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Increased capacitance per unit of area with reduced series resistance and inductance is provided by a semiconductor-based capacitor with a spiral shape. The capacitor utilizes a plurality of patterned metal layers that each have a first trace with a spiral shape and a second trace with a spiral shap

Increased capacitance per unit of area with reduced series resistance and inductance is provided by a semiconductor-based capacitor with a spiral shape. The capacitor utilizes a plurality of patterned metal layers that each have a first trace with a spiral shape and a second trace with a spiral shape. The second trace is formed between the loops of the first trace, and around the first trace.

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Increased capacitance per unit of area with reduced series resistance and inductance is provided by a semiconductor-based capacitor with a spiral shape. The capacitor utilizes a plurality of patterned metal layers that each have a first trace with a spiral shape and a second trace with a spiral shap

Increased capacitance per unit of area with reduced series resistance and inductance is provided by a semiconductor-based capacitor with a spiral shape. The capacitor utilizes a plurality of patterned metal layers that each have a first trace with a spiral shape and a second trace with a spiral shape. The second trace is formed between the loops of the first trace, and around the first trace. 9991000, Kriesel et al.; US-5977520, 19991100, Madson, Jr. et al.; US-5986239, 19991100, Corrigan, III et al.; US-5989238, 19991100, Ginsburg; US-6039926, 20000300, Goldman, 219/492; US-6124572, 20000900, Spilger et al.; US-6174300, 20010100, Kriesel et al.; US-6175099, 20010100, Shei et al.; US-6259067, 20010700, Faries, Jr. et al.; US-6316750, 20011100, Levin, 604/291; US-6384380, 20020500, Faries, Jr. et al.