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A ferroelectric device includes a ferroelectric layer and an electrode. The ferroelectric material is made of a perovskite or a layered superlattice material. A superlattice generator metal oxide is deposited as a capping layer between said ferroelectric layer and said electrode to improve the resid

A ferroelectric device includes a ferroelectric layer and an electrode. The ferroelectric material is made of a perovskite or a layered superlattice material. A superlattice generator metal oxide is deposited as a capping layer between said ferroelectric layer and said electrode to improve the residual polarization capacity of the ferroelectric layer.

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1. A method of making a ferroelectric device, said method comprising the steps of: depositing material for a ferroelectric layer on a substrate, said ferroelectric layer being selected from the group consisting of perovskites and self-ordering layered superlattice materials; depositing a non-fer

1. A method of making a ferroelectric device, said method comprising the steps of: depositing material for a ferroelectric layer on a substrate, said ferroelectric layer being selected from the group consisting of perovskites and self-ordering layered superlattice materials; depositing a non-ferroelectric capping layer including a superlattice generator metal adjacent said ferroelectric layer, said capping layer having a thickness in a range of about from 3 nm to 30 nm; depositing an electrode layer adjacent said capping layer; and annealing one or more of said layers. 2. The method as set forth in claim 1 wherein said step of depositing a ferroelectric layer includes depositing a self-ordering layered superlattice material. 3. The method as set forth in claim 1 wherein said step of depositing a capping layer superlattice generator metal includes depositing an identical superlattice generator metal to a superlattice generator metal in said self ordering layered superlattice material. 4. The method as set forth in claim 1 wherein said step of depositing a superlattice generator metal includes depositing bismuth. 5. The method as set forth in claim 1 wherein said step of depositing materials for a ferroelectric layer includes depositing materials for a layered superlattice material selected from the group consisting of strontium bismuth tantalate, strontium bismuth niobate, and strontium bismuth niobium tantalate. 6. The method as set forth in claim 1 wherein said step of annealing comprises diffusing said capping layer into said ferroelectric layer to form a superlattice generator metal-enriched layered superlattice material. 7. The method as set forth in claim 6 wherein said superlattice generator metal-enriched layered superlattice material is not ferroelectric. 8. The method as set forth in claim 6 wherein said superlattice generator metal-enriched layered superlattice material is ferroelectric. 9. The method as set forth in claim 1 wherein said capping layer is deposited on said ferroelectric layer and said electrode is thereafter deposited on said capping layer. 10. A method of making a ferroelectric device, said method comprising the steps of: depositing material for a ferroelectric layer on a substrate, said ferroelectric layer being selected for the group consisting of perovskites and self-ordering layered superlattice materials; depositing a capping layer including a superlattice generator metal adjacent said ferroelectric layer, said capping layer having a thickness in a range of about from 3 nm to 30 nm; depositing an electrode layer adjacent said capping layer; and annealing one or more of said layers. 11. The method as set forth in claim 10 wherein said step of annealing comprises diffusing said capping layer into said ferroelectric layer to form a superlattice generator metal-enriched layered superlattice material. 12. The method as set forth in claim 11 wherein said superlattice generator metal-enriched layered superlattice material is not ferroelectric. 13. The method as set forth in claim 11 wherein said superlattice generator metal-enriched layered superlattice material is ferroelectric. 14. The method as set forth in claim 10 wherein said capping layer has a thickness ranging from 5 nm to 20 nm. 15. The method as set forth in claim 10 wherein said capping layer is deposited on said ferroelectric layer and said electrode is thereafter deposited on said capping layer.