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A cooling assembly for dissipating heat produced in a heat generating component of an electronic system includes a shroud assembly. The cooling assembly also includes a heat dissipating device removably housed within the shroud assembly and a fan assembly removably housed within the shroud assembly.

A cooling assembly for dissipating heat produced in a heat generating component of an electronic system includes a shroud assembly. The cooling assembly also includes a heat dissipating device removably housed within the shroud assembly and a fan assembly removably housed within the shroud assembly. The shroud assembly further includes a plurality of mounting assemblies slidably attached to the shroud assembly and configured to removably secure the cooling assembly in thermal connection to the heat generating component.

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A cooling assembly for dissipating heat produced in a heat generating component of an electronic system includes a shroud assembly. The cooling assembly also includes a heat dissipating device removably housed within the shroud assembly and a fan assembly removably housed within the shroud assembly.

A cooling assembly for dissipating heat produced in a heat generating component of an electronic system includes a shroud assembly. The cooling assembly also includes a heat dissipating device removably housed within the shroud assembly and a fan assembly removably housed within the shroud assembly. The shroud assembly further includes a plurality of mounting assemblies slidably attached to the shroud assembly and configured to removably secure the cooling assembly in thermal connection to the heat generating component. a switching device switching between connecting said gate electrode to said power supply and disconnecting said gate electrode from said power supply; (d) applying a voltage to an inspection target; (e) coupling said gate electrode through an air-gap to said inspection target; (f) connecting said gate electrode to said power supply; (g) disconnecting said gate electrode from said power supply after said (f); and (h) outputting said voltage applied to said inspection target from a source electrode of said field effect transistor while said (g) is performed. 10. A potential sensing method,according to claim 9, wherein said (f), (g) and (h) are performed repeatedly. 11. A potential sensing method according to claim 9, wherein when each of said (f) and (g) is performed, said field effect transistor is active. 12. A potential sensing method according to claim 9, wherein when said (f) is performed, a charge from said power supply is charged in an oxide film under said gate electrode. 13. A potential sensing method according to claim 12, wherein said when said (g) is performed, said field effect transistor is in action with said charge included in said oxide film. 14. A potential sensing method according to claim 9, wherein said (e) includes setting said air-gap to have an interval of approximately 20 μm. 15. A potential sensing method according to claim 9, wherein when said (f) is performed, said voltage applied to said inspection target is applied to said switching device not to be outputted from said source electrode. 16. A potential sensing method according to claim 9, wherein when said (g) is performed, said voltage applied to said inspection target is not applied to said switching device. 17. A potential sensing method according to claim 9, wherein said inspection target is a pixel electrode of a liquid crystal panel. 18. A potential sensing method according to claim 9, wherein said field effect transistor is an enhancement type MOS-FET. 19. A potential sensing method according to claim 9, wherein said (h) is performed in a condition that said gate electrode is not in physical contact with said inspection target. 20. A potential sensor, comprising: a field effect transistor; a power supply configured to supply a direct current voltage to a gate electrode of said field effect transistor; and a switch configured to connect and disconnect said gate electrode to and from said power supply, wherein when said gate electrode is disconnected from said power supply, said field effect transistor is active, and wherein a signal corresponding to a voltage of an inspection target is outputted from said gate electrode of said field effect transistor. 21. A potential sensor, comprising: a field effect transistor; a power supply configured to supply a direct current voltage to a gate electrode of said field effect transistor; a switch configured to connect and disconnect said gate electrode to and from said power supply; and a target device configured to be monitored, wherein current flows between a drain and a source of said field effect transistor when said gate electrode is connected to said power supply and when said gate electrode is disconnected from said power supply, and wherein said potential sensor is connected to said target device through an air gap when said potential sensor is in use. 22. A potential sensor, comprising: a field effect transistor; a power supply configured to supply a direct current voltage to a gate electrode of said field effect transistor; and a switch configured to connect and disconnect said gate electrode to and from said power supply, and wherein when said gate electrode is disconnected from said power supply, current flows between a drain and a source of said field effect transistor. 23. The potential sensor according to claim 22, wherein when said gate electrode is disconnected from said power supply, said voltage applied to said target device is outputted in a source el