이 특허에 인용된 특허 (434)

1. Berger Josef (Santa Clara CA) Kagan Yishai (Sunnyvale CA) Mick Doron (Sunnyvale CA) Nazarathy Moshe (Palo Alto CA), Active alignment system for laser to fiber coupling.

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2. Qureshi Shahid U. H. (Natick MA) Seitz Karl W. (Norfolk MA) Wilson Robert M. (Walpole MA), Adaptive communication rate modem.

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3. Yu Zhiyi ; Wang Jun ; Droopad Ravindranath ; Marshall Daniel S. ; Hallmark Jerald A. ; Abrokwah Jonathan K., Alkaline-earth metal silicides on silicon.

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4. Parkin Stuart Stephen Papworth ; Samant Mahesh Govind, Antiferromagnetically exchange-coupled structure for magnetic tunnel junction device.

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5. Gary W. Grube, Apparatus and method for effecting communications among a plurality of remote stations.

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6. King David A. ; Sampas Nicholas ; Schembri Carol T., Apparatus and method with tiled light source array for integrated assay sensing.

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7. Jin Sungho (Millington NJ) McCormack Mark T. (Summit NJ) Ramesh Ramamoorthy (Tinton Falls NJ), Article comprising magnetoresistive material.

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8. Ramesh Ramamoorthy, Barrier layer for ferroelectric capacitor integrated on silicon.

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9. Guenzer Charles S. (3852 Grove Ave. Palo Alto CA 94303), Bismuth titanate as a template layer for growth of crystallographically oriented silicon.

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10. Ortel William G., Broad band optical fiber telecommunications network.

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11. Fork David K. ; Boyce James B. ; Mei Ping ; Ready Steve ; Johnson Richard I. ; Anderson Greg B., Buffered substrate for semiconductor devices.

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12. Ella Juha,FIX, Bulk acoustic wave (BAW) filter having a top portion that includes a protective acoustic mirror.

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13. Ramesh Ramamoorthy (Tinton Falls NJ), C-axis perovskite thin films grown on silicon dioxide.

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14. McKee Rodney Allen ; Walker Frederick Joseph, CaTiO.sub.3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films.

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15. Kao Yung-Chung (Dallas TX) Plumton Donald L. (Dallas TX), Capped anneal.

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16. Jou Dong-Chaung (Simi Valley CA) Lii Ching-Jong (Monrovia CA) Chen Bor-Uei (Studio City CA), Cascaded recirculating transmission line without bending loss limitations.

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17. Sengupta Louise (Woburn MA) Ngo Eric (Brighton MA) Stowell Steven (Jamaica Plain MA) O\Day Michelina (Andover MA) Lancto Robert (Wakefield MA), Ceramic ferroelectric composite material - BSTO-MgO.

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18. Sengupta Louise (Warwick MD), Ceramic ferroelectric composite material-BSTO-ZnO.

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19. Beecher Jody E. ; Goldberg Martin J. ; McGall Glenn H., Chemical amplification for the synthesis of patterned arrays.

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20. Wernberg Alex A. (Rochester NY) Gysling Henry J. (Rochester NY), Chemical vapor deposition of metal oxide films.

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21. Grigorian Leonid ; Eklund Peter ; Fang Shaoli, Clathrate structure for electronic and electro-optic applications.

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22. Ozaki Masaharu (Yokohama JPX) Yonehara Takao (Atsugi JPX), Complementary MOS integrated circuit device.

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23. Abrokwah Jonathan K. (Tempe AZ) Wu Schyi-Yi (Mesa AZ) Huang Jenn-Hwa (Gilbert AZ), Complementary heterojunction field effect transistor with an anisotype N+gate for P-channel devices.

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24. Baca Albert G. (Albuquerque NM) Drummond Timothy J. (Albuquerque NM) Robertson Perry J. (Albuquerque NM) Zipperian Thomas E. (Albuquerque NM), Complementary junction heterostructure field-effect transistor.

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25. Robert L. Thornton ; Christopher L. Chua, Compliant substrates for growing lattice mismatched films.

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26. Lo Yu-Hwa, Compliant universal substrate for epitaxial growth.

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27. Nashimoto Keiichi (Minami-ashigara JPX), Composite optical modulator.

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28. Ohori Tatsuya,JPX, Compound semiconductor device constructed on a heteroepitaxial substrate.

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29. Ohori Tatsuya (Kawasaki JPX) Fukuzawa Kanae (Kawasaki JPX), Compound semiconductor device on silicon substrate and method of manufacturing the same.

