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A method for purifying a mixture comprising single-wall carbon nanotubes and amorphous carbon contaminate is disclosed. The method includes the steps of heating the mixture under oxidizing conditions sufficient to remove the amorphous carbon, followed by recovering a product comprising at least abou

A method for purifying a mixture comprising single-wall carbon nanotubes and amorphous carbon contaminate is disclosed. The method includes the steps of heating the mixture under oxidizing conditions sufficient to remove the amorphous carbon, followed by recovering a product comprising at least about 80% by weight of single-wall carbon nanotubes. A method for producing tubular carbon molecules of about 5 to 500 nm in length is also disclosed. The method includes the steps of cutting single-wall nanotube containing-material to form a mixture of tubular carbon molecules having lengths in the range of 5-500 nm and isolating a fraction of the molecules having substantially equal lengths. The nanotubes may be used, singularly or in multiples, in power transmission cables, in solar cells, in batteries, as antennas, as molecular electronics, as probes and manipulators, and in composites.

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A method for purifying a mixture comprising single-wall carbon nanotubes and amorphous carbon contaminate is disclosed. The method includes the steps of heating the mixture under oxidizing conditions sufficient to remove the amorphous carbon, followed by recovering a product comprising at least abou

A method for purifying a mixture comprising single-wall carbon nanotubes and amorphous carbon contaminate is disclosed. The method includes the steps of heating the mixture under oxidizing conditions sufficient to remove the amorphous carbon, followed by recovering a product comprising at least about 80% by weight of single-wall carbon nanotubes. A method for producing tubular carbon molecules of about 5 to 500 nm in length is also disclosed. The method includes the steps of cutting single-wall nanotube containing-material to form a mixture of tubular carbon molecules having lengths in the range of 5-500 nm and isolating a fraction of the molecules having substantially equal lengths. The nanotubes may be used, singularly or in multiples, in power transmission cables, in solar cells, in batteries, as antennas, as molecular electronics, as probes and manipulators, and in composites. ead head described in claim 1 wherein said free layer has a thickness between about 20 and 60 Angstroms. 9. The magnetic read head described in claim 1 wherein said layer of antiferromagnetic material is MnPt, having a thickness between about 80 and 200 Angstroms and there is a layer of Co90Fe10,between about 3 and 5 Angstroms thick, between said MnPt layer and said first layer of any ferromagnetic material. 10. The magnetic read head described in claim 1 wherein said first layer, of any ferromagnetic material, is selected from the group consisting of NiFeCr, NiCr, CoCr, and CoFeCr. 11. The magnetic read head described in claim 1 wherein said read head is a CPP spin valve. 12. The magnetic read head described in claim 11 wherein said CPP spin valve has a GMR ratio of at least 18%. 13. A synthetically pinned CPP SV magnetic read head comprising: a layer of antiferromagnetic material on a seed layer; on said layer of antiferromagnetic material, a first layer, of any ferromagnetic material including alloys, that contains at least 5 atomic percent of vanadium, said first layer being magnetized in a first direction; a layer of chromium on said first layer; on said layer of chromium, a second layer, of cobalt-iron, said second layer being magnetized in a second direction that is anti-parallel to said first direction; on said second layer, a copper spacer layer on which is a free layer of cobalt-iron; and a cap layer on said free layer. 14. The magnetic read head described in claim 13 wherein said layer of antiferromagnetic material has a thickness between about 30 and 200 Angstroms and is selected from the group consisting of MnPt, NiMn, and IrMn. 15. The magnetic read head described in claim 13 wherein said first layer, of any ferromagnetic material including alloys, has a thickness between about 10 and 70 Angstroms. 16. The magnetic read head described in claim 13 wherein said chromium layer has a thickness between about 5 and 15 Angstroms. 17. The magnetic read head described in claim 13 wherein said second layer, of cobalt-iron, has a thickness between about 20 and 50 Angstroms. 18. The magnetic read head described in claim 13 wherein said free layer has a thickness between about 20 and 60 Angstroms. 19. The magnetic read head described in claim 13 wherein said first layer, of any ferromagnetic material, is selected from the group consisting of CoFeV, NiFeV, and FeV. 20. The magnetic read head described in claim 13 wherein said read head is a CPP spin valve. 21. The magnetic read head described in claim 20 wherein said CPP spin valve has a GMR ratio of at least 1.5%. 22. A process to manufacture a synthetically pinned CPP SV magnetic read head, comprising: providing a substrate and depositing thereon a seed layer; depositing a layer of antiferromagnetic material on said seed layer; to a first thickness, depositing on said layer of antiferromagnetic material, a first layer, of any ferromagnetic material including alloys, that contains at least 5 atomic percent of chromium; then magnetizing said first layer in a first direction; depositing a layer of chromium on said first layer; to a second thickness, that is less than said first thickness, depositing, on said layer of chromium, a second layer, of cobalt-iron; on said second layer, depositing a non-magnetic spacer layer and then depositing a free layer of cobalt-iron on said spacer layer; and then depositing a cap layer on said free layer. 23. The process described in claim 22 wherein said seed layer is deposited to a thickness between about 10 and 60 Angstroms and is selected from the group consisting of Ta, NiCr, Ta/NiFe, NiCr/NiFe. 24. The process described in claim 22 wherein said cap layer is deposited to a thickness between about 10 and 200 Angstroms and is selected from the group consisting of Cu and Cu/Ta. 25. The process described in claim 22 wherein said layer of antiferromagnetic material is deposited to a thickness between a