IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0851843
(2001-05-09)
|
발명자
/ 주소 |
- Bae, Joong-Myeon
- Carter, John David
- Krumpelt, Michael
- Ahmed, Shabbir
|
출원인 / 주소 |
- The University of Chicago
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
2 인용 특허 :
5 |
초록
▼
A monolithic catalyst with micro-scale flow channels and methods of making such a monolithic catalyst are provided. The monolithic catalyst includes a plurality of thin catalyst walls. The walls have a set thickness in a range from 1 to 150 μm. The thin catalyst walls define a plurality of flow chan
A monolithic catalyst with micro-scale flow channels and methods of making such a monolithic catalyst are provided. The monolithic catalyst includes a plurality of thin catalyst walls. The walls have a set thickness in a range from 1 to 150 μm. The thin catalyst walls define a plurality of flow channels. A fugitive material is used to form the flow channels. The flow channels have a set width in a range from 1 to 200 μm. The flow channels are formed by an organic fugitive material, which burns off during processing. By using the thin catalyst walls and flow channels having a set width in a range from 1 to 200 μm, a reduced diffusion path length that molecules travel between the bulk gas and the active site is provided. Accelerating the mass transport thus improves the overall reaction rate, which allows processing of more reactants. Thus, the volume of the required catalyst is reduced, allowing more compact reactors. Fabrication methods involve simple, low-cost and scaleable procedures, allowing the flow channel and catalyst dimensions to be easily scaled to a requisite size for a given application. One fabrication method involves tape casting successive layers of fugitive and catalyst materials, and then firing to remove the organic binders and partially sinter the catalyst particles. The slurries can also be cast into thin layers using various processes, including screen printing, wet spraying and spin casting. Another fabrication method for fabricating a supported catalyst involves dipping a pre-shaped metal foil into a slurry containing an active catalyst powder, allowing the catalyst slurry to coat the foil evenly and allowing the catalyst slurry coated foil to dry. The catalyst slurry coated foil is dipped into a solution to form a fugitive coating layer, next the coated metal foil is cut into strips and formed into a selected shape.
대표청구항
▼
A monolithic catalyst with micro-scale flow channels and methods of making such a monolithic catalyst are provided. The monolithic catalyst includes a plurality of thin catalyst walls. The walls have a set thickness in a range from 1 to 150 μm. The thin catalyst walls define a plurality of flow chan
A monolithic catalyst with micro-scale flow channels and methods of making such a monolithic catalyst are provided. The monolithic catalyst includes a plurality of thin catalyst walls. The walls have a set thickness in a range from 1 to 150 μm. The thin catalyst walls define a plurality of flow channels. A fugitive material is used to form the flow channels. The flow channels have a set width in a range from 1 to 200 μm. The flow channels are formed by an organic fugitive material, which burns off during processing. By using the thin catalyst walls and flow channels having a set width in a range from 1 to 200 μm, a reduced diffusion path length that molecules travel between the bulk gas and the active site is provided. Accelerating the mass transport thus improves the overall reaction rate, which allows processing of more reactants. Thus, the volume of the required catalyst is reduced, allowing more compact reactors. Fabrication methods involve simple, low-cost and scaleable procedures, allowing the flow channel and catalyst dimensions to be easily scaled to a requisite size for a given application. One fabrication method involves tape casting successive layers of fugitive and catalyst materials, and then firing to remove the organic binders and partially sinter the catalyst particles. The slurries can also be cast into thin layers using various processes, including screen printing, wet spraying and spin casting. Another fabrication method for fabricating a supported catalyst involves dipping a pre-shaped metal foil into a slurry containing an active catalyst powder, allowing the catalyst slurry to coat the foil evenly and allowing the catalyst slurry coated foil to dry. The catalyst slurry coated foil is dipped into a solution to form a fugitive coating layer, next the coated metal foil is cut into strips and formed into a selected shape. apers, pp. 150-151, Feb. 2001. M. Mizuno et al., "Clock Distribution Networks with On-Chip Transmission Lines," Proceedings of the 2000 International Interconnect Technology Conference, pp. 3-5, 2000. M. Mizuno et al., "On-chip multi-GHz Clocking with Transmission Lines," ISSCC Digest of Technical Papers, pp. 366-367, Feb. 2000. Y. Ismail, E. Friedman and J. Neves, "Performance Criteria for Evaluating the Importance On-chip Inductance," Proceedings of the IEEE International Symposium on Circuits and Systems, pp. 244-247, May 1998. P. Restle, et al., "A Clock Distribution Network for Microprocessors," IEEE J. Solid-State Circuits, vol. 36, No. 5, pp. 792-799. May 2001. T. Xanthopoulos, et al., "The Design and Analysis of the Clock Distribution Network for a 1.2GHz Alpha Microprocessor," ISSCC Digest of Technical Papers, pp. 402-403, Feb. 2001. N. Kurd, et al., "Multi-GHz Clocking Scheme for Intel Pentium4 Microprocessor," ISSCC Digest of Technical Papers, pp. 404-405, Feb. 2001. K. Bernstein, et al., "High Speed CMOS Design Styles", Kluwer Academic Publishers, pp. 247-284, 1998. P. Zarkesh-Ha and J. Mindl, "Asymptotically Zero power Dissipation Gigahertz Clock Distribution Network," IEEE 8thTopical Conference on Electrical Performance of Electronic Packaging, pp. 57-60, Oct. 1999.'1. A. Chandrakasan, W. Bowhill and F. Fox, ed., "Design of High Performance Microprocessor Circuits," IEEE Press: Ch. 6, Models of Process Variations in Device and Interconnect, pp. 98-115; Ch. 13, Clock Distribution, pp. 261-281; and Ch. 17, Techniques for Driving Interconnect, pp. 352-377 (2001).
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