초록 ▼

Pinned layers that are synthetically, rather than directly, pinned are desirable for a Current Perpendicular to Plane Spin Valve structure because they are more stable. However, this comes at the cost or reduced performance. The present invention solves this problem by modifying the composition of A

Pinned layers that are synthetically, rather than directly, pinned are desirable for a Current Perpendicular to Plane Spin Valve structure because they are more stable. However, this comes at the cost or reduced performance. The present invention solves this problem by modifying the composition of AP2. AP2 is the antiparallel layer that contacts the antiferromagnetic layer (AP1 being in contact with the pinned layer). Said modification comprises the addition of chromium or vanadium to AP2. Examples of alloys suitable for use in AP2 include NiFeCr, NiCr, CoCr, CoFeCr, and CoFeV. Additionally, the ruthenium layer normally used to effect antiferromagnetic coupling between AP1 and AP2, is replaced by a layer of chromium. The resulting structure exhibits the stability of the synthetic pin unit and the performance of the direct pin unit.

대표청구항 ▼

Pinned layers that are synthetically, rather than directly, pinned are desirable for a Current Perpendicular to Plane Spin Valve structure because they are more stable. However, this comes at the cost or reduced performance. The present invention solves this problem by modifying the composition of A

Pinned layers that are synthetically, rather than directly, pinned are desirable for a Current Perpendicular to Plane Spin Valve structure because they are more stable. However, this comes at the cost or reduced performance. The present invention solves this problem by modifying the composition of AP2. AP2 is the antiparallel layer that contacts the antiferromagnetic layer (AP1 being in contact with the pinned layer). Said modification comprises the addition of chromium or vanadium to AP2. Examples of alloys suitable for use in AP2 include NiFeCr, NiCr, CoCr, CoFeCr, and CoFeV. Additionally, the ruthenium layer normally used to effect antiferromagnetic coupling between AP1 and AP2, is replaced by a layer of chromium. The resulting structure exhibits the stability of the synthetic pin unit and the performance of the direct pin unit. >N4,NiO, WO, WO3,BN, CrN, SiON, and AlSiO. 4. A thin film magnetic head according to claim 2, wherein the thickness of the inorganic insulation underlying layer is in the range of 0.15 μm to 0.5 μm. 5. A thin film magnetic head according to claim 1, wherein the organic insulation underlying layer is formed on the lower core layer, an inorganic insulation underlying layer is formed on the organic insulation underlying layer, and the coil layer is formed on the inorganic insulation underlying layer. 6. A thin film magnetic head according to claim 5, wherein the inorganic insulation underlying layer is made of at least one inorganic insulating material of AlO, Al2O3,SiO3,Ta2O3,TiO, AlN, AlSiN, TiN, SiN, Si3N4,NiO, WO, WO3,BN, CrN, SiON, and AlSiO. 7. A thin film magnetic head according to claim 5, wherein the thickness of the inorganic insulation underlying layer is in the range of 0.15 μm to 0.5 μm. 8. A thin film magnetic head according to claim 1, wherein the organic insulation underlying layer is made of a resist or polyimide. 9. A thin film magnetic head according to claim 1, wherein the thickness of the organic insulation underlying layer is in the range of 0.2 μm to 1.0 μm. 10. A thin film magnetic head according to claim 1, wherein the gap between the lower core layer and the coil layer is in the range of 0.35 μm to 1.5 μm. 11. A thin film magnetic head according to claim 1, wherein the upper surfaces of the coil insulation layer and the coil layer are polished surfaces. 12. A thin film magnetic head according to claim 1, wherein the coil insulation layer is made of an inorganic insulating material. 13. A thin film magnetic head according to claim 1, wherein an insulation layer is formed on the coil layer, and a second coil layer is formed on the insulation layer so as to be electrically connected to the coil layer, for inducing a recording magnetic field in the lower core layer, the upper core layer and the recording region. 14. A thin film magnetic head according to claim 1, wherein the recording region comprises a lower pole layer connected directly to the lower core layer, and a gap layer formed on the lower pole layer, an upper pole layer formed on the lower core layer with a gap layer provided therebetween to be connected directly to the upper core layer, or a lower pole layer connected directly to the lower core layer, and an upper pole layer formed on the lower core layer with a gap layer provided ther