IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0184149
(2002-06-27)
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발명자
/ 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
53 인용 특허 :
8 |
초록
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A system provides the operator of a refrigeration package, such as a water-chilling package, with both short term and long term economic and quantitative analyses of the operating chiller, comparing the existing performance to the hypothetical design rated performance of other chillers, using actual
A system provides the operator of a refrigeration package, such as a water-chilling package, with both short term and long term economic and quantitative analyses of the operating chiller, comparing the existing performance to the hypothetical design rated performance of other chillers, using actual operating conditions and parameters. The system performs such analyses using either historical evaporator tonnage and actual power usage data, or works in real time to provide a "snapshot" economic forecast, based on the immediate conditions. During real time monitoring of various performance data, the system can also identify unsatisfactory performance conditions, i.e. faults, and provide the operator with onsite information as to the possible causes of, and potential solutions to, the unsatisfactory condition. The computer system and related hardware are provided, including that necessary to process and communicate the results of the analyses and monitoring to onsite displays, printers, data storage, and remote terminals and computers.
대표청구항
▼
A system provides the operator of a refrigeration package, such as a water-chilling package, with both short term and long term economic and quantitative analyses of the operating chiller, comparing the existing performance to the hypothetical design rated performance of other chillers, using actual
A system provides the operator of a refrigeration package, such as a water-chilling package, with both short term and long term economic and quantitative analyses of the operating chiller, comparing the existing performance to the hypothetical design rated performance of other chillers, using actual operating conditions and parameters. The system performs such analyses using either historical evaporator tonnage and actual power usage data, or works in real time to provide a "snapshot" economic forecast, based on the immediate conditions. During real time monitoring of various performance data, the system can also identify unsatisfactory performance conditions, i.e. faults, and provide the operator with onsite information as to the possible causes of, and potential solutions to, the unsatisfactory condition. The computer system and related hardware are provided, including that necessary to process and communicate the results of the analyses and monitoring to onsite displays, printers, data storage, and remote terminals and computers. pressure Pc1, and a valve element for introducing refrigerant having pressure Pc2 from the pressure-regulating chamber into a suction chamber under suction pressure Ps are configured to open and close in an interlocked fashion, and a displacement control valve is comprised of the valve elements and a solenoid section that applies to a solenoid force corresponding to a predetermined differential pressure to these valve elements. When control to the minimum operating displacement is carried out, the valve element is fully opened, and the valve element is fully closed, while control to the maximum operating displacement is carried out, the valve element is fully closed, and the valve element is fully opened, whereby transmission between operating capacities is performed in a reduced time period. esearch