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Method for characterizing defects on semiconductor wafers 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G01B-011/00
출원번호 US-0953742 (2001-09-11)
발명자 / 주소
  • Worster, Bruce W.
  • Lee, Ken K.
출원인 / 주소
  • KLA-Tencor Corporation
대리인 / 주소
    Parsons Hsue & de Runtz LLP.
인용정보 피인용 횟수 : 17  인용 특허 : 106

초록

A method is described for characterizing defects on a test surface of a semiconductor wafer using a confocal-microscope-based automatic defect characterization (ADC) system. The surface to be tested and a reference surface are scanned using a confocal microscope to obtain three-dimensional images of

대표청구항

A method is described for characterizing defects on a test surface of a semiconductor wafer using a confocal-microscope-based automatic defect characterization (ADC) system. The surface to be tested and a reference surface are scanned using a confocal microscope to obtain three-dimensional images of

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  3. Lally, Kevin; Funk, Merritt; Sundararajan, Radha, Damage assessment of a wafer using optical metrology.
  4. Huet,Patrick; Shanbhag,Maruti; Bhagwat,Sandeep; Kowalski,Michal; Kini,Vivekanand; Randall,David; McCauley,Sharon; Huang,Tong; Zhang,Jianxin; Wu,Kenong; Gao,Lisheng; Tribble,Ariel; Kulkarni,Ashok; Cam, Flexible hybrid defect classification for semiconductor manufacturing.
  5. Lally, Kevin; Funk, Merritt; Sundararajan, Radha, Measuring a damaged structure formed on a wafer using optical metrology.
  6. Vodanovic, Bojko, Method and an apparatus for simultaneous 2D and 3D optical inspection and acquisition of optical inspection data of an object.
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