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30. Moon Seung H. (Seoul KRX) Yoon Yung S. (Seoul KRX), Compound semiconductor device with bipolar transistor and laser diode.

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31. Cook Phillip D. (San Marcos CA) Teng Kelly (San Diego CA), Conjugated 4′-desmethyl nucleoside analog compounds.

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32. Conrad Wayne Ernest,CAX, Construction of a vacuum cleaner head.

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33. McKee Rodney A. ; Walker Frederick J., Control method and system for use when growing thin-films on semiconductor-based materials.

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34. Fitzgerald Eugene A., Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization.

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35. Yamakido Kazuo (Hinode JPX) Kobayashi Yoichiro (Ohme JPX) Otsuka Masanori (Kokubunji JPX) Okazaki Takao (Hamura JPX) Ishihara Yukihito (Ohme JPX) Nishikawa Norimitsu (Ohme JPX) Tamba Yuko (Ohme JPX), Converter, offset adjustor, and portable communication terminal unit.

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36. Krivokapic Zoran, Convex device with selectively doped channel.

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37. Dijaili Sol P. (Moraga CA) Patterson Frank G. (Livermore CA) Deri Robert J. (Pleasanton CA), Cross-talk free, low-noise optical amplifier.

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38. Inam Arun (Red Bank NJ) Ramesh Ramamoorthy (Eatontown NJ), Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovski.

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39. Guenzer Charles S. (3852 Grove Ave. Palo Alto CA 94303), Crystallographically oriented growth of silicon over a glassy substrate.

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40. Ramesh Ramamoorthy (Tinton Falls NJ), Cubic metal oxide thin film epitaxially grown on silicon.

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41. Inoue Naoya,JPX ; Hayashi Yoshihiro,JPX, DC magnetron sputtering method for manufacturing electrode of ferroelectric capacitor.

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42. Gustafson Eric K. (Palo Alto CA) Trebino Rick (Livermore CA) Lee John (Cupertino CA), Diffraction immunoassay apparatus and method.

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43. Narayan Jagdish (Raleigh NC) Fan John C. C. (Chestnut Hill MA), Dislocation density reduction in gallium arsenide on silicon heterostructures.

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44. Desu Seshu B. ; Pan Wei, Dry etching of layer structure oxides.

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45. Paoli Thomas L. (Los Altos CA) Bour David P. (Cupertino CA), Dual polarization laser diode with quaternary material system.

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46. Reinhart Franz K. (Summit NJ), Electro-optic polarization modulation in multi-electrode waveguides.

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47. Montgomery Donald D., Electrochemical solid phase synthesis.

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48. Summerfelt Scott R. (Dallas TX) Beratan Howard R. (Dallas TX), Electrodes comprising conductive perovskite-seed layers for perovskite dielectrics.

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49. Klee Mareike K.,DEX ; Brand Hans-Wolfgang,DEX ; Jungk Hans-Otto,DEX, Electronic component and method of manufacturing same.

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50. Knapp James H. ; Carney Francis J. ; Norton Laura J., Electronic component for aligning a light transmitting structure.

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51. Kashihara Keiichiro (Hyogo JPX) Okudaira Tomonori (Hyogo JPX) Itoh Hiromi (Hyogo JPX), Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer.

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52. Speidell James L. ; Ziegler James F., Encapsulated MEMS band-pass filter for integrated circuits.

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53. Fraden Jacob ; Brown Joseph P. ; Lackey Robert P. ; Howe Randall R. ; Bultges Heinz,DEX ; Debus Wolfram,DEX ; Bautz Gunther,DEX ; Franke Helmut,DEX, Enhanced protective lens cover for an infrared thermometer.

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54. Manasevit Harold M. (Anaheim CA), Epitaxial composite and method of making.

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55. Umeno Masayoshi (Nagoya JPX) Sakai Shiro (Nagoya JPX) Yahagi Shinichiro (Ohbu JPX), Epitaxial gallium arsenide semiconductor on silicon substrate with gallium phosphide and superlattice intermediate layer.

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56. Fork David K. (Palo Alto CA), Epitaxial magnesium oxide as a buffer layer on (111) tetrahedral semiconductors.

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57. Jia Quanxi, Epitaxial oxides on amorphous SiO.sub.2 on single crystal silicon.

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58. Murasato Shigetaka,JPX, Epitaxial wafer for AlGaInP light-emitting diode.

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59. King David A. (Palo Alto CA) Seher Jens-Peter (Stuttgart DEX), Evanescent scanning of biochemical array.