Triangle Institute, Resaerch Triangle Park, NC, USA, 18th International Conference on Thermoelectrics (1999), pp. 675-686. RTI Research Yields Major Advance in Thermoelectrics, Rama Venkatasubramanian et al., pp. 6-9. Cooling Film Tempers Tiny Jot Spots, Rama Venkatasubramanian et al., Science News, No. 3, 2001, v160, i18, p. 280. Phonon Blocking Electron Transmitting Superlattice Structures as Advenced Thin Film Thermoelectric Materials, Rama Venkatasubramanian, Research Traingle Institute, Research Triangle Park, N.C., Chapter 4, Semiconductors and Semimetals, vol. , pp. 175-201. Improved Photoluminescence of GaAs in ZnSe/GaAs Heterojuncations grown by Organomettalic Epitaxy, S. K. Ghandhi, et al., Electrical Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180, Appl. Phys. Lett., vol. 53 No. 14, Oct. 3, 1988, pp. 1308-1310. Epitaxy of Germanium using Germane in the Presence of Tetramethylgermanium, Rama Venkatasubramanian et al., Research Triangle Institute, P.O. BOX 12194, Reasearch Triangle Park, North Carolina 27709, J. Appl. Phys., vol. 66, No. 11, Dec. 1, 1989, pp. 5662-5664. Incorporation Processes in MBE Growth of ZnSe, Rama Venkatasubramanian et al., Journal of Crystal Growth 95 (1989) pp. 533-537. Radiative Recombination in Surface-free n+In-In+GaAs Homostructures, L. M. Smith and D. J. Wolford et al., Appl. Phys. Lett., vol. 57, No. 15, Oct. 8, 1990, pp. 1572-1574. Measurement of AlGaAs/AlGaAs Interface Recombination Velocites Using Time-Resolved Photoluminescence, M. L. Timmons, et al., Appl. Phys. Lett., vol. 56, No. 19, May 7, 1990, pp. 1850-1852. Development of Low-Bandgap Ge and Si0.07 Ge0.93 Solar Cells for Monolithic and Mechanically-Stacked Cascade Applications, Rama Venkatasubramanian et al., 1990 IEEE, pp. 73-78. Graded-Band-GAP AlGaAs Solar Cells for AlGaAs/Ge Cascade Cells, M. L. Timmons, et al., 1990 IEEE, pp. 68-72. Photoexcited Carrier Lifetimes and Spatial Transport in Surface-free GaAs Homostructures, L. M. Smith et al., J. Vac. Sci. Technol. B, vol. 8, No. 4 Jul./Aug. 1990, pp. 787-792. Ideal Electronic Properties of a p-Ge/p-Al0.85 Ga0.15 As Interface, Rama Venkatasubramanian et al., Appl. Phys. Lett., vol. 59, No. 3, Jul. 15, 1991, pp. 319-320. Selective Plasma Etching of Ge Substartes for Thin Freestanding GaAs-AlGaAs Heterostructures, Rama Vebkatasubramanian et al., Appl. Phys. Lett., vol. 59, No. 17, Oct. 21, 1991, pp. 2153-2155. Visible light Emission From Quantized Planar Ge Structures, Rama Venkatasubramanian et al., Appl. Phys. Lett., vol. 59, No. 13, Sep. 23, 1991, pp. 1604-1605. GaInAsP Lattice Matched to GaAs for Solar Cell Applications, P. R. Sharps, et al., Research Triangle Institute, P.o. Box 12194, RTP, NC 27709 1991 IEEE, pp. 315-317. High-Temperature Performance and Radiation Resistance of High-Efficiency Ge and Si0.07 Ge0.93 Solar Cells on Lightweight Ge Substrate, Rama Venkatasubramanian et al., pp. 85-98. An Inverted-Growth Approach to Development of an IR-Transparent, High-Effiency AlGaAs/GaAs Cascade Solar Cell, Rama Venkatasubramanian, M. L. Timmons, T. S. Colpitts, J. S. Hills, and J. A. Hutchby, Research Traingle Institute, Research Traingle Park, NC 27709, 1991 IEEE pp. 93-98. International Electron Devices Meeting, 1991, Physical Basis and Characteristics of LIght Emission Form Quantized Planar Ge Structures, Rama Venkatasubramanian, et al., 1991 IEEE pp. 15.4.1-15.4.4. High Quality GaAs on Si Using Si0.04 Ge0.96 /Ge Buffer Layers, Rama Venakatasubramanian et al., Journal of Crystal Growth 107 (1991) pp. 489-493. Optimization of the Heteroepitaxy of Ge on GaAs for Minority-Carrier Lifetime, Rama Venkatasubramanian, et al., Journal of Crystal Growth 112 (1991) pp. 7-13, Received Aug. 9, 1990; manuscript received in final form Dec. 14, 1990. Intrinsic