초록 ▼

A method for producing bisphenol A in prill form is disclosed. Molten bisphenol is top-fed into a prilling tower via a plate containing a plurality of nozzles. A gas coolant guided through a circuit is led into said tower in a counter flow direction. The prills are cooled to about room temperature,

A method for producing bisphenol A in prill form is disclosed. Molten bisphenol is top-fed into a prilling tower via a plate containing a plurality of nozzles. A gas coolant guided through a circuit is led into said tower in a counter flow direction. The prills are cooled to about room temperature, collected at the bottom of the tower and removed. Also disclosed is the device for carrying out the inventive method and the prills thus produced.

대표청구항 ▼

A method for producing bisphenol A in prill form is disclosed. Molten bisphenol is top-fed into a prilling tower via a plate containing a plurality of nozzles. A gas coolant guided through a circuit is led into said tower in a counter flow direction. The prills are cooled to about room temperature,

A method for producing bisphenol A in prill form is disclosed. Molten bisphenol is top-fed into a prilling tower via a plate containing a plurality of nozzles. A gas coolant guided through a circuit is led into said tower in a counter flow direction. The prills are cooled to about room temperature, collected at the bottom of the tower and removed. Also disclosed is the device for carrying out the inventive method and the prills thus produced. omprises one or a plurality of kinds of materials selected from the group consisting of polyimide, acrylic resin, polyamide, polyimideamide, and benzocylobutene. 3. A semiconductor device according to claim 1, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle-type display, a player using a recording medium, digital camera, and a projector. 4. A semiconductor device comprising: a thin film transistor over a substrate; a capacitor element over the substrate; an insulating film covering the thin film transistor and the capacitor element; a first metal wiring on the insulating film, wherein the first metal wiring is electrically connected to the thin film transistor; a second metal wiring on the insulating film, wherein the second metal wiring is electrically connected to the capacitor element; a pixel electrode over the insulating film, wherein the pixel electrode is electrically connected to the first metal wiring and the second metal wiring; and a resin film between the insulating film and the pixel electrode for alleviating step differences between an edge of the first metal wiring and the insulating film and between an edge of the second metal wiring and the insulating film. 5. A semiconductor device according to claim 4, wherein the resin film comprises one or a plurality of kinds of materials selected from the group consisting of polyimide, acrylic resin, polyamide, polyimideamide, and benzocylobutene. 6. A semiconductor device according to claim 4, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle-type display, a player using a recording medium, digital camera, and a projector. 7. A semiconductor device comprising: a thin film transistor over a substrate; a first insulating film covering the thin film transistor; a metal wiring on the first insulating film, wherein the metal wiring is electrically connected to the thin film transistor; a pixel electrode over the first insulating film, wherein the pixel electrode is electrically connected to the metal wiring; and a second insulating film in contact with a sidewall portion of the metal wiring, wherein the second insulating film is interposed between the pixel electrode and the first insulating film, and has a curved surface at the sidewall portion of the metal wiring. 8. A semiconductor device according to claim 7, wherein the second insulating film comprises one or a plurality of kinds of materials selected from the group consisting of polyimide, acrylic resin, polyamide, polyimideamide, and benzocylobutene. 9. A semiconductor device according to claim 7, wherein a concentration of the second insulating film is 3 to 20% of that of the first insulating film. 10. A semiconductor device according to claim 7, wherein the semiconductor device is at least one selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggle-type display, a player using a recording medium, digital camera, and a projector. 11. A semiconductor device comprising: a thin film transistor over a substrate; a capacitor element over the substrate; a first insulating film covering the thin film transistor and the capacitor element; a first metal wiring on the first insulating film, wherein the first metal wiring is electrically connected to the thin film transistor; a second metal wiring on the first insulating film, wherein the second metal wiring is electrically connected to the capacitor element; a pixel electrode over the first insulating film, wherein the pixel electrode is electrically connected to the first metal wiring and the second metal wiring; and a second insulating film in contact with sidewall portions of the first metal wiring and the second metal wiring, wherein the second insulating film is interposed between the first insu