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A light emitting device or image display includes a fluorescent material as a wavelength converter for converting a wavelength into another. The fluorescent material is disposed in a predetermined positional relation, to prevent external leakage of primary light and to extract secondary light made b

A light emitting device or image display includes a fluorescent material as a wavelength converter for converting a wavelength into another. The fluorescent material is disposed in a predetermined positional relation, to prevent external leakage of primary light and to extract secondary light made by wavelength-converting the primary light with a very high efficiency. By using a semiconductor light emitting element for ultraviolet emission and combining it with a fluorescent material or any other appropriate material having a wavelength converting function, various kinds of applications, such as illuminator, having a remarkably long-life light source can be made. The semiconductor light emitting element preferably has a emission wavelength near 330 nm, and preferably uses BGaN in its light emitting layer.

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A light emitting device or image display includes a fluorescent material as a wavelength converter for converting a wavelength into another. The fluorescent material is disposed in a predetermined positional relation, to prevent external leakage of primary light and to extract secondary light made b

A light emitting device or image display includes a fluorescent material as a wavelength converter for converting a wavelength into another. The fluorescent material is disposed in a predetermined positional relation, to prevent external leakage of primary light and to extract secondary light made by wavelength-converting the primary light with a very high efficiency. By using a semiconductor light emitting element for ultraviolet emission and combining it with a fluorescent material or any other appropriate material having a wavelength converting function, various kinds of applications, such as illuminator, having a remarkably long-life light source can be made. The semiconductor light emitting element preferably has a emission wavelength near 330 nm, and preferably uses BGaN in its light emitting layer. eparating between a primary charged particle beam and a secondary charged particle beam, the secondary charged particle beam resulting from interaction of the primary charged particle beam with a sample, the method comprising: (a) directing the primary charged particle beam along a first axis passing through an opening in a detector, which has charged particle detecting regions outside said opening; and (b) affecting the trajectory of the primary charged particle beam to provide the primary charged particle beam propagation to the sample along a second axis substantially parallel to and spaced-apart from said first axis, thereby causing the secondary charged particle beam propagation to the detecting region of said detector outside said opening. 2. The method according to claim 1, wherein said affecting comprises passing the primary charged particle beam through a deflection assembly producing two deflection fields, which deflect the primary charged particle beam from its propagation along the first axis to the propagation of the primary charged particle beam along the second axis, said two deflection fields deflecting the secondary charged particle to provide the propagation of the secondary charged particle beam to the detecting region of said detector outside said opening. 3. The method according to claim 1, wherein said affecting comprises passing the primary charged particle beam through a beam directing device including a focusing assembly having an optical axis parallel to said first axis, and a deflection assembly, the deflection assembly deflecting the primary charged particle beam to provide from its propagation along the first axis to the propagation of the primary charged particle beam along the second axis parallel to said optical axis of the focusing assembly. 4. The method according to claim 3, wherein said deflecting comprises applying to the primary charged particle beam two deflection fields at two successive locations along the optical axis of the focusing assembly. 5. The method according to claim 3, wherein said first axis is substantially parallel to and spaced-apart from the optical axis of the focusing assembly. 6. The method according to claim 5, wherein said second axis substantially coincides with the optical axis of the focusing assembly. 7. The method according to claim 3, wherein said first axis substantially coincides with the optical axis of the focusing assembly. 8. The method according to claim 7, wherein said second axis is parallel to and spaced-apart from the optical axis of the focusing assembly. 9. A method of separating between a primary charged particle beam and a secondary charged particle beam, the secondary charged particle beam resulting from interaction of the primary charged particle beam with the sample, the method comprising: (a) directing the primary charged particle beam towards a deflection assembly along a first axis passing through an opening in a detector, which has charged particle detecting regions outside said opening; (b) passing the primary charged particle beam through the deflection assembly thereby affecting the trajectory of the primary charged particle beam to provide the primary charged particle beam propagation to the sample along a second axis substantially parallel to and spaced-apart from said first axis, thereby causing the secondary charged particle beam propagation to the detecting region of said detector outside said opening. 10. A method of separating between a primary charged particle beam and a secondary charged particle beam, the secondary charged particle beam resulting from interaction of the primary charged particle beam with the sample, the method comprising: (a) directing the primary charged particle beam towards a beam directing device along a first axis passing through an opening in a detector, which has charged particle detecting regions outside said opening; (b) passing the primary charged particle beam through the beam direc ting device that includes a focusing assembly defining an optical axis and a deflection assembly, the deflection assembly being operable to produced two deflection fields in two successive regions, respectively, along the optical axis of the focusing assembly, to thereby affect the trajectory of the primary charged particle beam to provide the primary charged particle beam deflection from its propagation along the first axis to the propagation of the primary charged particle beam to the sample along a second axis substantially parallel to and spaced-apart from said first axis, said two deflection fields affecting the trajectory of the secondary charged particle beam to cause the secondary charged particle beam propagation to the detecting region of said detector outside said opening. 11. A method of separating between a primary charged particle beam and a secondary charged particle beam, the secondary charged particle beam resulting from interaction of the primary charged particle beam with the sample, the method comprising: directing the primary charged particle beam towards a beam directing device along a first axis passing through an opening in a detector, which has charged particle detecting regions outside said opening; passing the primary charged particle beam through the beam directing device that includes a focusing assembly defining an optical axis forming an angle with said first axis, and a deflection assembly, the deflection assembly being operable to deflect the primary charged particle beam from its propagation along the first axis to the propagation of the primary charged particle beam to the sample along a second axis substantially parallel to the optical axis of the focusing assembly, and to affect the trajectory of the secondary charged particle beam to provide the secondary charged particle beam propagation to the detecting region of said detector outside said opening. 12. A method of inspecting a sample with a charged particle beam, the method comprising the steps of: providing a primary charged particle beam propagating towards a beam directing device along a first axis passing through an opening in a detector, which has charged particle detecting regions outside said opening; passing the primary charged particle beam through the beam directing device that includes a focusing assembly defining an optical axis and a deflection assembly, to thereby affect the trajectory of said primary charged particle beam to cause the primary charged particle beam propagation along a second axis parallel to and spaced-apart from said first axis and to cause propagation of a secondary charged particle beam, produced by interaction between the primary charged particle beam and the sample, to the detecting region outside said opening. 13. The method according to claim 12, wherein first axis is substantially perpendicular to the sample's surface. 14. The method according to claim 13, wherein said first axis is substantially parallel to the optical axis of the focusing assembly. 15. The method according to claim 14, wherein said first axis substantially coincides with the optical axis of the focusing assembly, said second axis being parallel to and spaced-apart from the optical axis of the focusing assembly. 16. The method according to claim 13, wherein said first axis is spaced-apart from the optical axis of the focusing assembly. 17. The method according to claim 16, wherein said second axis substantially coincides with the optical axis of the focusing assembly. 18. The method according to claim 12, wherein the deflection assembly affects the trajectory of the primary charged particle beam by applying to the primary charged particle beam two deflection fields at successive locations along the optical axis of the focusing assembly, said deflection fields affecting the trajectory of the secondary charged particle beam to cause said propagation of the secondary charged particle beam to the detecting region outside