially, first with the large pore sieve followed by the intermediate pore sieve. gas into said deposition chamber to form a layer containing TiN on said substrate; and (f) applying an RF bias to said electrostatic chuck to resputter said layer containing TiN on said substrate while applying said current not exceeding 1.0 amps to said electromagnetic coil. 5. The method of claim 4 wherein step (c) is performed simultaneously with step (d). 6. The method of claim 4 wherein step (e) is performed simultaneously with step (f). 7. The method of claim 4 wherein steps (d) and (f) are performed by applying a negative bias voltage to said electrostatic chuck during the depositions of said layer containing Ti on said substrate and said layer containing TiN on said substrate, respectively. 8. The method of claim 4 wherein steps (d) and (f) are performed by applying a RF bias ranging from about 100 Watts to about 500 Watts. 9. The method of claim 4 wherein step (b) comprises providing a semiconductor wafer having at least one via formed thereon. 10. The method of claim 4 wherein said Ti and TiN layers are deposited into openings within said substrate, wherein said openings are selected from the group consisting of contact holes, vias and trenches. 11. The method of claim 4, further comprising creating a magnetic field, said magnetic field having a magnetic null region located between said cavity region and said substrate. 12. The method of claim 4, further comprising heating said substrate to a temperature in a range from about 25° C. to 350° C. 13. A method of forming a Ti layer and a TiN layer on an integrated circuit substrate in a single PVD deposition chamber without using either a collimator or a shutter, comprising the steps: (a) providing a hollow cathode target containing titanium within said chamber, said hollow cathode target having a cavity region; (b) providing a substrate within said chamber under said hollow cathode target, said substrate attached to an electrostatic chuck; (c) sputtering Ti from said target to form a Ti layer on said substrate by applying a negative volt in a range from about -400 to about -500 volts to said hollow cathode target; (d) applying an RF bias to said electrostatic chuck to resputter said Ti layer on said substrate; (e) sputtering Ti from said target by applying said negative volt to said target and simultaneously flowing a nitrogen-containing gas into said deposition chamber to form a TiN layer on said substrate; and (f) applying an RF bias to said electrostatic chuck to resputter said TiN layer on said substrate. 14. A method of forming a Ti layer and a TiN layer on an integrated circuit substrate in a single PVD deposition chamber without using either a collimator or a shutter, comprising the steps: (a) providing a hollow cathode target containing titanium within said chamber, said hollow cathode target having a cavity region; (b) providing a substrate within said chamber under said hollow cathode target, said substrate attached to an electrostatic chuck; (c) sputtering Ti from said target to form a Ti layer on said substrate by applying an amount of power in a range from about 20 to about 36 kilowatts to said hollow cathode target; (d) applying an RF bias to said electrostatic chuck to resputter said Ti layer on said substrate; (e) sputtering Ti from said target by applying said power and simultaneously flowing a nitrogen-containing gas into said deposition chamber to form a TiN layer on said substrate; and (f) applying an RF bias to said electrostatic chuck to resputter said TiN layer on said substrate. 15. A method of forming a Ti layer and a TiN layer on an integrated circuit substrate in a single PVD deposition chamber without using either a collimator or a shutter, comprising the steps: (a) providing a hollow cathode target containing titanium within said chamber, said hollow cathode target having a cavity region; (b) providing a substrate within said chamber under said hollow cathode target, said substrate attached to an electrostatic ch