Recombination and Interf ace Chatacterization in "Surface-free" GaAs Structures, D. J. Wolford et al., J. Vac. Sci. Technol. B, vol. 9, No. 4, Jul./Aug. 1991, pp. 2369-2376. Advances in the Development of an AlGaAs/GaAs Casacde Solar Cell Using a Patterned Germanium Tunnel Interconnect, Rama Venkatasubramanian et al., Solar Cells, 30 (1991) pp. 345-354. High-Quality Eutectic-Metal-Bonded AlGaAs-GaAs Thin Films on Si Substrates, Rama Venkatasubramanian et al., Appl. Phys. Lett., vol. 60, No. 7, Feb. 17, 1992, pp. 886-888. Photoluminescence of Porous Silicon Buried Underneath Epitaxial GaP, J. C. Campbell, et al., Appl. Phys. Lett., vol. 60, No. 7, Feb. 17, 1992, pp. 889-891. Interface-Free GaAs Structures -From Bulk to the Quantum Limit, D. J. Wolford, et al., Inst. Phys. Conf. Ser. No. 120: Chapter 9, pp. 401-406. Properties and Use of Cycled Grown OMVPE GaAs:Zn, GaAs:Se, and GaAs:Si Layers for High-Conductance GaAs Tunnel Junctions, Rama Venkatasubramanian et al., National Renewable Energy Laboratory, Golden, CO 80401, Journal of Electronic Materials, vol. 21, No. 9, 1992, pp. 893-899. 15.8%-Efficient (1-SUN, AM 1.5G) GaAs Solar Cell on Optical-Grade POlycrystalline Ge Substarte, Rama Venkatasubramanian et al., pp. 691-695. Development of 20% Efficient GaInAsP Solar Cells, P. R. Sharps, et al., pp. 633-638. Development of Highcy A10.2 Ga).8 As Solar Cells and Interconnect Schemes For Al0.2 Ga0.3 As/Si Mechanically-Stacked Cascade Cells, Rama Venkatasubramanian, et al., pp. 752-756. Photoreflectance Characterization of InP and GaAs Solar Cells, R. G. Rodrigues et al., pp. 681-685. Close-Packed Cell Arrays for Dish Concentrators, J. B. Lasich et al., Solar Research Corporation Pty. Ltd., 6 Luton Lane, Hawthorn, Victoria 3122, Australia and M. Timmons et al., Research Triangle Institute, RTP, USA, pp. 1938-1941. GaAs and Al0.2 Ga0.8 As Solar Cells with an Indirect-Bandgap Al0.8 Ga0.2 As Emitter -Heterojunction Cells, Rama Venkatasubramaian et al., Research Traingle Institute, RTP, NC 27709, H. Field and K. Emery, National Renewable Enerhy Laboratory (NREL), Golden Co 80401, First WCPEC; Dec. 5-9, 1994; Hawaii, pp. 1839-1842. The Growth and Radiation Response of N+p Deep Homojunction InP Solar Cells, M. J. Panuto et al., M. L. Timmons, et al., First WCPEC; Dec. 5-9, 1994; Hawaii, pp. 2192-2195. Material and Device Characterization Toward High-Efficiency GaAs Solar Cells on Optical-Grade Polycrystalline Ge Substrates, Rama Venkatasubramanian, et al, R. Ahrenkiel, et al., First WCPEC; Dec. 5-9, 1994; Hawaii, pp. 1692-1696. Silicon and GAAs/GE Concentrator Power Plants: A Comparison of Cost of Energy Produced, R. A. Whisnant et al., First WCPEC; Dec. 5-9, 1994; Hawaii, pp. 1103-1106. Compensation Mechanisms in N+-GaAs Doped with Silicon, Rama Venkatasubramanian, et al., Electrical Computer, and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, New York 12180, USA, Journal of Crystal Growth 94 (1989) pp. 34-40. High-Efficiency Tandem Solar Cells on Single-and Poly-Crystalline Substrates, J. A. Hutchby et al., Center for Semiconductor Research, Research Traingle Institute, Research Triangle Park, NC 27709, USA, Solar Energy Materials and Solar Cells 35 (1994) pp. 9-24. Optoelectronic Properties of Eutectic-Metal-Bonded (EMB) GaAs-AlGaAs Structures on Si Substrates, Rama Venkatasubramanian, et al., Solid-State Electronics vol. 37, No. 11, pp. 1809-1815, 1994. Heteroepitaxy and Charcterization of Ge-rich SiGe Alloys on GaAs, Rama Venkatasubramanian et al., C. T. Kao and N. R. Parikh, J. Appl. Phys., vol. 65, No. 9, May 1, 1989, pp. 8164-8167. 