초록 ▼

There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides of one active layer and crystallization is m

There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides of one active layer and crystallization is made. A boundary portion where crystal growth from one catalytic element introduction region meets crystal growth from the other catalytic element introduction region is formed in a region which becomes a source region or drain region.

대표청구항 ▼

There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides of one active layer and crystallization is m

There is disclosed a semiconductor device and a method of fabricating the semiconductor device in which a heat time required for crystal growth is shortened and a process is simplified. Two catalytic element introduction regions are arranged at both sides of one active layer and crystallization is made. A boundary portion where crystal growth from one catalytic element introduction region meets crystal growth from the other catalytic element introduction region is formed in a region which becomes a source region or drain region. material; detecting the electrostatic capacity of a distance with a surface of the workpiece support member as a reference; and controlling the laser output power by pulse oscillation in response to the electrostatic capacity which varies along with the thickness of the workpiece disposed on the workpiece support member, so that the bottom portion of the hole has a predetermined thickness. 6. The laser beam machining method according to claim 5, further comprising the step of: performing a peripheral groove by oscillating pulses intermittently at predetermined intervals when the machining head and the workpiece are moved relatively. 7. The laser beam machining method according to claim 5, further comprising the step of: adjusting the drilling depth by controlling the laser output power in response to the number of pulses of the laser output by pulse oscillation. 8. A laser beam machining apparatus of irradiating a laser beam by pulse oscillation from a nozzle to a rear surface of a workpiece while moving the nozzle and the workpiece relatively, so that blind holes are lined up in the workpiece with remain portions in a front surface side of the workpiece, comprising: a thickness detection unit detecting the thickness of the workpiece, an output power control unit controlling the output power of the laser beam in response to the result detected by the thickness detection unit so that the irradiation of the large power laser beam is switched to the irradiation of a small power laser beam after the irradiation of the large power laser beam at each drilling; a laser beam detection unit detecting the actual output power of the laser beam when the large power laser beam is irradiated, an adder adding the output power detected by the laser beam detection unit; and an adjusting unit adjusting the output power of the small power laser beam irradiated after the irradiation of the large power laser beam to conform to a command value in response to the result added by the adder. 9. The laser beam machining apparatus according to claim 8, wherein the thickness detection unit includes an electrostatic capacity sensor provided at the front end of the nozzle. 10. The laser beam machining apparatus according to claim 8, wherein the thickness detection unit includes a first electrode formed on an inner peripheral face of the nozzle made of insulating material; a second electrode formed on an outer peripheral face of the nozzle; and an electrostatic capacity sensor electrically connected to the first electrode and the second electrode, and the thickness of the workpiece is calculated based on the detection result obtained from the electrostatic capacity sensor. 11. The laser beam machining apparatus according to claim 8, wherein the irradiation power of the small power laser beam at each blind hole is set in a range between 70% or lower and 20% or higher of the irradiation power of the large power laser beam. 12. A laser beam machining method of irradiating a laser beam by pulse oscillation from a nozzle to a rear surface of a workpiece while moving the nozzle and the workpiece relatively, so that blind holes are lined up in the workpiece with remain portions in a front surface side of the workpiece, comprising the steps of: detecting the thickness of the workpiece; switching the irradiation of a large power laser beam to the irradiation of a small power laser beam after the irradiation of the large power laser beam at each drilling in response to the detected result of the thickness of the workpiece; detecting the actual output power of the laser beam when the large power laser beam is irradiated; adding the detected output power; and adjusting the output power of the small power laser beam irradiated after the irradiation of the large power laser beam to conform to a command value in response to the added result. 13. The laser beam machining method according to claim 12, wherein the output power of the large po wer laser beam is corrected so that the output power thereof conforms to the command value in response to the added result. 14. The laser beam machining method according to claim 12, wherein the irradiation power of the small power leaser beam at each drilling is set in a range between 70% or lower and 20% or higher of the irradiation power of the large power laser beam.