A granular composition, especially for incorporation in washing powder formulations, comprises at least 40% by weight of an amorphous silica and typically at least 30% by weight of a functional ingredient such as a perfume, the amorphous silica having a surface area of at least 550 m2/g, a pore volu
A granular composition, especially for incorporation in washing powder formulations, comprises at least 40% by weight of an amorphous silica and typically at least 30% by weight of a functional ingredient such as a perfume, the amorphous silica having a surface area of at least 550 m2/g, a pore volume from about 1.0 to about 2.5 ml/g and a particle size of no more than 50 microns, the granules of said composition having a particle size from about 200 to about 2000 microns.
대표청구항▼
A granular composition, especially for incorporation in washing powder formulations, comprises at least 40% by weight of an amorphous silica and typically at least 30% by weight of a functional ingredient such as a perfume, the amorphous silica having a surface area of at least 550 m2/g, a pore volu
A granular composition, especially for incorporation in washing powder formulations, comprises at least 40% by weight of an amorphous silica and typically at least 30% by weight of a functional ingredient such as a perfume, the amorphous silica having a surface area of at least 550 m2/g, a pore volume from about 1.0 to about 2.5 ml/g and a particle size of no more than 50 microns, the granules of said composition having a particle size from about 200 to about 2000 microns. direction of said potential flowed through said substrate. 6. A semiconductor device manufacturing apparatus that uses a thermal CVD fraction to deposit a film onto a substrate, said apparatus having a vaporizer for vaporizing a raw material to form a vapor phase deposition material, and a power supply for supplying a d.c. electrical potential to said substrate or said film deposited thereupon for attracting said vapor phase material, wherein power supply is further provided with an electrode terminal units mover which changes a respective position of said electrode terminal unit with respect to a main surface of said substrate or said film deposited thereupon. 7. A semiconductor device manufacturing apparatus according to claim 1, wherein said electrode terminal units mover controls to set said electrode terminal units either at a first position at which said electrode terminal units are contacted to said substrate or said film deposited thereupon or at a second position at which said electrode terminal units are not contacted thereto. 8. A semiconductor device manufacturing apparatus according to claim 6, wherein said electrode terminal units mover is provided with a support on which said electrode terminal units are supported. 9. A semiconductor device manufacturing apparatus that uses a thermal CVD reaction to deposit a film onto a substrate, said apparatus having a vaporizer for vaporizing a raw material to form a vapor phase deposition material, and a power supply for supplying a d.c. electrical potential to said substrate or said film deposited thereupon for attracting said vapor phase material, wherein said power supply supplies said d.c. electrical potential to said substrate or said film deposited thereupon, either directly or indirectly, and said power supply comprises a power supply source and a non-contact eletrical potential supply which is connected to said power supply source and supplying said d.c. electrical potential to said substrate or said film deposited thereupon, without making said potential supply to be directly connected thereto, wherein said non-contact electrical potential supply comprises a coil. 10. A semiconductor device manufacturing method comprising: a step of forming a trench on a semiconductor substrate, a step of depositing a barrier layer for the purpose of preventing film diffusion within said trench, a step of depositing a film onto said barrier layer by using a thermal CVD reaction, a step of depositing a film by using a thermal CVD reaction while applying a d.c. electrical potential to either one of said substrate and said deposited film for orienting the crystal of aid vapor phase material in the direction of the electrical field induced by said d.c. electrical potential, and a step of polishing said film and said barrier layer, so as to leave said film and barrier layer within said trench, so as to form a wire.
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이 특허에 인용된 특허 (5)
Guarracino Mario,ITX ; Gagliardini Alessandro,ITX, Absorbent articles having an odor control system consisting of absorbent gelling material and silica.
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