IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0074268
(2002-02-12)
|
발명자
/ 주소 |
- Ross, Harold F.
- Dorn, Daniel L.
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
4 인용 특허 :
29 |
초록
▼
An ice cream machine for cooling liquid ice cream into frozen ice cream includes an evaporator system with a secondary evaporator. The evaporator system can be a flooded evaporator or evaporator having an auxiliary tank or section of the evaporator that can ensure that a cooling chamber is surrounde
An ice cream machine for cooling liquid ice cream into frozen ice cream includes an evaporator system with a secondary evaporator. The evaporator system can be a flooded evaporator or evaporator having an auxiliary tank or section of the evaporator that can ensure that a cooling chamber is surrounded by liquid refrigerant during normal operation. The secondary evaporator ensures consistent temperature within the evaporator during periods of low sales, hold modes, or non-production modes.
대표청구항
▼
An ice cream machine for cooling liquid ice cream into frozen ice cream includes an evaporator system with a secondary evaporator. The evaporator system can be a flooded evaporator or evaporator having an auxiliary tank or section of the evaporator that can ensure that a cooling chamber is surrounde
An ice cream machine for cooling liquid ice cream into frozen ice cream includes an evaporator system with a secondary evaporator. The evaporator system can be a flooded evaporator or evaporator having an auxiliary tank or section of the evaporator that can ensure that a cooling chamber is surrounded by liquid refrigerant during normal operation. The secondary evaporator ensures consistent temperature within the evaporator during periods of low sales, hold modes, or non-production modes. katasubramanian et al., Research Triangle Institute, P.O. BOX 12194, Reasearch Triangle Park, North Carolina 27709, J. Appl. Phys., vol. 66, No. 11, Dec. 1, 1989, pp. 5662-5664. Incorporation Processes in MBE Growth of ZnSe, Rama Venkatasubramanian et al., Journal of Crystal Growth 95 (1989) pp. 533-537. Radiative Recombination in Surface-free n+In-In+GaAs Homostructures, L. M. Smith and D. J. Wolford et al., Appl. Phys. Lett., vol. 57, No. 15, Oct. 8, 1990, pp. 1572-1574. Measurement of AlGaAs/AlGaAs Interface Recombination Velocites Using Time-Resolved Photoluminescence, M. L. Timmons, et al., Appl. Phys. Lett., vol. 56, No. 19, May 7, 1990, pp. 1850-1852. Development of Low-Bandgap Ge and Si0.07 Ge0.93 Solar Cells for Monolithic and Mechanically-Stacked Cascade Applications, Rama Venkatasubramanian et al., 1990 IEEE, pp. 73-78. Graded-Band-GAP AlGaAs Solar Cells for AlGaAs/Ge Cascade Cells, M. L. Timmons, et al., 1990 IEEE, pp. 68-72. Photoexcited Carrier Lifetimes and Spatial Transport in Surface-free GaAs Homostructures, L. M. Smith et al., J. Vac. Sci. Technol. B, vol. 8, No. 4 Jul./Aug. 1990, pp. 787-792. Ideal Electronic Properties of a p-Ge/p-Al0.85 Ga0.15 As Interface, Rama Venkatasubramanian et al., Appl. Phys. Lett., vol. 59, No. 3, Jul. 15, 1991, pp. 319-320. Selective Plasma Etching of Ge Substartes for Thin Freestanding GaAs-AlGaAs Heterostructures, Rama Vebkatasubramanian et al., Appl. Phys. Lett., vol. 59, No. 17, Oct. 21, 1991, pp. 2153-2155. Visible light Emission From Quantized Planar Ge Structures, Rama Venkatasubramanian et al., Appl. Phys. Lett., vol. 59, No. 13, Sep. 23, 1991, pp. 1604-1605. GaInAsP Lattice Matched to GaAs for Solar Cell Applications, P. R. Sharps, et al., Research Triangle Institute, P.o. Box 12194, RTP, NC 27709 1991 IEEE, pp. 315-317. High-Temperature Performance and Radiation Resistance of High-Efficiency Ge and Si0.07 Ge0.93 Solar Cells on Lightweight Ge Substrate, Rama Venkatasubramanian et al., pp. 85-98. An Inverted-Growth Approach to Development of an IR-Transparent, High-Effiency AlGaAs/GaAs Cascade Solar Cell, Rama Venkatasubramanian, M. L. Timmons, T. S. Colpitts, J. S. Hills, and J. A. Hutchby, Research Traingle Institute, Research Traingle Park, NC 27709, 1991 IEEE pp. 93-98. International Electron Devices Meeting, 1991, Physical Basis and Characteristics of LIght Emission Form Quantized Planar Ge Structures, Rama Venkatasubramanian, et al., 1991 IEEE pp. 15.4.1-15.4.4. High Quality GaAs on Si Using Si0.04 Ge0.96 /Ge Buffer Layers, Rama Venakatasubramanian et al., Journal of Crystal Growth 107 (1991) pp. 489-493. Optimization of the Heteroepitaxy of Ge on GaAs for Minority-Carrier Lifetime, Rama Venkatasubramanian, et al., Journal of Crystal Growth 112 (1991) pp. 7-13, Received Aug. 9, 1990; manuscript received in final form Dec. 14, 1990. Intrinsic Recombination and Interface Chatacterization in "Surface-free" GaAs Structures, D. J. Wolford et al., J. Vac. Sci. Technol. B, vol. 9, No. 4, Jul./Aug. 1991, pp. 2369-2376. Advances in the Development of an AlGaAs/GaAs Casacde Solar Cell Using a Patterned Germanium Tunnel Interconnect, Rama Venkatasubramanian et al., Solar Cells, 30 (1991) pp. 345-354. High-Quality Eutectic-Metal-Bonded AlGaAs-GaAs Thin Films on Si Substrates, Rama Venkatasubramanian et al., Appl. Phys. Lett., vol. 60, No. 7, Feb. 17, 1992, pp. 886-888. Photoluminescence of Porous Silicon Buried Underneath Epitaxial GaP, J. C. Campbell, et al., Appl. Phys. Lett., vol. 60, No. 7, Feb. 17, 1992, pp. 889-891. Interface-Free GaAs Structures -From Bulk to the Quantum Limit, D. J. Wolford, et al., Inst. Phys. Conf. Ser. No. 120: Chapter 9, pp. 401-406. Properties and Use of Cycled Grown OMVPE GaAs:Zn, GaAs:Se, and GaAs:Si Layers for High-Conductance GaAs Tunnel Junctions, Rama Venkatasubramanian et al., National Renewable Energ
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