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60. Summerfelt Scott R., Fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer.

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61. Kondow Masahiko,JPX ; Uomi Kazuhisa,JPX ; Nakamura Hitoshi,JPX, Fabrication method for AlGaIn NPAsSb based devices.

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62. Monica K. Davis ; Michel J. F. Digonnet, Fast, environmentally-stable fiber switches using a Sagnac interferometer.

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63. Vinal Albert W. (Cary NC), Fermi threshold field effect transistor.

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64. Ramesh Ramamoorthy (Tinton Falls NJ), Ferroelectric capacitor heterostructure and method of making same.

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65. Chivukula Vasanta,CAX ; Leung Pak K., Ferroelectric dielectric for integrated circuit applications at microwave frequencies.

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66. Gotoh Kohtaroh (Kawasaki JPX) Tamura Hirotaka (Kawasaki JPX) Yoshida Akira (Kawasaki JPX), Ferroelectric memory device.

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67. Koo Bon-jae,KRX, Ferroelectric memory devices having well region word lines and methods of operating same.

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68. Ooms William J. ; Marshall Daniel S. ; Hallmark Jerald A., Ferroelectric semiconductor device having a layered ferroelectric structure.

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69. Uchida Hiroto ; Soyama Nobuyuki ; Ogi Katsumi,JPX ; Scott Michael C.,AUX ; Cuchiaro Joseph D. ; McMillan Larry D. ; Paz de Araujo Carlos A., Ferroelectric/high dielectric constant integrated circuit and method of fabricating same.

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70. Regener Rolf (Schorndorf DEX), Fiber-optic gyroscope integrated on a silicon substrate.

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71. Watanabe Yukio (Machida JPX), Field-effect transistor with perovskite oxide channel.

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72. Wadaka Shusou,JPX ; Misu Koichiro,JPX ; Nagatsuka Tsutomu,JPX ; Kimura Tomonori,JPX ; Kameyama Shunpei,JPX ; Maeda Chisako,JPX ; Yamada Akira,JPX ; Honda Toshihisa,JPX, Film bulk acoustic wave device.

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73. Yano Yoshihiko,JPX ; Noguchi Takao,JPX, Film structure, electronic device, recording medium, and process of preparing ferroelectric thin films.

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74. Thomas E. Raymond (Dayton OH) Cahill Lysle D. (Dayton OH) Marshall William W. (Xenia OH) Talley Luke L. (Centerville OH) Lawson John A. (Dayton OH) Wilcox Brian N. (Kettering OH), Flat bed scanner system and method.

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75. Andrews James A. (Phoenix AZ), Flip chip package and method of making.

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76. Kencke David L. ; Banerjee Sanjay K., Floating gate transistor having buried strained silicon germanium channel layer.

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77. Shahan Van B. (Austin TX) Harvey Paul E. (Austin TX) Huntsman Clayton D. (Brandon FL) Someshway Ashok H. (Austin TX), Floating point numeric data processor.

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78. Harada Toshiaki (Iwakuni JPX) Hiramatsu Toshiyuki (Iwakuni JPX) Yamaji Teizo (Iwakuni JPX), Fluorescent composition having the ability to change wavelengths of light, shaped article of said composition as a light.

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79. Nghiem David, Folded quarter-wave patch antenna.

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80. Northrup John E. ; Romano Linda T. ; Bringans Ross D., Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities.

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81. Usui Akira,JPX ; Sakai Akira,JPX ; Sunakawa Haruo,JPX ; Mizuta Masashi,JPX ; Matsumoto Yoshishige,JPX, GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor.

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82. Shakuda Yukio,JPX, GaN semiconductor light emitting device having a group III-V substrate.

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83. Vaudo Robert P. ; Redwing Joan M. ; Tischler Michael A. ; Brown Duncan W., GaN-based devices using (Ga, AL, In)N base layers.

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84. Hovel Harold J. (Katonah NY) Rosenberg Robert (Peekskill NY), Gallium aluminum arsenide integrated circuit structure using germanium.

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85. Tadatomo Kazuyuki,JPX ; Watabe Shinichi,JPX ; Okagawa Hiroaki,JPX ; Hiramatsu Kazumasa,JPX, Gan single crystal.

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86. Kizilyalli Isik C. ; Ma Yi ; Merchant Sailesh Mansinh ; Roy Pradip Kumar, Gate structure for integrated circuit fabrication.

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87. McKee Rodney A. ; Walker Frederick J. ; Chisholm Matthew F., Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate.

