초록 ▼

Gas generant compositions which include at least one transition metal complex of ethylenediamine 5,5'-bitetrazole are provided to produce or results in compositions having relatively high burn rates. Also provided are corresponding or associated gas generating devices and inflatable vehicle occupant

Gas generant compositions which include at least one transition metal complex of ethylenediamine 5,5'-bitetrazole are provided to produce or results in compositions having relatively high burn rates. Also provided are corresponding or associated gas generating devices and inflatable vehicle occupant safety restraint systems and methods of gas generation.

대표청구항 ▼

Gas generant compositions which include at least one transition metal complex of ethylenediamine 5,5'-bitetrazole are provided to produce or results in compositions having relatively high burn rates. Also provided are corresponding or associated gas generating devices and inflatable vehicle occupant

Gas generant compositions which include at least one transition metal complex of ethylenediamine 5,5'-bitetrazole are provided to produce or results in compositions having relatively high burn rates. Also provided are corresponding or associated gas generating devices and inflatable vehicle occupant safety restraint systems and methods of gas generation. rategic jump in germanium and concentration from the buffer side of the interface to the etch-stop material, such that the etch-stop layer is considerably more resistant to the etchant. This process and layer structure allows for an entire range of new materials for microelectronics. The etch-stop capabilities introduce new novel processes and structures such as relaxed SiGe alloys on Si, SiO2,and SiO2/Si. Such materials are useful for future strained Si MOSFET devices and circuits.