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A package with an integral window for housing a microelectronic device. The integral window is bonded directly to the package without having a separate layer of adhesive material disposed in-between the window and the package. The device can be a semiconductor chip, CCD chip, CMOS chip, VCSEL chip,

A package with an integral window for housing a microelectronic device. The integral window is bonded directly to the package without having a separate layer of adhesive material disposed in-between the window and the package. The device can be a semiconductor chip, CCD chip, CMOS chip, VCSEL chip, laser diode, MEMS device, or IMEMS device. The multilayered package can be formed of a LTCC or HTCC cofired ceramic material, with the integral window being simultaneously joined to the package during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded so that the light-sensitive side is optically accessible through the window. The package has at least two levels of circuits for making electrical interconnections to a pair of microelectronic devices. The result is a compact, low-profile package having an integral window that is hermetically sealed to the package prior to mounting and interconnecting the microelectronic device(s).

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A package with an integral window for housing a microelectronic device. The integral window is bonded directly to the package without having a separate layer of adhesive material disposed in-between the window and the package. The device can be a semiconductor chip, CCD chip, CMOS chip, VCSEL chip,

A package with an integral window for housing a microelectronic device. The integral window is bonded directly to the package without having a separate layer of adhesive material disposed in-between the window and the package. The device can be a semiconductor chip, CCD chip, CMOS chip, VCSEL chip, laser diode, MEMS device, or IMEMS device. The multilayered package can be formed of a LTCC or HTCC cofired ceramic material, with the integral window being simultaneously joined to the package during LTCC or HTCC processing. The microelectronic device can be flip-chip bonded so that the light-sensitive side is optically accessible through the window. The package has at least two levels of circuits for making electrical interconnections to a pair of microelectronic devices. The result is a compact, low-profile package having an integral window that is hermetically sealed to the package prior to mounting and interconnecting the microelectronic device(s). l., 257/314 e. 8. The method according to claim 1, wherein shifting the composition of the liquid phase from the equilibrium composition to the composition where the conductive element is excessive thereby to precipitate the conductive element includes a heat treatment in an atmosphere containing at least one element selected from the group consisting of N, O, and H. 9. The method according to claim 1, wherein shifting the composition of the liquid phase from the equilibrium composition to the composition where the conductive element is excessive thereby to precipitate the conductive element includes a heat treatment in an atmosphere enabling a formation of a gas phase compound containing the substance having a lower melting point, and removing the gas phase compound. 10. The method according to claim 1, wherein removing all materials from the surface of the insulating film excluding those formed on the recessed portion comprises: introducing a gas containing a halogen to form a halide; and removing the halide. 11. The method according to claim 1, wherein removing all materials from the surface of the insulating film excluding those formed on the recessed portion comprises: introducing a gas containing at least one element selected from chlorine, fluorine, iodine, and bromine to form a chloride, fluoride, iodide, or bromide; and removing the halide. 12. A method of manufacturing semiconductor device which comprises: forming an insulating film on a semiconductor substrate; forming a recessed portion in said insulating film; forming a liquid phase containing a conductive element and a substance having a lower melting point than that of said conductive element in said recessed portion; forming a conductive film in said recessed portion by shifting the composition of said liquid phase from an equilibrium composition to a composition where said conductive element is excessive, thereby precipitating said conductive element; and removing all of materials from the surface of said insulating film excluding those formed on said recessed portion; an additive element is introduced into said conductive element during or after the precipitation of said conductive element. 13. The method according to claim 12, wherein the conductive element is formed of a single kind of element. 14. The method according to claim 12, wherein the additive element is an element which is capable of improving the electromigration resistance or stress migration resistance of the conductive film after the precipitation. 15. The method according to claim 12, wherein the additive element is an element which is capable of lowering the solid solution limit of the substance having a lower melting point after precipitation. 16. A method of manufacturing semiconductor device which comprises: forming an insulating film on a semiconductor substrate; forming in said insulating film a recessed portion in which a thin film comprising a material exhibiting a higher surface energy than that of said insulating film is at least partially formed; forming in said insulating film a liquid phase containing a conductive element and a substance having a lower melting point than that of said conductive element; forming a conductive film at least in said recessed portion by shifting the composition of said liquid phase from an equilibrium composition to a composition where said conductive element is excessive, thereby precipitating said conductive element; and removing all of materials from the surface of said insulating film excluding those formed on said recessed portion. 17. The method according to claim 16, wherein forming the liquid phase containing the conductive element and the substance having a lower melting point than that of the conductive element in the recessed portion is performed in such a manner that a layer of the substance having a lower melting point than that of the conductive element is formed at least in the recessed portion, and then the layer o