IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0709071
(1996-09-06)
|
우선권정보 |
JP-0107294 (1996-04-26) |
발명자
/ 주소 |
- Maegawa, Shigeto
- Ipposhi, Takashi
- Iwamatsu, Toshiaki
|
출원인 / 주소 |
- Mitsubishi Denki Kabushiki Kaisha
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
64 인용 특허 :
11 |
초록
▼
A semiconductor layer has one end placed on top of a first conductive layer and in contact with the first conductive layer, and the other end placed on top of a second conductive layer and in contact with the second conductive layer. At the central portion, the semiconductor layer faces a gate elect
A semiconductor layer has one end placed on top of a first conductive layer and in contact with the first conductive layer, and the other end placed on top of a second conductive layer and in contact with the second conductive layer. At the central portion, the semiconductor layer faces a gate electrode layer with a gate insulating layer interposed therebetween. The semiconductor layer is formed so that its width W1is smaller than its height H1. As a result, a thin film transistor and manufacturing method thereof can be obtained in which contact between a source/drain region of the thin film transistor and an upper or lower conductive layer can be made stably.
대표청구항
▼
A semiconductor layer has one end placed on top of a first conductive layer and in contact with the first conductive layer, and the other end placed on top of a second conductive layer and in contact with the second conductive layer. At the central portion, the semiconductor layer faces a gate elect
A semiconductor layer has one end placed on top of a first conductive layer and in contact with the first conductive layer, and the other end placed on top of a second conductive layer and in contact with the second conductive layer. At the central portion, the semiconductor layer faces a gate electrode layer with a gate insulating layer interposed therebetween. The semiconductor layer is formed so that its width W1is smaller than its height H1. As a result, a thin film transistor and manufacturing method thereof can be obtained in which contact between a source/drain region of the thin film transistor and an upper or lower conductive layer can be made stably. Clinical Physics and Physiological Measurement, Suplement A; vol. 13, XP000431598; York, GB. Zhili Huang, et al.; "Bioimpedance Measurement: Theory, Experiment and Application;" Nov. 1987; pp 1416-1427 Proceedings of the Ninth Annual Conference of the IEEE Engineering in Medicine and Biology Society; vol. 3; XP000015434. Piperno, G. et al.; "Breast Cancer Screening by Impedance Measurements:" 1990; pp. 111-117; Frontiers Med. Biol.; vol. 2: plus two attached pages "Mammoscan: A Promising New Technology for Breast Screening and Diagnosis;" and "Mammoscan Breast Impedance System". Esselle, et al.; "Capacitive Sensors for In-Vivo Measurements of the Dielectric Properties of Biological Materials;" Mar. 1988; pp. 101-105; IEEE Transactions on Instrumentation & Measurement; vol. 37; No. 1. Gersing, E.; "Messung der Elecktrischen Impedance von Organen-Apparative Ausrustung fur Forschung und Klinishe Anwendung;"1991; pp. 6-11; Bimed. Technik 36; (including abstract in English). Vrana, J. et al.; "Mesure de L'Impedance des Tissus Hepatiqueles Transforms pas des Processus Lesionels;" 1992; pp. 165-168; Ann. Gastroentreaol. Hepetol.; vol. 28; No. 4; (including abstract in English). Rajshekhar, V.; "Continuous Impedance Monitoring During CT-Guidued Stereotactic Surgery: Relative Value in Cystic and Solid Lesions; 1992; pp. 439-444" British Journal of Neurosurgery (1992); vol. 6. Mastrototaro, J. J. et al.; "Rigid and Flexible Thin-Film Multi-Electrode Arrays for Transmural Cardiac Recording;" Mar. 1992; pp. 271-279; IEEE Trans. Biomed. Engr.; vol. 39; No. 3. Urban, G. A. et al.; "Development of a Multiple Thin-Film Semimicro DC-Probe for Intracerebral Recordings;" Oct. 1990; pp. 913-917 IEEE Trans. Biomed. Eng.; vol. 37; No. 10. Smith, R. W. M. et al.; "A Real-Time Electrical Impedance Tomography System for Clinical Use-Design and Preliminar Results;" Feb. 1995; pp. 133-139; IEEE Trans. Biomed. Eng.; vol. 42. Surowiec, A.J. et al.; "Dielectric Properties of Breast Carcinoma and the Surrounding Tissues;"Apr. 1988; pp. 257-263; IEEE Trans. Biomed. Eng.; vol. 35; No. 4. Heimbach, M.; "Measures of Preformance;" 1990; pp. 158-174; Electrical Impedance Tomography; (12.1). Davies, R. J. et al.; "detection of the Cancer-Prone Colon, Using Transepothelial Impedance Analysis;" Apr. 1989; pp. 480-484; Arch Surg.; vol. 124. Morimoto, T. et al.; "A Study of the Electrical Bio-Impedance of Tumors;" 1993; pp. 25-32; Journal of Investigative Surgery; vol. 6. Man et al.; "Results of Pre-Clinical Test for Breast Cancer Detection by Dielectric Measurements;" Aug. 12-24, 1979; International Conference of Medical and Biological Engineering, V International Conference of Medical Physics; 30.4; Jerusalem, Israel. Riu, P. et al.; "A Broadband System for Multifrequency Static Imaging in Electrical Impedance Tomography"; 1992; pp. 61-65; Clin. Physiol. Meas.; vol. 13; Suppl. A. Rigaud, B. et al.; "Experimental Acquisition System for Impedance Tomography with Active Electrode Approach;" Nov. 1, 1993; pp. 593-599; Medical and Biological Engineering and Computing; vol. 31; No. 6; XP000415771. Korte, C. J.; "Subsurface Electrical Impedance Imaging Using Orthogonal Linear Electrode arrays;" Jan. 16, 1996; pp. 41-46; IEEE Proceedings: Science, Measurement and Technology; vol. 143; No. 1; XP006006750. Anah, J. et al.; "Multi-Function Interface Unit for Applied Potential Tomography;" Nov. 1998; pp. 287-288; Proceedings of the Annual International Conference of the IEEE Engineering in Medicine and Biology Society (IEEE Cat. No. 88CH2566-8); XP002171794.
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