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A process of removing photoresist, previously subjected to ion implantation, from the surface of a workpiece. The process involves contacting the workpiece with a composition which includes liquid or supercritical carbon dioxide and between about 2% and about 20% of an alkanol having the structural

A process of removing photoresist, previously subjected to ion implantation, from the surface of a workpiece. The process involves contacting the workpiece with a composition which includes liquid or supercritical carbon dioxide and between about 2% and about 20% of an alkanol having the structural formula CxX2x+1OH, where X is fluorine, hydrogen or mixtures thereof; and x is an integer of 1 to 8, said percentages being by volume, based on the total weight of the composition.

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1. A process of removing photoresist previously subjected to ion implantation from a workpiece comprising contacting a workpiece, upon which a photoresist, previously subjected to ion implantation, is disposed, with a composition comprising liquid or supercritical carbon dioxide and an alkanol havin

1. A process of removing photoresist previously subjected to ion implantation from a workpiece comprising contacting a workpiece, upon which a photoresist, previously subjected to ion implantation, is disposed, with a composition comprising liquid or supercritical carbon dioxide and an alkanol having the structural formula CxX2x+1OH, where X is fluorine, hydrogen or mixtures thereof; and x is an integer of 1 to 8, wherein said alkanol is present in a concentration in the range of between about 2% and about 20%, said percentages being by volume, based on the total volume of the composition. 2. A process in accordance with claim 1 wherein said alkanol is present in a concentration of between about 5% and about 15%. 3. A process in accordance with claim 2 wherein said alkanol is present in a concentration of between about 8% and about 12%. 4. A process in accordance with claim 1 wherein x is 1 to 4. 5. A process in accordance with claim 4 where X is hydrogen. 6. A process in accordance with claim 5 wherein said alkanol is methanol, ethanol, n-propanol, isopropanol, n-butanol, isobutanol and t-butanol. 7. A process in accordance with claim 1 wherein said ion implantation to which said photoresist was previously subjected is at least about 1015ions/cm2. 8. A process in accordance with claim 1 wherein said composition is free of any stripping agent. 9. A process of removing photoresist previously subjected to ion implantation from a workpiece comprising contacting a workpiece, upon which a photoresist, previously subjected to ion implantation, with carbon dioxide and an alkanol having the structure formula CxX2x+1OH, where X is hydrogen, fluorine or mixtures thereof; and x is an integer of 1 to 8, said alkanol present in a concentration of between about 2% and about 20%, said percentages being by volume, based on the total volume of said carbon dioxide and said alkanol, at a pressure in the range of between about 5000 psi and about 7,500 psi and a temperature in the range of between about 60° C. and about 100° C. 10. A process in accordance with claim 9 wherein said workpiece is contacted at a pressure in the range of between about 5,500 psi and about 6,500 psi and a temperature in the range of between about 65° C. and about 85° C. 11. A process in accordance with claim 10 wherein said alkanol is present in a concentration of between about 5% and about 15%. 12. A process in accordance with claim 11 wherein x is an integer of 1 to 4. 13. A process in accordance with claim 12 wherein said workpiece is contacted at a pressure of about 5,800 psi and about 6,200 psi and a temperature of about 70° C. and about 75° C. 14. A process in accordance with claim 9 wherein said alkanol is methanol.