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An abuse-tolerant microwave food packaging material includes an array of solid shapes of microwave energy reflective material, for example, of aluminum foil, disposed on a substrate. The an array of shapes of microwave energy reflective material shield microwave energy from a food product while rema

An abuse-tolerant microwave food packaging material includes an array of solid shapes of microwave energy reflective material, for example, of aluminum foil, disposed on a substrate. The an array of shapes of microwave energy reflective material shield microwave energy from a food product while remaining substantially resistant to arcing or burning under abusive cooking conditions in an operating microwave oven.

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An abuse-tolerant microwave food packaging material includes an array of solid shapes of microwave energy reflective material, for example, of aluminum foil, disposed on a substrate. The an array of shapes of microwave energy reflective material shield microwave energy from a food product while rema

An abuse-tolerant microwave food packaging material includes an array of solid shapes of microwave energy reflective material, for example, of aluminum foil, disposed on a substrate. The an array of shapes of microwave energy reflective material shield microwave energy from a food product while remaining substantially resistant to arcing or burning under abusive cooking conditions in an operating microwave oven. ial comprising the steps of: generating a pulsed ultra-violet laser beam using a laser; directing the pulsed ultra-violet laser beam at a surface of the material; and removing portions of the material from the directed surface to form the blind hole in a manner such that, the bottom of the hole is smooth to within less than 3 microns RMS, a thermally affected zone penetrate less than 2 microns from the bottom of the blind hole, and material is removed at an average rate greater than 12 cubic microns per pulse. 16. The method of claim 14 further including the step of circularly polarizing the laser beam. 17. The method of claim 15, further including the step of generating the pulsed laser beam in a manner such that pulse widths of pulses included in the pulsed laser beam are less than 5 picoseconds. 18. The method of claim 15, further including the step of ion beam etching the bottom of the blind hole. 19. The method of claim 15, further including the step of a chemically etching the poly-crystalline material. 20. The method of claim 15, further including the step of rastering the laser beam over the surface of the poly-crystalline material. 21. The method of claim 15, wherein the poly-crystalline material includes silicon. 22. The method of claim 15, wherein the poly-crystalline material includes diamond. 23. The method of claim 15, wherein the poly-crystalline material includes sapphire. 24. The method of claim 15, wherein the poly-crystalline material includes diamond-like graphite. 25. A method of machining holes in poly-crystalline material comprising the steps of: providing a laser source configured to produce ultraviolet light pulses less than 1 picosecond wide; producing the light pulses; focusing the light pulses on a target surface such that a fluence is attained, the fluence being sufficient to remove material at an average rate of at least 12,000 cubic microns per second, and the fluence being less than fluences that would produce pits or spikes greater than 10 microns in size. 26. The method of claim 25 further including the step of elliptically polarizing the light pulses. 27. The method of claim 25, wherein the poly-crystalline material includes silicon. 28. The method of claim 27, further including the step of chemically etching to the poly-crystalline material. 29. The method of claim 27, further including the step of ion beam etching a surface of the machined hole. 30. The method of claim 27, further including the step of applying movement such that the light pulses are rastered over the target surface. 31. The method of claim 27, wherein the fluence is sufficient to remove material at an average rate of at least 12 cubic microns per pulse. 32. The method of claim 25, wherein the poly-crystalline material includes diamond. 33. A method of determining the state of an integrated circuit comprising the steps of: laser machining a blind hole in a substrate; extending the laser machined hole to the circuit; and establishing a connection through the hole between a sensor and the circuit. 34. The method of claim 33, wherein the substrate includes a substrate of the integrated circuit. 35. The method of claim 34, wherein the laser machining step results in thermally affected zone that extends less than 2 microns from a bottom surface of the blind hole. 36. The method of claim 34, wherein the laser machining step removes material at an average rate of at least 12,000 cubic microns per second. 37. The method of claim 34, wherein the step of extending the blind hole includes ion beam etching material from a surface of the blind hole. 38. The method of claim 34, further including the step of chemically etching a surface of the blind hole. 39. The method of claim 33, wherein the integrated circuit includes an optical component. 40. The method of claim 33, wherein the sensor includes an optical component. 41. A method of modifying an integrated circuit comprising the steps of: laser machining a blind hole in a substrate; extending the blind hole to the integrated circuit; and exchanging material, through the extended hole, with the integrated circuit. 42. The method of claim 41, wherein the substrate includes material from the group consisting of diamond, diamond-like graphite, Al2O3,BeO, Aluminum nitride, and sapphire. 43. The method of claim 41, wherein the substrate includes silicon. 44. The method of claim 41, wherein the substrate includes silicon and the laser machining step includes removing material at an average rate of at least 12,000 cubic microns per second. 45. The method of claim 41, wherein the substrate includes silicon and the laser machining step results in a thermally affected zone that extends less than 5 microns from a bottom surface of the blind hole. 46. The method of claim 41, wherein the substrate includes silicon and the step of extending the blind hole includes ion beam etching. 47. The method of claim 41, further including the step of chemically etching a bottom surface of the blind hole. 48. The method of claim 41, wherein the integrated circuit includes optical components. 49. A method of laser machining a material substantially including silicon, the method comprising the steps of: generating a pulsed laser beam using a laser system; and removing portions of the material using the pulsed laser beam in a manner such that surfaces smooth to within 2 microns RMS are produced and material is removed at an average rate greater than 6,000 cubic microns per second. 50. The method of claim 49, wherein material is removed at an average rate greater than 12,000 cubic microns per second. 51. The method of claim 49, wherein surfaces smooth to within 0.5 microns RMS are produced. 52. A method of integrated circuit production comprising the steps of: producing a first circuit on a first side of a substrate; generating a hole in the substrate at an average rate greater than 12,000 cubic microns per second; producing a second circuits on a second side of the substrate; the first circuit and the second circuit being coupled through the hole. 53. The method of claim 52, wherein the step of making a hole includes laser machining. 54. The method of claim 52, wherein one of the first circuit or the second circuit is an electromagnetic radiation shield. 55. The method of claim 52, wherein one of the first circuit or the second circuit is a reference voltage plane.