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Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0911507 (2001-07-25) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 7 인용 특허 : 434 |
High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to monitor the growth rate of the growing film. The monocrystalline oxide layer (24) may be used to form a compliant substrat
High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to monitor the growth rate of the growing film. The monocrystalline oxide layer (24) may be used to form a compliant substrate for monocrystalline growth of additional layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22) spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24).
High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to monitor the growth rate of the growing film. The monocrystalline oxide layer (24) may be used to form a compliant substrat
High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to monitor the growth rate of the growing film. The monocrystalline oxide layer (24) may be used to form a compliant substrate for monocrystalline growth of additional layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22) spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24). erization of the Clevage Sites Generating the Cross-Linked N-Telopeptide Neopitope", Bone, vol. 26, No. 3, pp. 241-247, Mar. 2000. Brame, et al: Identification of Extremely Reactive γ-Ketoaldehydes (Isolevuglandins) as Products of the Isoprostane Pathway and Characterization of Their Lysyl Protein Adducts, The Journal of Biological Chemistry, vol. 274, No. 19, pp. 13139-13146, May 7, 1999. Hanson, et al: "Molecular Site Specificity of Pyridinoline and Pyrrole Cross-links in Type I Collagen of Human Bone", The Journal of Biological Chemistry, vol. 271, No. 43, pp. 26508-26516, Oct. 25, 1996. Hughes, et al: "A Collagen-associated Ehrlich Chromagen: a Pyrrolic Cross-link?", Bioscience Reports (UK), vol. 1, pp. 611-618, (1981). Kemp, et al: "Ehrlich Chromogens, Probable Cross-links in Elastin and Collagen", Biochemical Journal (UK), vol. 252, pp. 387-393 (1988). Kuypers, et al: "Identification of the Loci of the Collagen-associated Ehrlich Chromogen in Type I Collagen Confirms its Role as a Trivalent Cross-link", Biochemical Journal (UK), vol. 283, pp. 129-136 (1992). Lombard, et al: "Comparison of Three Reagents for Detecting Indole Production by Anaerobic Bacteria in Microstest Systems", Journal of Clinical Microbiology, vol. 18, No. 3, pp. 609-613, Sep. 1983. McBrayer, et al: "Diffusion of Metals in Silicon Dioxide", Journal of Electrochemical Soceity, vol. 133, No. 6, pp. 1242-1246, Jun. 1986. Raghavan, et al: "Diffusion of Copper Through Dielectric Films Under Bias Temperature Stress", Thin Solid Films, Vol 262, pp. 168-176 (1995). Rajkumar, et al: "Generation of Pyrroles in the Reaction of Levuglandin E2with Proteins", Journal of Organic Chemistry, vol. 59, pp. 6038-6043, (1994). Ramanakoppa H. Nagaraj, et al: "Protein Modification by the Degradation Products of Ascorbate: Formation of a Novel Pyrrole from the Maillard Reaction of L-threose with Proteins", Biochimica et Biophysica Acta, vol. 1253, pp. 75-84 (1995). Salomon, et al: "Protein Adducts of Iso[4]levuglanding E2a Product of the Isoprostane Pathway, in Oxidized Low Density Lippoprotein", The Journal of Biological Chemistry, vol. 274, No. 29, pp. 20271-20280, Jul. 16, 1999.
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