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88. Schultz Peter G. ; Xiang Xiaodong ; Goldwasser Isy, Giant magnetoresistive cobalt oxide compounds.

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89. Chang Winston K. (Fair Haven NJ) Yi-Yan Alfredo (Eatontown NJ), Grafted-crystal-film integrated optics and optoelectronic devices.

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90. Shi Song Q. (Phoenix AZ), Green-emitting organometallic complexes for use in light emitting devices.

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91. Matthews ; decreased John W. (late of Ossining NY by Valerie A. Matthews ; executrix) Stobbs William M. (Cambridge GB2), Growing epitaxial films when the misfit between film and substrate is large.

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92. Abrokwah Jonathan K. (Tempe AZ) Lucero Rodolfo (Scottsdale AZ) Rollman Jeffrey A. (Phoenix AZ), HIGFET and method.

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93. Manchester Kenneth E. (Princeton MA), Hall sensor with integrated pole pieces.

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94. Kay Robert E. (Newport Beach CA) Chan Hakchill (Corona del Mar CA) Ju Fred (Huntington Beach CA) Bray Burton A. (Laguna Niguel CA), HcCdTe epitaxially grown on crystalline support.

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95. Terranova Nancy (Wilmington DE) Barnett Allen M. (Newark DE), Hetero-epitaxial growth of non-lattice matched semiconductors.

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96. Kitahara Kuninori (Zama JPX) Ohtsuka Nobuyuki (Atsugi JPX) Ozeki Masashi (Yokohama JPX), Hetero-epitaxially grown compound semiconductor substrate.

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97. Marx Diethard,JPX ; Kawazu Zempei,JPX ; Hayafuji Norio,JPX, Heteroepitaxial semiconductor device including silicon substrate, GaAs layer and GaN layer #13.

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98. Takahashi Tsuyoshi (Kawasaki JPX) Yamada Hiroshi (Kawasaki JPX) Joshin Kazukiyo (Kawasaki JPX) Sasa Shigehiko (Hirakata JPX), Heterojunction bipolar semiconductor device and its manufacturing method.

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99. Shen Jun (Phoenix AZ) Tsui Raymond K. (Phoenix AZ) Tehrani Saied N. (Scottsdale AZ) Goronkin Herb (Tempe AZ), Heterojunction interband tunnel diodes with improved P/V current ratios.

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100. Morkoc Hadis (Urbana IL) Fischer Russ (Urbana IL), Heterojunction semiconductor device with <001>tilt.

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101. Abrokwah Jonathan K. (Tempe AZ) Huang Jenn-Hwa (Gilbert AZ) Ooms William J. (Chandler AZ) Shurboff Carl L. (Grayslake IL) Hallmark Jerald A. (Gilbert AZ), Heterostructure field effect device having refractory ohmic contact directly on channel layer and method for making.

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102. Minghwei Hong ; Ahmet Refik Kortan ; Jueinai Raynien Kwo ; Joseph Petrus Mannaerts, High dielectric constant gate oxides for silicon-based devices.

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103. Onda Kazuhiko,JPX, High electron mobility transistor with an improved interface between donor and schottky layers.

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104. Brunel Dominique,FRX ; Trichet Jacques,FRX, High frequency amplifier and control.

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105. Bell David Allen ; Taur Roger Rong ; Delacueva Jess, High performance vehicle radar system.

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106. Summerfelt Scott R. (Dallas TX), High-dielectric constant oxides on semiconductors using a Ge buffer layer.

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107. Reedy Ronald E. (San Diego CA) Burgener Mark L. (San Diego CA), High-frequency wireless communication system on a single ultrathin silicon on sapphire chip.

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108. Lu Chung Hsin,TWX, High-pressure process for crystallization of ceramic films at low temperatures.

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109. Goossen Keith Wayne ; Walker James A., Hybrid chip and method therefor.

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110. Prueitt Melvin L. (161 Cascabel Los Alamos NM 87544), Hydro-air renewable power system.

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111. Meunier Paul L. (Orsay FRX) Razeghi Manijeh (Orsay FRX), III-V Compound heteroepitaxial 3-D semiconductor structures utilizing superlattices.

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112. Major Jo S. (San Jose CA) Welch David F. (Menlo Park CA) Scifres Donald R. (San Jose CA), III-V aresenide-nitride semiconductor materials and devices.

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113. Kovacs Gregory T. A. ; Knapp Terry R.,CHX, Implantable biosensing transponder.

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114. Gerald R. Dietze, In-situ post epitaxial treatment process.

