초록 ▼

A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is formed in a single growth step, and therefore do

A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is formed in a single growth step, and therefore does not require processing steps for depositing, patterning, and etching growth masks. A Group III metal source vapor is produced by sputtering a target, for combination with nitrogen supplied from a nitrogen-containing source gas. The III/V ratio is adjusted or controlled to create a Group III metal-rich environment within the reaction chamber conducive to preferential column growth. The reactant vapor species are deposited on the growth surface to produce single-crystal MIIIN columns thereon. The columns can be employed as a strain-relieving platform for the growth of continuous, low defect-density, bulk materials. Additionally, the growth conditions can be readjusted to effect columnar epitaxial overgrowth, wherein coalescence of the Group III nitride material occurs at the tops of the columns, thereby forming a substantially continuous layer upon which additional layers can be deposited. The intervening presence of the column structure mitigates thermal mismatch stress between substrates, films, or other layers above and below the columns. A high deposition rate sputter method utilizing a non-thermionic electron/plasma injector assembly is provided to carrying out one or more of the growth steps.

대표청구항 ▼

A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is formed in a single growth step, and therefore do

A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is formed in a single growth step, and therefore does not require processing steps for depositing, patterning, and etching growth masks. A Group III metal source vapor is produced by sputtering a target, for combination with nitrogen supplied from a nitrogen-containing source gas. The III/V ratio is adjusted or controlled to create a Group III metal-rich environment within the reaction chamber conducive to preferential column growth. The reactant vapor species are deposited on the growth surface to produce single-crystal MIIIN columns thereon. The columns can be employed as a strain-relieving platform for the growth of continuous, low defect-density, bulk materials. Additionally, the growth conditions can be readjusted to effect columnar epitaxial overgrowth, wherein coalescence of the Group III nitride material occurs at the tops of the columns, thereby forming a substantially continuous layer upon which additional layers can be deposited. The intervening presence of the column structure mitigates thermal mismatch stress between substrates, films, or other layers above and below the columns. A high deposition rate sputter method utilizing a non-thermionic electron/plasma injector assembly is provided to carrying out one or more of the growth steps. id-addition salts thereof. 43. The ready-to-use composition according to claim 41 wherein said at least one coupler is present in an amount ranging from 0.0001 to 10% by weight relative to the total weight of the composition. 44. The ready-to-use composition according to claim 39, wherein said acid-addition salts are chosen from hydrochloride, hydrobromides, sulphates, tartrates, lactates and acetates. 45. The ready-to-use composition according to claim 42, wherein said acid-addition salts are chosen from hydrochlorides, hydrobromides, sulphates, tartrates, lactates and acetates. 46. The ready-to-use composition according to claim 38, further comprising at least one direct dye. 47. A ready-to-use composition for oxidation dyeing of keratin fibers comprising: (a) at least one enzyme of 2-electron oxidoreductase type, chosen from pyranose oxidases, glucose oxidases, glycerol oxidases, lactate oxidases, pyruvate oxidases, and uricases; and (b) at least one donor for said at least one enzyme, chosen from D-glucose, L-sorbose, D-xylose, glycerol, dihydroxyacetone, lactic acid and its salts, pyruvic acid and its salts, and uric acid and its salts; (c) at least one nonionic fatty sucronamide chosen from: N-substituted aldonamides chosen from: (i) N-alkyl lactobionamides N-alkyl maltobionamides N-alkyl cellobionamides, N-alkyl mellibionamides and N-alkyl gentiobionamides; which are monosubstituted or disubstituted with: linear and branched, saturated and unsaturated aliphatic hydrocarbon-based groups which may contain heteroatoms, aromatic hydrocarbon-based groups, and cycloaliphatic groups; (ii) amino acid esters chosen from N-lactobionyl, N-maltobionyl, N-mellibionyl, N-cellobionyl, and N-gentiobionyl amino acid esters, wherein the amino acids are chosen from alanine, valine, glycine, lysine, leucine, arginine, aspartic acid, glutamic acid, threonine, serine, cysteine, histidine, tyrosine, methionine, β-alanine, sarcosine, y-aminobutyric acid, ornithine, and citruline, said amino acid esters being monosubstituted with groups of formula: wherein R is chosen from aliphatic hydrocarbon-based groups which comprise from 1 to 36 carbon atoms and n is an integer greater than 1; (iii) N-(alkyloxy)alkyl-lactobionamides which are monosubstituted or disubstituted with groups --(CH2)nOR' wherein n is an integer greater than 1 and R' chosen from linear and branched, saturated and unsaturated aliphatic hydrocarbon-based groups which may contain heteroatoms, aromatic hydrocarbon-based groups, and cycloaliphatic groups; (iv) N-(polyalkyloxy)alkyl lactobionamides, N-(polyalkyloxy)alkyl maltobionamides, N-(polyalkyloxy)alkyl cellobionamides, N-(polyalkyloxy)alkyl mellibionamides and N-(polyalkyloxy)alkyl gentiobionamides; which are monosubstituted or disubstituted with groups --R1-(OR1)nR1R2whe