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Multiple-plane FinFET CMOS 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-027/01
  • H01L-027/12
  • H01L-031/0392
  • H01L-029/04
  • H01L-031/036
출원번호 US-0011846 (2001-12-04)
발명자 / 주소
  • Fried, David M.
  • Nowak, Edward J.
출원인 / 주소
  • International Business Machines Corporation
대리인 / 주소
    Schmeiser, Olsen & Watts
인용정보 피인용 횟수 : 120  인용 특허 : 6

초록 ▼

The present invention provides FinFETs on the same substrate utilizing various crystal planes for FET current channels in order to optimize mobility and/or to reduce mobility. An embodiment of the present invention provides a substrate having a surface oriented on a first crystal plane that enables

대표청구항 ▼

The present invention provides FinFETs on the same substrate utilizing various crystal planes for FET current channels in order to optimize mobility and/or to reduce mobility. An embodiment of the present invention provides a substrate having a surface oriented on a first crystal plane that enables

이 특허에 인용된 특허 (6)

  1. Throngnumchai Kraisorn (Kanagawa JPX), CMOS device with perpendicular channel current directions.
    상세보기
  2. Buynoski Matthew S., Field effect transistor with higher mobility.
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    상세보기
  5. Aoki Masaaki (Minato JPX) Masuhara Toshiaki (Nishitama JPX) Warabisako Terunori (Nishitama JPX) Hanamura Shoji (Kokubunji JPX) Sakai Yoshio (Tsukui JPX) Isomae Seiichi (Sayama JPX) Meguro Satoshi (Ni, Recrystallized CMOS with different crystal planes.
    상세보기
  6. Kinugawa Masaaki (Tokyo JPX), Short channel CMOS on 110 crystal plane.
    상세보기

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