Organic semiconductor device having an oxide layer
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IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0057367
(2002-01-25)
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발명자
/ 주소 |
- Scheifers, Steven M.
- Gamota, Daniel R.
- Brazis, Jr., Paul W.
- Zhang, Jie
- Lach, Lawrence E.
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
0 인용 특허 :
2 |
초록
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A semiconductor device having a flexible or rigid substrate (11) having a gate electrode (21), a source electrode (61 and 101), and a drain electrode (62 and 102) formed thereon and organic semiconductor material (51, 81, and 91) disposed at least partially thereover. The gate electrode (21) has a t
A semiconductor device having a flexible or rigid substrate (11) having a gate electrode (21), a source electrode (61 and 101), and a drain electrode (62 and 102) formed thereon and organic semiconductor material (51, 81, and 91) disposed at least partially thereover. The gate electrode (21) has a thin dielectric layer 41 formed thereabout through oxidation. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.
대표청구항
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1. A device comprising: a substrate; at least one electrode comprising a gate disposed on the substrate; a dielectric layer comprising an oxide layer formed on an exterior surface of the at least one electrode; at least one additional electrode; an organic semiconductor layer disposed over at
1. A device comprising: a substrate; at least one electrode comprising a gate disposed on the substrate; a dielectric layer comprising an oxide layer formed on an exterior surface of the at least one electrode; at least one additional electrode; an organic semiconductor layer disposed over at least a portion of the dielectric layer and the at least one additional electrode, wherein at least one of the conductor, dielectric layer, and organic semiconductor is printed. 2. The device of claim 1 wherein the substrate comprises a flexible substrate. 3. The device of claim 1 wherein the substrate comprises a rigid substrate. 4. The device of claim 1 wherein the at least one electrode comprises a gate. 5. The device of claim 1 wherein the oxide layer is no greater than 10 microns in thickness. 6. The device of claim 1 wherein the oxide layer is between 100 and 10,000 Angstroms in thickness. 7. The device of claim 1 wherein the dielectric layer has no openings disposed therethrough. 8. The device of claim 1 wherein the at least one electrode is comprised of a metal. 9. The device of claim 8 wherein the dielectric layer comprises an oxide of the metal. 10. The device of claim 8 wherein the metal is comprised of at least one of copper, aluminum, titanium, tantalum, calcium, zirconium, chromium, and nickel. 11. The device of claim 10 wherein the dielectric layer comprises an oxide of the metal. 12. The device of claim 1 wherein the at least one electrode comprises electrode means for providing an electrode for an active device. 13. The device of claim 12 wherein the active device comprises a metal oxide semiconductor field effect transistor. 14. A metal oxide semiconductor field effect transistor comprising: a substrate; an electrode comprising a gate printed on the substrate; a dielectric comprising an oxide formed on the electrode; at least one additional electrode; an organic semiconductor material disposed over the dielectric and at least partially over the at least one additional electrode. 15. The metal oxide semiconductor field effect transistor of claim 14 wherein the at least one additional electrode comprises a second and third electrode comprising a drain and source disposed in contact with the organic semiconductor material. 16. The metal oxide semiconductor field effect transistor of claim 15 wherein the second and third electrodes are printed on the substrate. 17. The metal oxide semiconductor field effect transistor of claim 15 wherein the second and third electrodes are substantially oxide free. 18. The metal oxide semiconductor field effect transistor of claim 15 wherein the second electrode and the third electrode are each comprised of substantially the same material. 19. The metal oxide semiconductor field effect transistor of claim 18 wherein the material comprises one of copper, aluminum, titanium, chromium, gold, indium tin oxide, nickel, palladium, platinum, polyaniline, polyethylene dioxythiophene, silver, titanium nitride, tungsten, and aluminum doped zinc oxide. 20. The metal oxide semiconductor field effect transistor of claim 15 wherein the second and third electrodes have an oxidation resistant material disposed thereon. 21. The metal oxide semiconductor field effect transistor of claim 20 wherein the oxidation resistant material comprises one of an organic coating and an oxidation resistant metal. 22. The metal oxide semiconductor field effect transistor of claim 21 wherein the oxidation resistant metal comprises at least one of chrome, gold, and platinum. 23. The metal oxide semiconductor field effect transistor of claim 15 wherein the second and third electrodes are comprised of oxidation resistant metal. 24. The metal oxide semiconductor field effect transistor of claim 15 wherein the substrate comprises a flexible substrate. 25. The metal oxide semiconductor field effect transistor of claim 14 wherein the substrate comprises a substantially rigid substrate.
이 특허에 인용된 특허 (2)
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Jones Christopher D. W. ; Murphy Donald W. ; Rogers John A. ; Tate Jennifer ; Slusher Richart E., Method for fabricating a thin-film transistor.
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Tommie W. Kelley ; Dawn V. Muyres ; Mark J. Pellerite ; Timothy D. Dunbar ; Larry D. Boardman ; Terrance P. Smith, Surface modifying layers for organic thin film transistors.
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