18.2% (AM1.5) Efficient GaAs Solar Cell on Optical-Grade Polycrystalline Ge Substrate, Rama Venkatasubramanian et al., National Renewable Energy Laboratory (NREL), Golden, CO 80401, 25thPNSC; May 13-17, 1996; Washington, D.C. pp. 31-36. Experimental Evidence of H igh Power Factors and Low Thermal Condutivity in Bi2Te3/ SB2Te3Superlattice Thin-Films, Rama Venkatasubramanian et al., Research Triangle Institute, Research Triangle Park, NC 27709, USA, 15thInternational Conference on Thermoelectrics (1996), pp. 454-458. Thermal Conductivity of Si-Ge Superlattices, S.-M. Lee and David G. Cahilla), Rama Venkatasubramanian, Appl. Phys. Lett. vol. 70, No. 22, Jun. 2, 1997, pp. 2957-2959. 20% (AM1.5) Efficiency GaAs Solar Cells on Sub-mm Grain-Size Poly-Ge and Its Transistion to Low-Cost Substrates, Rama Venkatasubramanian et al., 26thPVSC; Sep. 30-Oct. 3, 1997; Anaheim, CA, pp. 811-814. Electronic and Mechanical Properties of Ge Films Grown on Glass Substrates, R. K. Ahrenkiel et al., 26thPVSC; Sep. 30-Oct. 3, 1997; Anaheim, CA, pp. 527-529. MOCVD of Bi2Te3and Their Superlattice Structures for Thin-Film Thermoelectric Applications, Rama Venkatasubramanian et al., Journal of Crystal Growth 170 (1997), pp. 817-821. A Silent Cool: Thermoelectrics May Offer New Ways to Refrigerate and Generate Power, Corinna Wu, Science News, Sep. 6, 1997, v152 n10 p152(2), pp. 1-3. ONR Contributes to Thermoelectric Research (Office of Naval Research) (Brief Article), Ozone Depletion Network Online Today, Contact ONR, website http://www.onr.navy.mil. In-Plane Thermoelectric Properties of Freestanding Si/Ge Superlattice Structures, Rama Venkatasubramanian et al., 17thInternational Conference on Thermoelectronics (1998), pp. 191-197. Potential of Si-based Superlattice Thermoelectric Materials for Integration with Si Microelectronics, Rama Venkatasubramanian et al., 1998 IEEE, p. 869. Low-temperature Organometallic Epitaxy and Its Application to Superlattice Structures in Thermoelectrics, Rama Venkatasubramanian, a), et al., Sandra Liu and Nadia El-Masry, Michael Lamvik, Applied Physics Letters, vol. 75, No. 8, Aug. 23, 1999, pp. 1104-1106. Optical Constants of Bi2Te3and Sb2Te3Measured Using Spectroscopic Ellipsometry, HAO CUI,1I. B. Bhat,1,3and Rama Venkatasubramanian2,1,-Electrical, Computer and Systems Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180-3590, USA. 2.-Research Triangle Institute, Reasearch Traingle Park, NC 27709, USA, 3.-e-mail:bhati@.rpi.edu., Journal of Electronics Materials, vol. 28, No. 10, 1999, pp. 1111-1114. Thin-Film Technology, Research Triangle Institute, Investment Opportunities, in Thermoelectronics, website http://www.rti.org/units/es.cfm, pp. 1-2. Nature Publishing Group, Materials Update, Cool Future for Semiconductors, Oct. 11, 2001, pp. 1-3. Cool New Film, Science Update, Oct. 11, 2001, http://www.nature.com/nsu/011011/011011-12.html, pp. 1-2. Semiconductors are Cool, News and Views, Cronin B. Vining, 2001 Macmillan Magazines Ltd., Nature, vol. 413, Oct. 11, 2001, www.nature.com, pp. 577-578. Thermoelectric Boost, Richard Babyak, Appliance Manufacturer, Design and Engineering Solutions for the Global Appliance Industry, http://www.ammagazine.com/CDA/ArticleInformation/features/BNP Features Item/0,260 . . . Jul. 18, 2002, pp. 1-2. Thermoelectrics from Hot to Cool, New Technology Offers Efficient way to Heat or Cool ICS in Operation, Jeff Dorsch, Semiconductor Magazine, http://www.semi.org/web/wmagazine.nsf/4f55b97743c2d02e882565bf006c2459/27e74866ea . . ., Jun. 20, 2002, pp. 1-3. et. 32. The system of claim 30 wherein the means for controlling the means for comparing to repeat comparing for others of the summary conditions and individual policy conditions until at least one of one of the summary conditions is not met, all individual policy conditions for one of the levels are not met or at least one of the individual policy conditi
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