Positioning satellite system for measuring position of signal source
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G01S-005/12
H04B-007/185
출원번호
US-0089348
(2002-03-27)
우선권정보
JP-0282359 (1999-10-04)
국제출원번호
PCT/JP00/06879
(2000-04-10)
국제공개번호
WO01/25815
(2001-04-12)
발명자
/ 주소
Hayashi, Tomonao
출원인 / 주소
Chiba Institute of Technology
대리인 / 주소
McCormick, Paulding & Huber LLP
인용정보
피인용 횟수 :
2인용 특허 :
6
초록▼
A satellite system includes a signal source located on a surface of the earth, a surface of water, or in air; an orbiting satellite for measuring a position of the signal source, having a GPS receiver which receives a GPS signal from a GPS satellite system to measure the position of the orbiting sat
A satellite system includes a signal source located on a surface of the earth, a surface of water, or in air; an orbiting satellite for measuring a position of the signal source, having a GPS receiver which receives a GPS signal from a GPS satellite system to measure the position of the orbiting satellite, a frequency measuring device for receiving the radio wave signal emitted from the signal source to measure the frequency thereof, a memory for storing frequency data and position data, and a transmitting device for transmitting the data stored in the memory toward the earth; and a ground station, having a signal receiving device for receiving the data transmitted from the orbiting satellite, including a computer for calculating the position of the signal source based on the data received by the signal receiving device.
대표청구항▼
A satellite system includes a signal source located on a surface of the earth, a surface of water, or in air; an orbiting satellite for measuring a position of the signal source, having a GPS receiver which receives a GPS signal from a GPS satellite system to measure the position of the orbiting sat
A satellite system includes a signal source located on a surface of the earth, a surface of water, or in air; an orbiting satellite for measuring a position of the signal source, having a GPS receiver which receives a GPS signal from a GPS satellite system to measure the position of the orbiting satellite, a frequency measuring device for receiving the radio wave signal emitted from the signal source to measure the frequency thereof, a memory for storing frequency data and position data, and a transmitting device for transmitting the data stored in the memory toward the earth; and a ground station, having a signal receiving device for receiving the data transmitted from the orbiting satellite, including a computer for calculating the position of the signal source based on the data received by the signal receiving device. e has positive polarity, a potential measuring reference electrode is made of platinum, the thickness of the dielectric layer is about 40 .ANG. or less, a is about 88 mV per .ANG., and b is about -550 mV. 12. The method of claim 11, wherein further including rescaling the coefficient b by adding the value Δb, where Δb[mV]=-26 ln(NA2/NA1) in which NA1is a dopant concentration in a calibrating semiconducting wafer having a known dielectric layer thickness and NA2is a dopant concentration in the semiconducting wafer being measured. 13. The method of claim 1, wherein the step of determining the thickness of the dielectric layer includes determining the surface potential on the dielectric surface at a time greater than t=0 from the measured voltage decay. 14. The method of claim 13, wherein the surface potential is determined at a time of about 1 second after t=0. 15. The method of claim 13, wherein the step of determining the thickness of the dielectric layer includes using the surface potential at a time greater than t=0, VD,to calculate a dielectric thickness, T, via the expression VD=cT+d, in which the coefficients c and d are derived from a calibrating procedure. 16. The method of claim 15, wherein the calibrating procedure includes measuring a voltage decay on a plurality of semiconducting wafers each having a known dielectric layer thickness, and determining from each measured voltage decay the surface potential, VD,at the same time in the decay, the time being greater than t=0. 17. The method of claim 1, wherein the steps of depositing a charge onto a surface of the dielectric layer, measuring the voltage, V0,and determining the thickness of the dielectric layer all occur in less than about 7 seconds. 18. The method of claim 15, wherein the steps of depositing a charge onto a surface of the dielectric layer, measuring the voltage, VD,and determining the thickness of the dielectric layer all occur in less than about 7 seconds. 19. The method of claim 13, wherein the step of determining the thickness of the dielectric layer includes using the surface potential at a first time greater than t=0, VD1,and a second time greater than t=0 and different than the first time, VD2,to calculate a dielectric thickness, T. 20. The method of claim 19, wherein T is determined via the expression VD1-VD2=cT+d, in which the coefficients c and d are derived from a calibrating procedure. 21. The method of claim 1, further including determining the capacitance of the dielectric layer deposited on the semiconducting wafer. 22. The method of claim 21, wherein the capacitance is obtained from the relationship COX=JC/R, where JCthe ionic current at the steady state condition, R is the initial voltage decay rate, dV/dt|t=0,derived from the measured voltage decay. 23. The method of claim 1, wherein depositing ionic charge, measuring the voltage decay, and determining the thickness are performed on the measurement area smaller than a total surface area of the semiconducting wafer. 24. The method of claim 1, further including depositing a precharging ionic charge on the dielectric layer on a precharge area larger than an area for which the dielectric thickness is determined. 25. The method of claim 24, wherein the precharging ionic charge is of the same polarity as the charge deposited to achieve the steady state. 26. The method of claim 1 further including illuminating the dielectric surface. 27. The method of claim 1 further including performing the steps of depositing ionic charge, measuring voltage decay, and determining the dielectric thickness on a plurality of measurement sites on the dielectric layer. 28. The method of claim 1, wherein the ionic charge has a positive polarity. 29. The method of claim 1, wherein the ionic charge has a negative polarity. 30. A met
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이 특허에 인용된 특허 (6)
Ketchum Eleanor A., Computer-implemented method and apparatus for autonomous position determination using magnetic field data.
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Calhoun, Robert B., Systems and methods with improved three-dimensional source location processing including constraint of location solutions to a two-dimensional plane.
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