초록 ▼

The invention relates to hydroxy-functional (meth)acrylic copolymers having an OH value from 40 to 260 mg KOH/g, a number average molecular mass (Mn) from 1500 to 20000 g/mole and a glass transition temperature Tg from -40° C. to 80° C., containing A) polymerized monomers of at least one epoxy-fu

The invention relates to hydroxy-functional (meth)acrylic copolymers having an OH value from 40 to 260 mg KOH/g, a number average molecular mass (Mn) from 1500 to 20000 g/mole and a glass transition temperature Tg from -40° C. to 80° C., containing A) polymerized monomers of at least one epoxy-functional, olefinically unsaturated monomer, B) at least one compound having a carboxyl group and at least one hydroxyl group in the molecule that is reacted with the epoxy functional group of the polymerized olefincially unsaturated monomers, C) at least one additional polymerized olefinically unsaturated monomer capable of radical polymerization which is different from component A) and D) optionally at least one lactone reacted with the polymer. It also relates to processes for making the copolymers and to coating compositions that contain the hydroxy-functional (meth)acrylic copolymers and to the use thereof in multi-layer automotive coatings.

대표청구항 ▼

The invention relates to hydroxy-functional (meth)acrylic copolymers having an OH value from 40 to 260 mg KOH/g, a number average molecular mass (Mn) from 1500 to 20000 g/mole and a glass transition temperature Tg from -40° C. to 80° C., containing A) polymerized monomers of at least one epoxy-fu

The invention relates to hydroxy-functional (meth)acrylic copolymers having an OH value from 40 to 260 mg KOH/g, a number average molecular mass (Mn) from 1500 to 20000 g/mole and a glass transition temperature Tg from -40° C. to 80° C., containing A) polymerized monomers of at least one epoxy-functional, olefinically unsaturated monomer, B) at least one compound having a carboxyl group and at least one hydroxyl group in the molecule that is reacted with the epoxy functional group of the polymerized olefincially unsaturated monomers, C) at least one additional polymerized olefinically unsaturated monomer capable of radical polymerization which is different from component A) and D) optionally at least one lactone reacted with the polymer. It also relates to processes for making the copolymers and to coating compositions that contain the hydroxy-functional (meth)acrylic copolymers and to the use thereof in multi-layer automotive coatings. f the gases is changed with time to form the carbon film configured such that the rate of the C--F bonds increase continuously or stepwise as the position moves in the direction of the thickness of the film from the side near said base member to the side remote therefrom. 6. The carbon film forming method according to claim 5, wherein said deposition material gas further contains a nitrogen containing gas and the carbon film further containing nitrogen is formed. 7. The carbon film forming method according to claim 5 or 6, wherein said deposition material gas further contains a gas forming at least one of metal, metal compound, silicon and silicon compound and the carbon film further containing at least one of metal, metal compound, silicon and silicon compound is formed. 8. The carbon film forming method according to claim 5, or 6, wherein a deposition chamber formed of a plasma producing chamber and a plasma processing chamber connected thereto is employed as said deposition chamber, said base member is located in said plasma processing chamber, a part of said deposition material gas is supplied into said plasma processing chamber, and the other is supplied into said plasma producing chamber, plasma is formed from the gas supplied into said plasma producing chamber by application of an electric power, the plasma is supplied into said plasma processing chamber to decompose the gas supplied into the plasma processing chamber, and thereby said carbon film is formed on said base member. 9. The carbon film forming method according to claim 5 or 6, wherein a deposition chamber formed of a plasma producing chamber and a plasma processing chamber connected thereto is employed as said deposition chamber, said base member is located in said plasma processing chamber, a gas forming at least one of metal, metal compound, silicon and silicon compound is further used as a further deposition material gas, the gas is supplied into said plasma producing chamber, said hydrocarbon compound gas and said carbon fluoride compound gas are supplied into said plasma processing chamber, plasma is formed from the gas supplied into the plasma producing chamber by application of an electric power, the plasma is supplied into the plasma processing chamber to decompose the gas supplied into the plasma processing chamber, and thereby the carbon film further containing at least one of metal, metal compound, silicon and silicon compound is formed on the base member. 10. The carbon film forming method according to claim 5 or 6, wherein a deposition chamber formed of a plasma producing chamber and a plasma processing chamber connected thereto is employed as said deposition chamber, said base member is located in said plasma processing chamber, a sputter target formed of at least one of metal, metal compound, silicon and silicon compound is located in said plasma producing chamber, said hydrocarbon compound gas and said carbon fluoride compound gas are supplied into said plasma processing chamber, a gas for sputtering is supplied into said plasma producing chamber, an electric power is applied to said gas for sputtering to form plasma therefrom, said plasma as well as sputter particles generated by sputtering effected on said sputter target in said plasma are supplied into said plasma processing chamber to decompose said hydrocarbon compound gas and carbon fluoride compound gas supplied into said plasma processing chamber, and thereby the carbon film containing at least one of metal, metal compound, silicon and silicon compound is formed on said base member. 11. The carbon film forming method according to claim 5, or 6, wherein a deposition chamber formed of a plasma producing chamber and a plasma processing chamber connected thereto is employed as said deposition chamber, said base member is located in said plasma processing chamber, a part of said deposition material gas is supplied into said plasma processing chamber, and the other i