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115. Horikawa Hideaki (Tokyo JPX) Akiyama Masahiro (Tokyo JPX), InP semiconductor thin film on Si.

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116. Nghiem David, Increased bandwidth patch antenna.

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117. Vo-Dinh Tuan ; Wintenberg Alan ; Ericson Milton N., Integrated circuit biochip microsystem containing lens.

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118. Stengel Robert E. (Ft. Lauderdale FL), Integrated distributed inductive-capacitive network.

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119. Robert J. Higgins, Jr. ; Robert E. Stengel, Integrated gallium arsenide communications systems.

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120. Schetzina Jan Frederick (Cary NC), Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride.

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121. Schetzina Jan Frederick (Cary NC), Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitrid.

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122. Schetzina Jan Frederick, Integrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum well.

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123. Nakamura Masaru (Kawaguchi JPX), Integrated optical and electric circuit device.

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124. Wickham Michael G., Integrated optical time delay unit.

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125. Tham J. L. Julian ; Mehrotra Deepak ; Bartlett James L. ; Chang Mau Chung F. ; Marcy ; 5th Henry O. ; Pedrotti Kenneth D. ; Pehlke David R. ; Seabury Charles W. ; Yao Jun J., Integrated passive transceiver section.

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126. Kulick John D. (Pittstown NJ), Integrated quantum well feedback structure.

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127. Lessin Arlen R. (New York NY) Gruppuso Frank M. (Commack NY) Harrison Shelley A. (Dix Hills NY), Intelligent portable interactive personal data system.

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128. Stefik Mark J. (Woodside CA) Bobrow Daniel G. (Palo Alto CA) Card Stuart K. (Los Altos CA) Casey Michalene M. (Morgan Hill CA) Goldstein Richard J. (San Francisco CA) Lamming Michael G. (Cambridge CA, Interactive contents revealing storage device.

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129. Taddiken Albert H. (Dallas TX), Interface circuit operable to perform level shifting between a first type of device and a second type of device.

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130. Ma Tso-Ping (Branford CT), Isotopically enriched semiconductor devices.

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131. Ma Tso-Ping (Branford CT), Isotopically enriched semiconductor devices.

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132. Newns Dennis Merton, Junction mott transition field effect transistor (JMTFET) and switch for logic and memory applications.

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133. Trinh Trang N. (Cypress CA) Smith ; Jr. Elroy C. (La Habra CA), Large array MMIC feedthrough.

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134. Pirrung Michael C. (Durham NC) Read J. Leighton (Palo Alto CA) Fodor Stephen P. A. (Palo Alto CA) Stryer Lubert (Stanford CA), Large scale photolithographic solid phase synthesis of polypeptides and receptor binding screening thereof.

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135. Plesko George A., Laser based PCMCIA data collection system with automatic triggering for portable applications and method of use.

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136. Holton ; William C., Laser for integrated optical circuits.

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137. Andringa Keimpe (Sherborn MA), Laser gyroscope.

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138. Smith Irl W. (Newton MA) Dorschner Terry A. (Newton MA), Laser gyroscope system.

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139. Lorenzo Joseph P. (Stow MA) Soref Richard A. (Newton MA), Lattice mismatched hetrostructure optical waveguide.

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140. Laibowitz Robert Benjamin ; Shaw Thomas McCarroll, Lead silicate based capacitor structures.

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141. Laibowitz Robert Benjamin ; Shaw Thomas McCarroll, Lead silicate based capacitor structures.

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142. Yoshida Susumu (Itami JPX), Light-electricity conversion semiconductor device.

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143. Katsuhide Manabe JP; Akira Mabuchi JP; Hisaki Kato JP; Michinari Sassa JP; Norikatsu Koide JP; Shiro Yamazaki JP; Masafumi Hashimoto JP; Isamu Akasaki JP, Light-emitting semiconductor device using gallium nitride group compound.

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144. MacLeod Cheryl A., Lightfast inks for ink-jet printing.

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145. Yonehara Takao,JPX ; Miyawaki Mamoru,JPX ; Ishizaki Akira,JPX ; Hoshi Junichi,JPX ; Sakamoto Masaru,JPX ; Sugawa Shigetoshi,JPX ; Inoue Shunsuke,JPX ; Koizumi Toru,JPX ; Kohchi Tetsunobu,JPX ; Sakagu, Liquid crystal image display unit and method for fabricating semiconductor optical member.

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146. Stauf Gregory T. ; Roeder Jeffrey F. ; Baum Thomas H., Liquid delivery MOCVD process for deposition of high frequency dielectric materials.

