최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
DataON 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Edison 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
---|---|
국제특허분류(IPC7판) |
|
출원번호 | US-0795784 (2001-02-28) |
발명자 / 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 | 피인용 횟수 : 48 인용 특허 : 434 |
Compound semiconductor structures and devices can be grown on patterned oxide layers deposited on silicon. The deposition of Group II-VI and Group II-V compound semiconductors on patterned wafers results in an increase in the critical thickness for lattice mismatched layers and the relief of strain
Compound semiconductor structures and devices can be grown on patterned oxide layers deposited on silicon. The deposition of Group II-VI and Group II-V compound semiconductors on patterned wafers results in an increase in the critical thickness for lattice mismatched layers and the relief of strain energy through side walls. As a result, high crystalline quality compound semiconductor material can be grown on less expensive and more accessible substrate to more cost effectively produce semiconductor components and devices having enhanced reliability.
Compound semiconductor structures and devices can be grown on patterned oxide layers deposited on silicon. The deposition of Group II-VI and Group II-V compound semiconductors on patterned wafers results in an increase in the critical thickness for lattice mismatched layers and the relief of strain
Compound semiconductor structures and devices can be grown on patterned oxide layers deposited on silicon. The deposition of Group II-VI and Group II-V compound semiconductors on patterned wafers results in an increase in the critical thickness for lattice mismatched layers and the relief of strain energy through side walls. As a result, high crystalline quality compound semiconductor material can be grown on less expensive and more accessible substrate to more cost effectively produce semiconductor components and devices having enhanced reliability. nt while said anode is formed of a transparent conductive film. 12. A method according to claim 9, wherein said passivation film is formed of an insulating film containing silicon. 13. A method of manufacturing an EL display device, comprising the steps of: forming a cathode; forming a light emitting layer on said cathode; forming an anode on said light emitting layer; forming a passivation film on said anode; and doping said light emitting layer with an alkali metal element or an alkaline earth metal element through said passivation film. 14. A method according to claim 13, wherein said light emitting layer is doped with the alkali metal element or the alkaline earth metal element such that the concentration of the alkali metal element or alkaline earth metal element is the highest in the vicinities of the interface between said cathode and said light emitting layer. 15. A method according to claim 13, wherein said cathode is formed of a metal film containing an alkali metal element or an alkaline earth metal element while said anode is formed of a transparent conductive film. 16. A method according to claim 13, wherein said passivation film is formed of an insulating film containing silicon. 17. A method of manufacturing an EL display device, comprising the steps of: forming a TFT over a substrate; forming a cathode that is electrically connected to said TFT; forming a light emitting layer on said cathode; forming an anode on said light emitting layer; forming a passivation film on said anode; and doping said light emitting layer with an alkali metal element or an alkaline earth metal element through said passivation film. 18. A method according to claim 17, wherein said light emitting layer is doped with the alkali metal element or the alkaline earth metal element such that the concentration of the alkali metal element or alkaline earth metal element is the highest in the vicinities of the interface between said cathode and said light emitting layer. 19. A method according to claim 17, wherein said cathode is formed of a metal film containing an alkali metal element or an alkaline earth metal element while said anode is formed of a transparent conductive film. 20. A method according to claim 17, wherein said passivation film is formed of an insulating film containing silicon. 21. A method of manufacturing an EL display device, comprising the steps of: forming a cathode; forming a light emitting layer on said cathode; forming an anode on said light emitting layer; forming a passivation film on said anode; selectively forming a resist on said passivation film; and doping said light emitting layer with an alkali metal element or an alkaline earth metal element through said passivation film using said resist as a mask to dope. 22. A method according to claim 21, wherein said light emitting layer is doped with the alkali metal element or the alkaline earth metal element such that the concentration of the alkali metal element or alkaline earth metal element is the highest in the vicinities of the interface between said cathode and said light emitting layer. 23. A method according to claim 21, wherein said cathode is formed of a metal film containing an alkali metal element or an alkaline earth metal element while said anode is formed of a transparent conductive film. 24. A method according to claim 21, wherein said passivation film is formed of an insulating film containing silicon.
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.