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A method of forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field wherein the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex w

A method of forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field wherein the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex wave having a two-step peak, or may be a complex wave obtained by complexing a pulsed wave with a stationary continuous wave.

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A method of forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field wherein the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex w

A method of forming a film by a plasma CVD process in which a high density plasma is generated in the presence of a magnetic field wherein the electric power for generating the plasma has a pulsed waveform. The electric power typically is supplied by microwave, and the pulsed wave may be a complex wave having a two-step peak, or may be a complex wave obtained by complexing a pulsed wave with a stationary continuous wave. surface of the alignment layer. 10. The method as recited in claim 8, wherein the first material includes Si and the step of introducing includes introducing carbon to adjust pretilt. 11. The method as recited in claim 8, wherein the first material includes one of silicon oxide and silicon nitride and the step of introducing includes introducing the other of nitrogen and oxygen as the second material to form silicon oxynitride. 12. The method as recited in claim 8, wherein the second material includes a material having Pi-electrons. 13. The method as recited in claim 8, wherein the steps of introducing and directing are performed concurrently. 14. The method as recited in claim 8, wherein the alignment layer provides tilted homeotropic alignment for liquid crystal.