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147. Delcoco Robert J. (Columbia MD) Kroeger Brian W. (Ellicott City MD) Kurtz John J. (Catonsville MD), Local area network with star topology and ring protocol.

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148. Chen Eugene ; Durlam Mark ; Tehrani Saied N., Low switching field magnetoresistive tunneling junction for high density arrays.

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149. Stacy Robert A. (St. Louis County MO) Rice Robert R. (Florissant MO), Low voltage electro-optic modulator.

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150. Sun Jonathan Zanhong ; Gupta Arunava ; Xiao Gang ; Trouilloud Philip Louis ; Lecoeur Philippe P.,FRX, Magnetic devices and sensors based on perovskite manganese oxide materials.

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151. Farb Joseph E. (Riverside CA), Magnetic field detection.

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152. Partin Dale Lee, Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer.

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153. Partin Dale L. (Ray MI) Heremans Joseph P. (Troy MI) Green Louis (Rochester Hills MI), Magnetic field sensor on elemental semiconductor substrate with electric field reduction means.

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154. Zanio Ken (El Toro CA) Bean Ross C. (Santa Ana CA), Manufacture of monolithic infrared focal plane arrays.

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155. Fischer Michael A. (San Antonio TX), Medium access control protocol for wireless network.

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156. Koganei Akio,JPX ; Nishimura Naoki,JPX, Memory device utilizing giant magnetoresistance effect.

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157. Gardner Mark I. ; Gilmer Mark C., Metal silicide transistor gate spaced from a semiconductor substrate by a ceramic gate dielectric having a high dielectric constant.

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158. Hayashi Shigenori (Nara JPX) Komaki Kazuki (Osaka JPX) Kamada Takeshi (Osaka JPX) Kitagawa Masatoshi (Osaka JPX) Deguchi Takashi (Shiga JPX) Takayama Ryoichi (Osaka JPX) Hirao Takashi (Osaka JPX), Method and apparatus for fabrication of dielectric thin film.

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159. Nevill Leland R., Method and apparatus for identifying integrated circuits.

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160. Yamashita Youji (Shizuoka JPX), Method and apparatus for manufacturing semi-insulation GaAs monocrystal.

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161. Joshi Abhay M. (Plainsboro NJ), Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy.

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162. Falk Robert A. (Louisville CO) Phillis Gary L. (Boulder CO), Method and apparatus for optically measuring distance and velocity.

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163. Smith Doran D. (Brick NJ), Method and apparatus for performing internal device structure analysis of a dual channel transistor by multiple-frequenc.

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164. H. Sprague Ackley, Method and apparatus for utilizing specular light to image low contrast symbols.

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165. Haartsen Jacobus,SEX, Method and arrangement for radio communication.

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166. Cook Robert K. (Poughkeepsie) Knepper Ronald W. (Lagrangeville) Kulkarni Subodh K. (Fishkill) Lange Russell C. (Newburgh) Ronsheim Paul A. (Wappingers Falls) Subbanna Seshadri (Hopewell Junction) Tej, Method for controlling interfacial oxide at a polycrystalline/monocrystalline silicon interface.

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167. Yi Zhiyi ; Droopad Ravindranath ; Overgaard Corey Daniel ; Ramdani Jamal ; Curless Jay A. ; Hallmark Jerald A. ; Ooms William J. ; Wang Jun, Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon.

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168. Yu Zhiyi ; Droopad Ravindranath ; Overgaard Corey Daniel ; Ramdani Jamal ; Curless Jay A. ; Hallmark Jerald A. ; Ooms William J. ; Wang Jun, Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon.

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169. Yu Zhiyi ; Wang Jun ; Droopad Ravindranath ; Ramdani Jamal, Method for fabricating a semiconductor structure having a stable crystalline interface with silicon.

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170. Lebby Michael S. (Chandler AZ) Norman Michael P. (Chandler AZ), Method for fabricating an angled diffraction grating.

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171. Lee Ming-Tsan,TWX ; Liu Chuan H.,TWX ; Fu Kuan-Yu,TWX, Method for fabricating an oxide layer on silicon with carbon ions introduced at the silicon/oxide interface in order to reduce hot carrier effects.

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172. So Sang Mun,KRX, Method for fabricating silicon-on-insulator wafer.

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173. Yano Yoshihiko,JPX ; Noguchi Takao,JPX ; Nagano Katsuto,JPX, Method for forming oxide thin film and the treatment of silicon substrate.

