초록 ▼

A method and apparatus for producing buried ground planes in a silicon substrate for use in system modules is disclosed. Conductor patterns arc printed on the surface of the silicon substrate. Pores are created in the printed conductor patterns by a chemical anodization process. The pores are then f

A method and apparatus for producing buried ground planes in a silicon substrate for use in system modules is disclosed. Conductor patterns arc printed on the surface of the silicon substrate. Pores are created in the printed conductor patterns by a chemical anodization process. The pores are then filled with a conductive metal, such as tungsten, molybdenum, or copper by a selective deposition process to produce a low impedance ground buried in the substrate.

대표청구항 ▼

A method and apparatus for producing buried ground planes in a silicon substrate for use in system modules is disclosed. Conductor patterns arc printed on the surface of the silicon substrate. Pores are created in the printed conductor patterns by a chemical anodization process. The pores are then f

A method and apparatus for producing buried ground planes in a silicon substrate for use in system modules is disclosed. Conductor patterns arc printed on the surface of the silicon substrate. Pores are created in the printed conductor patterns by a chemical anodization process. The pores are then filled with a conductive metal, such as tungsten, molybdenum, or copper by a selective deposition process to produce a low impedance ground buried in the substrate. l connection terminal from being functionally affected by cutting of said ribs. 7. A group of semiconductor device module frames, the group including: a plurality of semiconductor device module frames for fabricating, in a plurality of forms having different dimensions, semiconductor device modules having respective substrates of different areas on which at least one multiple pin integrated circuit is mounted, each of said semiconductor device module frames including: a semiconductor device module fabrication portion for fabricating a semiconductor device module and including a substrate on which at least one multiple pin integrated circuit is mounted, said semiconductor device module fabrication portion having a pair of lengthwise sides and ends transverse to said length wise sides; and a framework integral with and located on opposite sides of said semiconductor device module fabrication portion, said framework including, at each of said lengthwise sides of said device module fabrication portion, respective longitudinal sides spaced from and opposite respective lengthwise sides of said semiconductor device module fabrication portion and pairs of ribs connecting said respective longitudinal sides of said framework to said semiconductor device module fabrication portion at said ends of said semiconductor device module fabrication portion, establishing fixed relative positional relationships between said framework and said semiconductor device module fabrication portion, wherein said longitudinal sides of respective frames define outermost widths of the respective frames, the outermost widths of said plurality of semiconductor device module frames are uniform, and areas of said substrates and dimensions of said ribs of respective semiconductor device module frames are not uniform. 8. The group of semiconductor device module frames according to claim 7, wherein each of said semiconductor device module frames also includes positioning means for positioning said semiconductor device module fabrication portion of said semiconductor device module frame during processing of said semiconductor device module fabrication portion. 9. The group of semiconductor device module frames according to claim 8, wherein said positioning means is a positioning hole in each semiconductor device module frame. 10. The group of semiconductor device module frames according to claim 9, wherein the positioning hole is located in one of said longitudinal sides of each semiconductor device module frame. 11. The group of semiconductor device module frames according to claim 7, wherein, in each of said semiconductor device module frames, severing said ribs separates said semiconductor device module fabrication portion from said semiconductor device module frame including said semiconductor device module fabrication portion and produces a semiconductor device module. 12. The group of semiconductor device module frames according to claim 11, wherein, in each of said semiconductor device module frames, said semiconductor device module fabrication portion includes an external connection terminal for making external connections to said semiconductor device module, said external connection terminal being separated from said ribs to prevent said external connection terminal from being functionally affected by cutting of said ribs. 13. The semiconductor device module frame according to claim 1, wherein said semiconductor device module fabrication portion and said framework lie in a plane. 14. The group of semiconductor device module frames according to claim 7, wherein each of said semiconductor device module frames is planar.