초록 ▼

A light emitting device is provided. The light emitting device contains an array of organic light emitting diodes (OLEDs) emitting a plurality of colors, and a layer of scattering media above the light emitting surface of the OLED array. The emission color of the OLEDs may be tuned by applying diffe

A light emitting device is provided. The light emitting device contains an array of organic light emitting diodes (OLEDs) emitting a plurality of colors, and a layer of scattering media above the light emitting surface of the OLED array. The emission color of the OLEDs may be tuned by applying different power to different sets of OLEDs. The scattering media mixes the colors from each set of OLEDs, such that the device light output has a white color having a desired color temperature.

대표청구항 ▼

A light emitting device is provided. The light emitting device contains an array of organic light emitting diodes (OLEDs) emitting a plurality of colors, and a layer of scattering media above the light emitting surface of the OLED array. The emission color of the OLEDs may be tuned by applying diffe

A light emitting device is provided. The light emitting device contains an array of organic light emitting diodes (OLEDs) emitting a plurality of colors, and a layer of scattering media above the light emitting surface of the OLED array. The emission color of the OLEDs may be tuned by applying different power to different sets of OLEDs. The scattering media mixes the colors from each set of OLEDs, such that the device light output has a white color having a desired color temperature. 1. A method of manufacturing an electro-optical apparatus substrate, comprising the processes of: forming a light shield layer above one surface of an optically transparent substrate; patterning a light shield layer to thereby form a patterned light shield layer at least in a formation region of each transistor element to be formed; forming a first insulation layer above said one surface of said optically transparent substrate above which said patterned light shield layer has been formed; forming a second insulation layer having a polishing rate lower than that of said first insulation layer, on said first insulation layer; polishing a surface of said second insulation layer; laminating a single crystal silicon layer above said polished surface of said second insulation layer; and forming said each transistor element by using said single crystal silicon layer. 2. A method according to claim 1, wherein said first insulation layer is partially exposed by the step of polishing the surface of said second insulation layer. 3. A method according to claim 2, wherein a height of an exposed surface of said first insulation layer with respect to said one surface of said optically transparent substrate is same as that of said polished surface of said second insulation layer. 4. A method according to claim 1, wherein, at the step of patterning said light shield layer, said patterned light shield layer is formed only in the formation region of said each transistor element. 5. A method of manufacturing an electro-optical apparatus substrate, comprising the processes of: forming a light shield layer above one surface of an optically transparent substrate; patterning said light shield layer to thereby form a patterned light shield layer at least in a formation region of each transistor element to be formed; forming a first insulation layer above said one surface of said optically transparent substrate above which said patterned light shield layer has been formed; forming a second insulation layer having a polishing rate lower than that of said first insulation layer, on said first insulation layer; forming a third insulation layer having a polishing rate higher than that of said second insulation layer, on said second insulation layer; polishing a surface of said third insulation layer; laminating a single crystal silicon layer above said polished surface of said third insulation layer; and forming said each transistor element by using said single crystal silicon layer. 6. A method according to claim 5, wherein said second insulation layer is partially exposed by the step of polishing the surface of said third insulation layer. 7. A method according to claim 6, wherein a height of an exposed surface of said second insulation layer with respect to said one surface of said optically transparent substrate is same as that of said polished surface of said third insulation layer. 8. A method according to claim 5, wherein, at the step of patterning said light shield layer, said patterned light shield layer is formed in a non-formation region of said each transistor element where said each transistor element is not formed. 9. A method of manufacturing an electro-optical apparatus substrate, comprising the processes of: forming a light shield layer above one surface of an optically transparent substrate; patterning a light shield layer to thereby form a patterned light shield layer at least in a formation region of each transistor element to be formed; forming an insulation layer on said one surface of said optically transparent substrate on which said patterned light shield layer has been formed; polishing a surface of said insulation layer until a surface of said patterned light shield layer is exposed; laminating single crystal silicon layer above said polished surface of said insulation layer and said exposed surface of said patterned light shield layer; and forming said each transistor element by using said single c rystal silicon layer. 10. A method of manufacturing an electro-optical apparatus substrate, comprising the processes of: forming a light shield above one surface of an optically transparent substrate; patterning said light shield layer to thereby form a patterned light shield layer at least in a formation region of each transistor element to be formed; forming a first insulation layer on said one surface of said optically transparent substrate on which said patterned light shield layer has been formed; polishing a surface of said first insulation layer until a surface of said patterned light shield layer is exposed; forming a second insulation layer above said polished surface of said first insulation layer; laminating a single crystal silicon layer above said second insulation layer; and forming said each transistor element by using said single crystal silicon layer. 11. An electro-optical apparatus substrate comprising a patterned light shield layer having a pattern, an insulation film and a transistor, which are sequentially formed above one surface of an optically transparent substrate, said insulation film comprising (i) a first insulation layer and (ii) a second insulation layer, which is partially formed on said first insulation layer and whose polishing rate is lower than that of said first insulation layer, so that a surface of said insulation film is smoothed, said transistor element having a semiconductor layer comprising a single crystal silicon layer. 12. An electro-optical apparatus substrate according to claim 11, wherein said first insulation layer and said second insulation layer form a same smoothed surface. 13. An electro-optical apparatus substrate according to claim 11, wherein, said patterned light shield layer is formed only in an formation region of said transistor element. 14. An electro-optical apparatus substrate according to claim 11, wherein said first insulation layer comprises silicon oxide, and said second insulation layer comprises silicon nitride. 15. An electro-optical apparatus substrate comprising a patterned light shield layer having a pattern, an insulation film and a transistor, which are sequentially formed above one surface of an optically transparent substrate, said insulation film comprising (i) a first insulation layer, (ii) a second insulation layer, which is formed on said first insulation layer and whose polishing rate is lower than that of said first insulation layer, and (iii) a third insulation layer, which is partially formed on said second insulation layer and whose polishing rate is higher than that of said second insulation layer, so that a surface of said insulation film is smoothed, said transistor element having a semiconductor layer comprising a single crystal silicon layer. 16. An electro-optical apparatus substrate according to claim 15, wherein said second insulation layer and said third insulation layer form a same smoothed surface. 17. An electro-optical apparatus substrate according to claim 15, wherein, said patterned light shield layer is formed in a non-formation region of said each transistor element where said each transistor element is not formed. 18. An electro-optical apparatus substrate according to claim 15, wherein said first insulation layer and said third insulation layer comprise silicon oxide, and said second insulation layer comprises silicon nitride. 19. An electro-optical apparatus substrate comprising: patterned light shield layer having a surface and a pattern above one surface of an optically transparent substrate; an insulation layer which is formed above said one surface of said optically transparent substrate at an area where said patterned light shield layer is not formed, whose surface is smoothed side by side with said surface of said patterned light shield layer; a transistor element, which is formed above said patterned light shield layer and has a semiconductor layer comprising a single crystal silicon l