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A computer enclosure includes a base (10), a hood (40), a pair of rails (80), and a pair of locking devices (60). The base includes a bottom plate (12) and a pair of side plates (14, 16). A pair of slideways (24) is defined in the side plates. The hood includes a top cover (42) and a bezel (44) perp

A computer enclosure includes a base (10), a hood (40), a pair of rails (80), and a pair of locking devices (60). The base includes a bottom plate (12) and a pair of side plates (14, 16). A pair of slideways (24) is defined in the side plates. The hood includes a top cover (42) and a bezel (44) perpendicular to the top cover. A pair of pivot rods (46) extends inwardly from opposite sides of the bezel. Each rail includes a sliding part (82) and a pivoting part (84). The sliding parts are slidably received in the slideways. Each pivoting part defines a pivoting hole (92) therein for receiving a corresponding pivot rod. The locking devices lock the hood to the base.

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A computer enclosure includes a base (10), a hood (40), a pair of rails (80), and a pair of locking devices (60). The base includes a bottom plate (12) and a pair of side plates (14, 16). A pair of slideways (24) is defined in the side plates. The hood includes a top cover (42) and a bezel (44) perp

A computer enclosure includes a base (10), a hood (40), a pair of rails (80), and a pair of locking devices (60). The base includes a bottom plate (12) and a pair of side plates (14, 16). A pair of slideways (24) is defined in the side plates. The hood includes a top cover (42) and a bezel (44) perpendicular to the top cover. A pair of pivot rods (46) extends inwardly from opposite sides of the bezel. Each rail includes a sliding part (82) and a pivoting part (84). The sliding parts are slidably received in the slideways. Each pivoting part defines a pivoting hole (92) therein for receiving a corresponding pivot rod. The locking devices lock the hood to the base. herein the electrically nonconductive material comprises a boro siloxane. 12. The method of claim 10, wherein the electrically nonconductive material comprises porous silox having a boron oxide component for providing increasing structural rigidity to the electrically nonconductive material as the electrically nonconductive material is thermally treated. 13. The method of claim 10, wherein the electrically nonconductive material comprises porous silox having no more than about ten weight percent of a boron oxide component for providing increasing structural rigidily to the electrically nonconductive material as the electrically nonconductive material is thermally treated. 14. The method of claim 10, wherein the electrically noncanductive material comprises porous silox having a boron oxide component for providing increasing structural rigidity to the electrically nonconductive material and including at least about twenty-five weight percent phenyl groups after the electrically nonconductive material is thermally treated. 15. The method of claim 10, wherein the electrically nonconductive material comprises a lanthanide siloxane. 16. The method of claim 10, wherein the electrically nonconductive material comprises porous silox having a lanthanide compound for providing increasing structural rigidity to the electrically nonconductive material as the electrically nonconductive material is thermally treated. 17. The method of claim 10, wherein the electrically nonconductive material comprises porous silox having no more than about ten weight percent of a lanthanide compound for providing increasing structural rigidity to the electrically nonconductive material as the electrically nonconductive material is thermally treated. 18. The method of claim 10, wherein the electrically nonconductive material comprises porous silox having a lanthanide compound for providing increasing structural rigidity to the electrically nonconductive material and including at least about twenty-five weight percent phenyl groups after the electrically nonconductive material is thermally treated. 19. The method of claim 10, wherein the thermal treatment of the electrically nonconductive material is accomplished at a temperature of at least about three hundred and fifty centigrade. 20. An integrated circuit formed by the method of claim 10.