초록 ▼

An electronic assembly comprising one or more high performance integrated circuits includes at least one high capacity heat sink. The heat sink, which comprises a number of fins projecting substantially radially from a core, is structured to capture air from a fan and to direct the air to optimize h

An electronic assembly comprising one or more high performance integrated circuits includes at least one high capacity heat sink. The heat sink, which comprises a number of fins projecting substantially radially from a core, is structured to capture air from a fan and to direct the air to optimize heat transfer from the heat sink. The heat sink fins can be formed in different shapes. In one embodiment, the fins are curved. In another embodiment, the fins are bent. In yet another embodiment, the fins are curved and bent. Methods of fabricating heat sinks and electronic assemblies, as well as application of the heat sink to an electronic assembly and to an electronic system, are also described.

대표청구항 ▼

An electronic assembly comprising one or more high performance integrated circuits includes at least one high capacity heat sink. The heat sink, which comprises a number of fins projecting substantially radially from a core, is structured to capture air from a fan and to direct the air to optimize h

An electronic assembly comprising one or more high performance integrated circuits includes at least one high capacity heat sink. The heat sink, which comprises a number of fins projecting substantially radially from a core, is structured to capture air from a fan and to direct the air to optimize heat transfer from the heat sink. The heat sink fins can be formed in different shapes. In one embodiment, the fins are curved. In another embodiment, the fins are bent. In yet another embodiment, the fins are curved and bent. Methods of fabricating heat sinks and electronic assemblies, as well as application of the heat sink to an electronic assembly and to an electronic system, are also described. a portion thereof is disposed inside a plurality of pores formed in the anode conductor, the second conductive polymer film is formed such that it covers apertures of the plurality of pores, and the third conductive polymer film is formed as an outermost film of the conductive polymer layer. 7. The method for manufacturing a solid electrolytic capacitor according to claim 1, wherein the first conductive polymer film is formed as an outermost film of the conductive polymer layer on the second conductive polymer film. 8. The method for manufacturing a solid electrolytic capacitor according to claim 1, wherein the difference between the pH of the first solution and the pH of the second solution is at least 2.5. 9. The method for manufacturing a solid electrolytic capacitor according to claim 1, wherein the first solution is alkaline and the second solution is acidic. 10. The method for manufacturing a solid electrolytic capacitor according to claim 1, wherein at least one selected from the first conductive polymer film and the second conductive polymer film is formed by arranging a positive electrode and a negative electrode such that at least a portion of a film formation substrate including the anode conductor and the dielectric layer is disposed between these electrodes, and carrying out electrolytic oxidative polymerization using the positive electrode and the negative electrode. 11. The method for manufacturing a solid electrolytic capacitor according to claim 10, wherein a plurality of film formation substrates and a plurality of positive electrodes corresponding to those film formation substrates are prepared; and wherein for each of the positive electrodes, at least a portion of the film formation substrate corresponding to that positive electrode is disposed between the positive electrode and the negative electrode closest to that positive electrode. 12. A method for manufacturing a solid electrolytic capacitor comprising an anode conductor that is made of a valve metal, a dielectric layer that is formed on a surface of the anode conductor, and a solid electrolyte that is formed on a surface of the dielectric layer and includes a conductive polymer layer, the method comprising: forming at least a portion of the conductive polymer layer by electrolytic oxidative polymerization; wherein, when an average depth of a plurality of pores formed in the anode conductor exceeds 40 μm, as a first step of the electrolytic oxidative polymerization, a first conductive polymer film serving as a portion of the conductive polymer layer is formed in a first solution such that at least a portion thereof is arranged within the plurality of pores; as a second step of the electrolytic oxidative polymerization, a second conductive polymer film serving as another portion of the conductive polymer layer is formed in a second solution, whose pH is lower than that of the first solution, such that it covers apertures of the plurality of pores; and when an average depth of a plurality of pores formed in the anode conductor is 40 μm or less, as a first step of the electrolytic oxidative polymerization, a second conductive polymer film serving as a portion of the conductive polymer layer is formed in a second solution such that it covers apertures of the plurality of pores formed in the anode conductor; as a second step of the electrolytic oxidative polymerization, a first conductive polymer film serving as another portion of the conductive polymer layer is formed as an outermost film of the conductive polymer layer in a first solution, whose pH is higher than that of the second solution. 13. A solid electrolytic capacitor, comprising: an anode conductor that is made of a valve metal; a dielectric layer that is formed on a surface of the anode conductor; and a solid electrolyte that is formed on a surface of the dielectric layer and includes a conductive polymer layer; wherein the anode conductor includes a plurality of po res; wherein the conductive polymer layer comprises a first conductive polymer film made of a plurality of particles, and a second conductive polymer film having an average particle diameter that is larger than the average particle diameter of said plurality of particles; wherein the second conductive polymer film is formed such that it covers the plurality of pores; and wherein the first conductive polymer film is formed such that at least a portion thereof is disposed inside the plurality of pores, or the first conductive polymer film is arranged as an outermost film of the conductive polymer layer. 14. The solid electrolytic capacitor according to claim 13, wherein the conductive polymer layer further includes a third conductive polymer film made of a plurality of particles having an average particle diameter that is smaller than the average particles size of the second conductive polymer film, the first conductive polymer film is formed such that at least a portion thereof is disposed inside the plurality of pores, and the third conductive polymer film is arranged as an outermost film of the conductive polymer film. 15. The solid electrolytic capacitor according to claim 13, wherein the first conductive polymer film is arranged as an outermost film of the conductive polymer layer, and the average particle diameter of the plurality of particles constituting the first conductive polymer film is not greater than 5 μm. 16. The solid electrolytic capacitor according to claim 13, wherein the first conductive polymer film is formed such that at least a portion thereof is disposed inside the plurality of pores, and the average particle diameter of the plurality of particles constituting the first conductive polymer film is not greater than 0.1 μm. 17. The solid electrolytic capacitor according to claim 13, wherein the first conductive film is formed such that at least a portion thereof is disposed inside the plurality of pores, and the average particle diameter of the plurality of particles constituting the first conductive polymer film is not greater than 20% of the pore diameter corresponding to the most frequent value of the volume content distribution of pore diameters of the plurality of pores. 18. The solid electrolytic capacitor according to claim 13, wherein the first conductive film is formed such that at least a portion thereof is disposed inside the plurality of pores, and the average depth of the plurality of pores exceeds 40 μm. 19. The solid electrolytic capacitor according to claim 13, wherein the valve metal is at least one metal selected from aluminum, tantalum and niobium. 20. The solid electrolytic capacitor according to claim 13, wherein at least one selected from the first conductive polymer film and the second conductive polymer film includes at least one polymer of a material selected from pyrrole, thiophene and 3,4-ethylenedioxythiophene and their derivatives.