초록 ▼

A gas flow regulating surface portion 37a is the farthest from the front surface of a wafer W in the middle between a peripheral portion of the wafer W and a center portion of a sealing vessel. The gas flow regulating portion 37a protrudes to the front surface of the wafer W in the vicinity of a cen

A gas flow regulating surface portion 37a is the farthest from the front surface of a wafer W in the middle between a peripheral portion of the wafer W and a center portion of a sealing vessel. The gas flow regulating portion 37a protrudes to the front surface of the wafer W in the vicinity of a center portion that surrounds an exhausting opening 35a. In other words, a convex portion 37c is formed in a peripheral area of the gas flow regulating surface portion 37a that surrounds the exhausting opening 35a. Since treatment gas flows along the front surface of the gas flow regulating portion 37a, treatment gas equally contacts the wafer W in the radius direction of the wafer W. Thus, a film with equal thickness is formed.

대표청구항 ▼

1. A gas treatment apparatus, comprising: a sealing vessel for holding a coated substrate; a heating means for heating the inside of said sealing vessel so as to gelatinize the coating of the substrate; a gas supplying path for supplying vapor of a solvent to said sealing vessel; an exhausting

1. A gas treatment apparatus, comprising: a sealing vessel for holding a coated substrate; a heating means for heating the inside of said sealing vessel so as to gelatinize the coating of the substrate; a gas supplying path for supplying vapor of a solvent to said sealing vessel; an exhausting path for exhausting gas out of said sealing vessel; a first reservoir tank for reserving a solution of the solvent, bubbling the solution with a carrier gas, and supplying the vapor of the solvent to said sealing vessel through said gas supplying path; a first temperature adjusting means for adjusting the temperature of the solution in said first reservoir tank to a predetermined temperature; a second reservoir tank for replenishing the solution to said first reservoir tank when the amount of the solution in the first reservoir tank decreases; and a second temperature adjusting means for adjusting the temperature of the solution in said second reservoir tank to a predetermined temperature. 2. The gas treatment apparatus as set forth in claim 1, further comprising: means for supplying alkali gas to said sealing vessel so as to accelerate the gelatinization of the coating of the substrate. 3. The gas treatment apparatus as set forth in claim 1, wherein the vapor of the solvent is ethylene glycol.