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174. Nakato Tatsuo, Method for forming silicon-germanium/Si/silicon dioxide heterostructure using germanium implant.

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175. McGinn Joseph T. (Flemington NJ) Jastrzebski Lubomir L. (Plainsboro NJ) Corboy ; Jr. John F. (Ringoes NJ), Method for growing a low defect monocrystalline layer on a mask.

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176. Yanjun Ma ; Yoshi Ono, Method for improving electrical properties of high dielectric constant films.

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177. Guldi Richard L. (Dallas TX), Method for improving gate oxide integrity using low temperature oxidation during source/drain anneal.

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178. Ooms William J. ; Marshall Daniel S. ; Hallmark Jerald A., Method for making a ferroelectric semiconductor device and a layered structure.

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179. Suh Jeong-Dae,KRX ; Sung Gun-Yong,KRX, Method for making a superconducting field-effect device with grain boundary channel.

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180. Hbert Francois (Sunnyvale CA), Method for producing a fully walled emitter-base structure in a bipolar transistor.

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181. Ichikawa Takeshi (Zama JPX) Yonehara Takao (Atsugi JPX) Sakamoto Masaru (Atsugi JPX) Naruse Yasuhiro (Aiko JPX) Nakayama Jun (Atsugi JPX) Yamagata Kenji (Kawasaki JPX) Sakaguchi Kiyofumi (Atsugi JPX), Method for producing semiconductor articles.

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182. Sakaguchi Kiyofumi (c/o Canon Kabushiki Kaisha 30-2 ; 3-chome Shimomaruko ; Ohta-ku ; Tokyo JPX) Yonehara Takao (c/o Canon Kabushiki Kaisha 30-2 ; 3-chome Shimomaruko ; Ohta-ku ; Tokyo JPX) Nishida S, Method for producing semiconductor device substrate by bonding a porous layer and an amorphous layer.

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183. Bisaro Ren (Saint Maur des Fosses FRX) Friederich Alain (Paris FRX), Method for the manufacture, by epitaxy, of monocrystalline layers of materials with different lattice parameters.

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184. Goesele Ulrich M. ; Tong Qin-Yi, Method for the transfer of thin layers monocrystalline material onto a desirable substrate.

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185. Sugiyama Haruo,JPX ; Inoue Kazushi,JPX, Method of detecting solid cancer cells and tissue atypia and method of testing tissues for use in bone marrow transplantation and peripheral blood stem cell transplantation.

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186. Shastry Shambhu K. (Framingham MA), Method of epitaxially growing compound semiconductor materials.

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187. Kizuki Hirotaka,JPX, Method of fabricating a semiconductor device and method of cleaning a crystalline semiconductor surface.

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188. Ramdani Jamal ; Droopad Ravindranath ; Yu Zhiyi, Method of fabricating a semiconductor structure including a metal oxide interface.

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189. Summerfelt Scott R. (Dallas TX), Method of fabricating high-dielectric constant oxides on semiconductors using a GE buffer layer.

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190. Abrokwah Jonathan K. ; Droopad Ravi ; Overgaard Corey D. ; Bowers Brian ; LaMacchia Michael P. ; Bernhardt Bruce A., Method of fabricating submicron FETs with low temperature group III-V material.

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191. Kanber Hilda (Rolling Hills Estates CA), Method of fabricating three dimensional gallium arsenide microelectronic device.

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192. Itoh Kenji (Kanagawa JPX), Method of forming a carbon film on a substrate made of an oxide material.

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193. Eshita Takashi (Inagi JPX) Mieno Fumitake (Kawasaki JPX) Furumura Yuji (Kawasaki JPX) Watanabe Takuya (Sagamihara JPX), Method of forming a heteroepitaxial semiconductor thin film using amorphous buffer layers.

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194. Mooney John B. (San Jose CA) Sher Arden (San Carlos CA), Method of forming a low dislocation density semiconductor device.

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195. Seon Jeong-Min,KRX ; Kim Hwan-Myeong,KRX, Method of forming a perovskite structure semiconductor capacitor.

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196. Seon Jeong-Min,KRX ; Kim Hwan-Myeong,KRX, Method of forming a perovskite structure semiconductor capacitor.

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197. Droopad Ravi ; Abrokwah Jonathan K. ; Passlack Matthias ; Yu Zhiyi Jimmy, Method of forming a silicon nitride layer.

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198. Seabaugh Alan C. ; Kao Yung Chung ; Purdes Andrew J. ; Randall John N., Method of forming lateral resonant tunneling devices.

