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Silicon germanium heterojunction bipolar transistor with carbon incorporation

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-031/072
출원번호 US-0683498 (2002-01-09)
발명자 / 주소
  • Lanzerotti, Louis D.
  • Ronan, Brian P.
  • Voldman, Steven H.
출원인 / 주소
  • International Business Machines Corporation
대리인 / 주소
    McGinn & Gibb, PLLC
인용정보 피인용 횟수 : 20  인용 특허 : 19

초록

A silicon germanium heterojunction bipolar transistor device having a semiconductor region, and a diffusion region in the semiconductor region, wherein the diffusion region is boron-doped, wherein the semiconductor region comprises a carbon dopant therein to minimize boron diffusion, and wherein a c

대표청구항

A silicon germanium heterojunction bipolar transistor device having a semiconductor region, and a diffusion region in the semiconductor region, wherein the diffusion region is boron-doped, wherein the semiconductor region comprises a carbon dopant therein to minimize boron diffusion, and wherein a c

이 특허에 인용된 특허 (19)

  1. Coolbaugh, Douglas D.; Schonenberg, Kathryn T., C implants for improved SiGe bipolar yield.
  2. Candelaria Jon J. (Tempe AZ), Carbon doped silicon semiconductor device having a narrowed bandgap characteristic and method.
  3. Metzger Robert A. (Thousand Oaks CA) Hafizi Madjid (Santa Monica CA) Stanchina William E. (Thousand Oaks CA) Rensch David B. (Thousand Oaks CA), Electrical junction device with lightly doped buffer region to precisely locate a p-n junction.
  4. Plumton Donald Lynn ; Kim Tae Seung, Epitaxial overgrowth method and devices.
  5. Hashimoto Takasuke (Tokyo JPX), Hetero-junction type bipolar transistor.
  6. Frei, Michel Ranjit; King, Clifford Alan; Ma, Yi; Mastrapasqua, Marco; Ng, Kwok K, Heterojunction bipolar transistor.
  7. Enquist Paul, Heterojunction bipolar transistor and method of manufacturing.
  8. Ohkubo Michio,JPX, Heterojunction bipolar transistor having a graded-composition base region.
  9. Shimawaki, Hidenori, Heterojunction bipolar transistor having base structure for improving both cut-off frequency and maximum oscillation frequency.
  10. Bayraktaroglu Burhan (Plano TX), Method of making multilayer base heterojunction device having one of base layer as a diffusion barrier between base-emit.
  11. Kizuki Hirotaka,JPX, Method of manufacturing a carbon-doped compound semiconductor layer.
  12. Bayraktaroglu Burhan (Plano TX), P-N junction diffusion barrier employing mixed dopants.
  13. Eaglesham David James ; Gossmann Hans-Joachim Ludwig ; Poate John Milo ; Stolk Peter Adriaan, Process for controlling dopant diffusion in a semiconductor layer.
  14. Eaglesham David James ; Gossmann Hans-Joachim Ludwig ; Poate John Milo ; Stolk Peter Adriaan, Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby.
  15. Daly James T. (Mansfield MA), Process of making strain-free, carbon-doped epitaxial layers and products so made.
  16. Kondo Makoto,JPX ; Anayama Chikashi,JPX ; Shoji Hajime,JPX, Semiconductor device and its manufacture utilizing crystal orientation dependence of impurity concentration.
  17. Furukawa Seijiro (Kawasaki JPX) Etoh Hiroyuki (Kokubunji JPX) Ishizaka Akitoshi (Kokubunji JPX) Shimada Toshikazu (Kokubunji JPX), Semiconductor device with crystalline silicon-germanium-carbon alloy.
  18. Eberl Karl,DEX ; Brunner Karl,DEX, Semiconductor structure for a transistor.
  19. Baliga Bantval J. (Raleigh NC) Bhatnagar Mohit (Raleigh NC), Silicon carbide field effect transistor.

이 특허를 인용한 특허 (20)

  1. Enicks, Darwin Gene; Carver, Damian, Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization.
  2. Enicks,Darwin Gene; Carver,Damian, Bandgap engineered mono-crystalline silicon cap layers for SiGe HBT performance enhancement.
  3. Sato,Hidekazu; Sukegawa,Takae; Suzuki,Kousuke, Heterobipolar transistor and method of fabricating the same.
  4. Sato,Hidekazu; Sukegawa,Takae; Suzuki,Kousuke, Heterobipolar transistor and method of fabricating the same.
  5. Enicks, Darwin G.; Chaffee, John Taylor; Carver, Damian A., Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto.
  6. Enicks, Darwin Gene; Chaffee, John; Carver, Damian A., Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto.
  7. Coolbaugh, Douglas D.; Hershberger, Douglas B.; Rassel, Robert M., MOS varactor using isolation well.
  8. Enicks,Darwin Gene, Method and system for controlled oxygen incorporation in compound semiconductor films for device performance enhancement.
  9. Enicks, Darwin G., Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator.
  10. Enicks, Darwin G., Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator.
  11. Shideler, Jay Albert; Prasad, Jayasimha Swamy; Schlupp, Ronald Lloyd; Bechdolt, Robert William, Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer.
  12. Adam, Thomas N.; Harame, David L.; Liu, Qizhi; Reznicek, Alexander, Power sige heterojunction bipolar transistor (HBT) with improved drive current by strain compensation.
  13. Domenicucci, Anthony G.; Narasimha, Shreesh; Nummy, Karen A.; Ontalus, Viorel C.; Wang, Yun-Yu, Reducing dislocation formation in semiconductor devices through targeted carbon implantation.
  14. Hodge, Wade J.; Joseph, Alvin J.; Krishnasamy, Rajendran; Liu, Qizhi; Orner, Bradley A., Silicon germanium (SiGe) heterojunction bipolar transistor (HBT).
  15. Hodge, Wade J.; Joseph, Alvin J.; Krishnasamy, Rajendran; Liu, Qizhi; Orner, Bradley A., Silicon germanium heterojunction bipolar transistor having interstitial trapping layer in base region.
  16. Lanzerotti,Louis D.; Ronan,Brian P.; Voldman,Steven H., Silicon germanium heterojunction bipolar transistor with carbon incorporation.
  17. Lanzerotti,Louis D.; Ronan,Brian P.; Voldman,Steven H., Silicon germanium heterojunction bipolar transistor with carbon incorporation.
  18. Bolbocianu, Liviu; Isailovic, Rade; Pribisic, Mirko; Mellary, Thomas; Porat, Alex, Wide activation angle pinch sensor section.
  19. Bolbocianu, Liviu; Isailovic, Rade; Pribisic, Mirko; Mellary, Thomas; Porat, Alex, Wide activation angle pinch sensor section.
  20. Bolbocianu, Liviu; Isailovic, Rade, Wide activation angle pinch sensor section and sensor hook-on attachment principle.
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