Silicon germanium heterojunction bipolar transistor with carbon incorporation
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-031/072
출원번호
US-0683498
(2002-01-09)
발명자
/ 주소
Lanzerotti, Louis D.
Ronan, Brian P.
Voldman, Steven H.
출원인 / 주소
International Business Machines Corporation
대리인 / 주소
McGinn & Gibb, PLLC
인용정보
피인용 횟수 :
20인용 특허 :
19
초록▼
A silicon germanium heterojunction bipolar transistor device having a semiconductor region, and a diffusion region in the semiconductor region, wherein the diffusion region is boron-doped, wherein the semiconductor region comprises a carbon dopant therein to minimize boron diffusion, and wherein a c
A silicon germanium heterojunction bipolar transistor device having a semiconductor region, and a diffusion region in the semiconductor region, wherein the diffusion region is boron-doped, wherein the semiconductor region comprises a carbon dopant therein to minimize boron diffusion, and wherein a combination of an amount of the dopant, an amount of the boron, and a size of the semiconductor region are such that the diffusion region has a sheet resistance of less than approximately 4 Kohms/cm2. Also, the diffusion region is boron-doped at a concentration of 1×1020/cm3to 1×1021/cm3. Additionally, the semiconductor region comprises 5-25% germanium and 0-3% carbon. By adding carbon to the semiconductor region, the device achieves an electrostatic discharge robustness, which further causes a tighter distribution of a power-to-failure of the device, and increases a critical thickness and reduces the thermal strain of the semiconductor region.
대표청구항▼
A silicon germanium heterojunction bipolar transistor device having a semiconductor region, and a diffusion region in the semiconductor region, wherein the diffusion region is boron-doped, wherein the semiconductor region comprises a carbon dopant therein to minimize boron diffusion, and wherein a c
A silicon germanium heterojunction bipolar transistor device having a semiconductor region, and a diffusion region in the semiconductor region, wherein the diffusion region is boron-doped, wherein the semiconductor region comprises a carbon dopant therein to minimize boron diffusion, and wherein a combination of an amount of the dopant, an amount of the boron, and a size of the semiconductor region are such that the diffusion region has a sheet resistance of less than approximately 4 Kohms/cm2. Also, the diffusion region is boron-doped at a concentration of 1×1020/cm3to 1×1021/cm3. Additionally, the semiconductor region comprises 5-25% germanium and 0-3% carbon. By adding carbon to the semiconductor region, the device achieves an electrostatic discharge robustness, which further causes a tighter distribution of a power-to-failure of the device, and increases a critical thickness and reduces the thermal strain of the semiconductor region. n region. 16. A bipolar transistor comprising: a collector; an emitter; a base region separating said collector from said emitter, wherein said base region includes carbon; and a dopant in said base region; wherein said carbon limits outdiffusion of said dopant and said dopant is included in sufficient quantities to reduce a resistance of said base region to less than approximately 4Kohms/cm2, wherein said carbon maintains said dopant within a central portion of said base region, and wherein said dopant is included in a peak concentration of approximately 1×1020cm3to 1×1021cm3. 17. The transistor in claim 16, wherein said dopant comprises one of boron, aluminum, gallium, indium, and titanium. 18. The transistor in claim 16, wherein said base region further comprises silicon germanium, and wherein said base region comprises a semiconductor layer over said collector and said shallow trench isolation region. 19. The transistor in claim 16, further comprising a wafer, wherein a first portion of said wafer includes said collector and a second portion of said wafer includes a shallow trench isolation region. 20. The transistor in claim 18, wherein said base region comprises a single crystal silicon germanium carbon material above said collector and a poly crystal silicon germanium carbon material above said shallow trench isolation region.
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