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199. Belt Roger F. (Morristown NJ) Ings John B. (Boonton NJ), Method of forming oxidic high Tc superconducting materials on substantially lattice matched monocrystallin.

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200. Inoue Yasunori (Osaka JPX) Hanafusa Hiroshi (Hirakata JPX), Method of forming single crystalline magnesia spinel film.

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201. Ramdani Jamal ; Lebby Michael S. ; Holm Paige M., Method of growing gallium nitride on a spinel substrate.

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202. Wilk Glen D. ; Anthony John M., Method of growing high-quality crystalline silicon quantum wells for RTD structures.

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203. Kiyoku Hiroyuki,JPX ; Nakamura Shuji,JPX ; Kozaki Tokuya,JPX ; Iwasa Naruhito,JPX ; Chocho Kazuyuki,JPX, Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device.

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204. Pitt Gillies D. (Saffron Walden GB2) Greene Peter D. (Harlow GB2) Thrush Edward J. (Stansted Mountfitchet GB2) Whysall David H. (Harlow GB2), Method of making a Hall effect device.

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205. Abrokwah Jonathan K. (Tempe AZ) Huang Jenn-Hwa (Gilbert AZ) Ooms William J. (Chandler AZ), Method of making a III-V complementary heterostructure device with compatible non-gold ohmic contacts.

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206. Miyagaki Shinji,JPX ; Eshita Takashi,JPX ; Ohkubo Satoshi,JPX ; Takai Kazuaki,JPX, Method of making a device having a heteroepitaxial substrate.

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207. Calviello Joseph A. (Kings Park NY) Hickman Grayce A. (Hicksville NY), Method of making a monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substr.

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208. Kondo Makoto (Kawasaki JPX) Anayama Chikashi (Kawasaki JPX) Shoji Hajime (Kawasaki JPX), Method of making a semiconductor device utilizing crystal orientation dependence of impurity concentration.

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209. Umeno Masayoshi (Nagoya JPX) Sakai Shiro (Nagoya JPX) Yahagi Shinichiro (Ohbu JPX), Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice.

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210. Tsu Robert ; Kulwicki Bernard M., Method of making barium strontium titanate (BST) thin film by erbium donor doping.

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211. Abrokwah Jonathan K. (1963 E. Ranch Rd. Tempe AZ 85284) Huang Jenn-Hwa (1426 W. Tara Dr. Gilbert AZ 85234) Cho Jaeshin (507 E. Page Ave. Gilbert AZ 85234), Method of making ohmic contacts to a complementary III-V semiconductor device.

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212. Shichijo Hisashi (Garland TX), Method of making planarized heterostructures using selective epitaxial growth.

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213. Cozzette Stephen N. (Hightstown NJ) Davis Graham (Plainsboro NJ) Itak Jeanne (Hamilton NJ) Lauks Imants R. (Yardley PA) Mier Randall M. (Ottawa NJ CAX) Piznik Sylvia (Jackson NJ) Smit Nicolaas (Hight, Method of manufacturing a plurality of uniform microfabricated sensing devices having an immobilized ligand receptor.

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214. Murakami Toshiaki (Mito JPX) Moriwaki Kazuyuki (Mito JPX), Method of manufacturing thin compound oxide film and apparatus for manufacturing thin oxide film.

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215. Barber Ivor G., Method of packaging integrated circuits.

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216. Takeda Toshikazu (Nagaokakyo JPX) Ogiso Yoshifumi (Nagaokakyo JPX) Nakagawa Takuji (Nagaokakyo JPX) Senda Atsuo (Nagaokakyo JPX), Method of preparing InSb thin film.

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217. Yu Zhiyi Jimmy ; Hallmark Jerald A. ; Abrokwah Jonathan K. ; Overgaard Corey D. ; Droopad Ravi, Method of preparing crystalline alkaline earth metal oxides on a Si substrate.

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218. Newman Nathan (Montara CA) Kapitulnik Aharon (Palo Alto CA) Cole Brady F. (Sunnyvale CA) Simon Randy W. (Belmont CA), Method of preparing high temperature superconductor films on opposite sides of a substrate.

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219. Mantl Siegfried,DEX ; Hollander Bernd,DEX ; Butz Rainer,DEX, Method of producing electronic, electrooptical and optical components.

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220. Ohno Hirotaka (Tenri JPX) Matsunaga Hironori (Tenri JPX) Okamoto Yasunari (Nara JPX) Nakajima Yoshiharu (Nara JPX), Method of producing ferroelectric LiNb₁-31 xTaxO₃0 상세보기