초록 ▼

A method for making diamond material comprises providing a deposition chamber; placing a substrate in said deposition chamber; sealing and evacuating said deposition chamber; admitting to said deposition chamber gases suitable for diamond deposition; heating said substrate to a diamond deposition te

A method for making diamond material comprises providing a deposition chamber; placing a substrate in said deposition chamber; sealing and evacuating said deposition chamber; admitting to said deposition chamber gases suitable for diamond deposition; heating said substrate to a diamond deposition temperature; igniting and maintaining a plasma adjacent to a growth surface of said substrate such that said plasma extends no further than 1 mm from said growth surface of said substrate; and maintaining said plasma during a diamond deposition time period.

대표청구항 ▼

1. A method for making diamond material comprising: providing a deposition chamber having a powered electrode spaced apart from a counterelectrode; placing a substrate in electrical contact with said powered electrode; sealing and evacuating said deposition chamber; admitting to said depositio

1. A method for making diamond material comprising: providing a deposition chamber having a powered electrode spaced apart from a counterelectrode; placing a substrate in electrical contact with said powered electrode; sealing and evacuating said deposition chamber; admitting to said deposition chamber gases suitable for diamond deposition; heating said substrate to a diamond deposition temperature; applying RF energy at a frequency greater than 50 MHz and a power of at least 50 watts to said powered electrode to ignite a plasma between said powered electrode and said counterelectrode; increasing pressure of said gases in said deposition chamber to a diamond deposition pressure of greater than 20 Torr and increasing said power of said RF energy to maintain said plasma between said powered electrode and said counterelectrode to reach a diamond deposition power level; igniting and maintaining a plasma adjacent to a growth surface of said substrate such that said plasma extends no further than 1 mm from said growth surface of said substrate; and maintaining said diamond deposition temperature, said diamond deposition pressure and said diamond deposition power level during a diamond deposition time period. 2. The method of claim 1 wherein admitting to said deposition chamber gases suitable for diamond deposition comprises admitting hydrogen and methane. 3. The method of claim 2 wherein said hydrogen and methane are admitted at a ratio of 95 parts hydrogen to 5 parts methane by volume. 4. The method of claim 1 wherein heating said substrate to a diamond deposition temperature comprises heating said substrate to a temperature of over 700° C. 5. The method of claim 1 wherein said diamond deposition pressure is at least about 100 Torr. 6. The method of claim 1 wherein said diamond deposition pressure is at least about 150 Torr. 7. The method of claim 1 wherein said diamond deposition power level is at least about 200 watts. 8. The method of claim 1 wherein said diamond deposition power level is at least about 75 kW. 9. The method of claim 1 wherein said diamond deposition power level is about 200 watts, said frequency is about 400 MHz and said diamond deposition pressure is about 100 Torr. 10. The method of claim 1 wherein said diamond deposition power level is about 75 kW watts, said frequency is about 150 MHz and said diamond deposition pressure is about 150 Torr. 11. A high-efficiency diamond material produced by the process of claim 1. 12. A method for making diamond material comprising: providing a deposition chamber having a powered electrode spaced apart from a counterelectrode; placing a substrate in electrical contact with said powered electrode; sealing and evacuating said deposition chamber; admitting to said deposition chamber gases suitable for diamond deposition; heating said substrate to a diamond deposition temperature; applying RF energy at a frequency greater than 50 MHz and a power of at least 50 watts to said powered electrode to ignite a plasma between said powered electrode and said counterelectrode; igniting and maintaining a plasma adjacent to a growth surface of said substrate such that said plasma extends no further than 1 mm from said growth surface of said substrate; and maintaining said plasma during a diamond deposition time period. 13. The method of claim 12 wherein admitting to said deposition chamber gases suitable for diamond deposition comprises admitting hydrogen and methane. 14. The method of claim 13 wherein said hydrogen and methane are admitted at a ratio of 95 parts hydrogen to 5 parts methane by volume. 15. The method of claim 12 wherein heating said substrate to a diamond deposition temperature comprises heating said substrate to a temperature of over 700° C. 16. A high-efficiency diamond material produced by the process of claim 12.