초록 ▼

Thermal degradation of a low-k organic dielectric material is avoided or limited in the proximity of a heat source such as a fusible element by overlaying the low-k material with a thermally conductive material and providing a low thermal resistance path from the thermally conductive material, possi

Thermal degradation of a low-k organic dielectric material is avoided or limited in the proximity of a heat source such as a fusible element by overlaying the low-k material with a thermally conductive material and providing a low thermal resistance path from the thermally conductive material, possibly having a low modulus of elasticity, to a heat sink. The thermally conductive material thus provides crack-stop protection for further layers of an integrated circuit or interconnect structure above the fusible element by mechanical, chemical and thermal encapsulation of the heat source and low-k material.

대표청구항 ▼

1. An electronic device including: a fuse, a layer of dielectric material overlying said fuse, a layer of low-k dielectric material overlying said layer of dielectric material, and a layer of thermally conductive material embedded within said low k-dielectric material and interposed between sa

1. An electronic device including: a fuse, a layer of dielectric material overlying said fuse, a layer of low-k dielectric material overlying said layer of dielectric material, and a layer of thermally conductive material embedded within said low k-dielectric material and interposed between said dielectric material and said low-k dielectric material, and located over said fuse. 2. An electronic device as recited in claim 1, further including a layer of low-k dielectric material interposed between said dielectric layer and said layer of thermally conductive material. 3. An electronic device as recited in claim 1, further including means for removing heat from said layer of thermally conductive material. 4. An electronic device as recited in claim 1, further including: thermally conductive material extending generally parallel to said fuse, and adjacent said dielectric material and being embedded within said low-k dielectric material. 5. An electronic device as recited in claim 4, further including: a second thermally conductive material extending above said fuse to said layer of thermally conductive material, being embedded within said low-k dielectric material and extending parallel to said fuse. 6. An electronic device as recited in claim 4, further including: thermal connection material extending below said thermally conductive material, and extending parallel to said face. 7. An electronic device as recited in claim 6, wherein said thermal connection material extends to a heat sink. 8. An electronic device as recited in claim 7, wherein said heat sink includes a semiconductor substrate. 9. An electronic device as recited in claim 5, further including: thermal connection material extending below said thermally conductive material, and extending parallel to said fuse. 10. An electronic device as recited in claim 9, wherein said thermal connection material extends to a heat sink. 11. An electronic device as recited in claim 10, wherein said heat sink includes a semiconductor substrate. 12. An electronic device as recited in claim 1, wherein said layer of thermally conductive material is a patterned metal layer. 13. An electronic device as recited in claim 1, wherein said layer of thermally conductive material is formed by a damascene process. 14. An electronic device as recited in claim 5, wherein said layer of thermally conductive material and said second thermally conductive material are formed by a dual damascene process. 15. An electronic device as recited in claim 1, wherein said low-k dielectric material comprises SiLK. 16. An electronic device as recited in claim 1, wherein said layer of thermally conductive material forms a crack-stop structure.