초록 ▼

The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. A target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil, thereby producing electrons

The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. A target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil, thereby producing electrons and ions. In one embodiment, one or both of the signals to the substrate and the target are modulated. Preferably, the modulated signal to the substrate includes a negative voltage portion and a zero voltage portion.

대표청구항 ▼

The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. A target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil, thereby producing electrons

The present invention provides a method and apparatus for achieving conformal step coverage of one or more materials on a substrate using sputtered ionized material. A target provides a source of material to be sputtered by a plasma and then ionized by an inductive coil, thereby producing electrons and ions. In one embodiment, one or both of the signals to the substrate and the target are modulated. Preferably, the modulated signal to the substrate includes a negative voltage portion and a zero voltage portion. een the conductive silicide and the conductive material within the contact opening. 13. The method of forming a conductive contact of claim 9, wherein after forming the transistor gate structure and before forming the dielectric layer, forming an etch stop layer over the substrate and the gate structure. 14. The method of forming a conductive contact of claim 13, wherein the etch stop layer is electrically insulative, and further comprising etching through at least a portion of the etch stop layer within the contact opening after the oxidizing. 15. The method of claim 1 wherein the substrate comprises semiconductive material and the oxidizing conditions oxidize at least some of the semiconductive material, the method further comprising etching at least some of the oxidized semiconductive material from the contact opening prior to forming the conductive material therewithin. 16. A method of forming a conductive contact, comprising: forming a transistor gate structure over a substrate, the gate structure comprising a conductive silicide covered by insulative material, the conductive silicide being on and in direct contact with a conductively doped polysilicon material; forming a dielectric layer over the substrate and the gate structure; etching the dielectric layer to form a contact opening adjacent the gate structure, the etching being effective to expose the conductive silicide of the gate structure; after the etching, oxidizing the exposed silicide within the contact opening effective to form an insulative isolation mass within the contact opening on the conductive silicide; and after the oxidizing, forming conductive material within the contact opening and on the insulative isolation mass. 17. The method of forming a conductive contact of claim 16, wherein the conductive silicide is WSix. 18. The method of forming a conductive contact of claim 16, wherein the conductive silicide is a silicon rich silicide having a silicon to metal ratio of from greater than 2 to less than 3 silicon atoms per metal atom. 19. The method of forming a conductive contact of claim 16, wherein the forming of the gate structure comprises forming an insulative sidewall spacer on at least one side of the gate structure, the etching exposing the insulative sidewall spacer. 20. The method of forming a conductive contact of claim 16, wherein the forming of the gate structure comprises forming an insulative sidewall spacer on at least one side of the gate structure, the insulative sidewall spacer having a height, the etching exposing the insulative sidewall spacer and reducing the height. 21. The method of forming a conductive contact of claim 16, wherein the forming of the gate structure comprises forming an insulative sidewall spacer on at least one side of the gate structure and forming an insulative cap on the conductive silicide, the etching exposing the insulative sidewall spacer. 22. The method of forming a conductive contact of claim 16, wherein the insulative isolation mass is formed to have a thickness of at least 50 Angstroms between the conductive silicide and the conductive material within the contact opening. 23. The method of forming a conductive contact of claim 16, wherein the insulative isolation mass is formed to have a thickness of at least 100 Angstroms between the conductive silicide and the conductive material within the contact opening. 24. The method of forming a conductive contact of claim 16, wherein the insulative isolation mass is formed to have a thickness of at least 150 Angstroms between the conductive silicide and the conductive material within the contact opening. 25. The method of forming a conductive contact of claim 16, wherein after forming the transistor gate structure and before forming the dielectric layer, forming an etch stop layer over the substrate and the gate structure. 26. The method of forming a conductive contact of claim 25, comprising etching through at least a portion of the etch st