초록 ▼

A method and system are described for providing a direct current (DC) uninterruptible power supply with the method including, for example: continuously supplying fuel to a turbine; converting mechanical power from the turbine into alternating current (AC) electrical power; converting the AC electric

A method and system are described for providing a direct current (DC) uninterruptible power supply with the method including, for example: continuously supplying fuel to a turbine; converting mechanical power from the turbine into alternating current (AC) electrical power; converting the AC electrical power to DC power within a predetermined voltage level range; supplying the DC power to a load; and maintaining a DC load voltage within the predetermined voltage level range by adjusting the amount of fuel supplied to the turbine.

대표청구항 ▼

A method and system are described for providing a direct current (DC) uninterruptible power supply with the method including, for example: continuously supplying fuel to a turbine; converting mechanical power from the turbine into alternating current (AC) electrical power; converting the AC electric

A method and system are described for providing a direct current (DC) uninterruptible power supply with the method including, for example: continuously supplying fuel to a turbine; converting mechanical power from the turbine into alternating current (AC) electrical power; converting the AC electrical power to DC power within a predetermined voltage level range; supplying the DC power to a load; and maintaining a DC load voltage within the predetermined voltage level range by adjusting the amount of fuel supplied to the turbine. cond etchant being selective to said third insulating layer relative to said first and second insulating layers, wherein said third insulating layer is in direct contact with said second portion of said gate insulating layer and is separated from said substrate by said second portion of said gate insulating layer; and wherein said second insulating layer is silicon oxide and said third insulting layer is silicon nitride. 2. The partially fabricated contact well of claim 1 wherein said second etchant is phosphoric acid. 3. The semiconductor device of claim 1 wherein said doped region is a source/drain pocket. 4. The partially fabricated contact well of claim 3 wherein said second etchant is phosphoric acid. rming a second conductor core in the opening over the vertical portions of the second conformal barrier liner, the first conductor core, and the second stop layer, forming the second conductor core includes connecting the second conductor core to the first conductor core. 3. The method of manufacturing as claimed in claim 2 wherein forming the second stop layer forms a second stop layer having at least about twice the thickness of the first stop layer. 4. The method of manufacturing as claimed in claim 1 wherein treating the first conformal barrier liner uses a treatment selected from a group consisting of pre-cleaning, silicon-enrichment, wetting layer deposition, and a combination thereof. 5. The method of manufacturing as claimed in claim 1 wherein the first conductor core is a material selected from a group consisting of copper, aluminum, gold, silver, compounds thereof, and combinations thereof. 6. The method of manufacturing as claimed in claim 1 wherein forming the first dielectric layer deposits a low dielectric constant material.