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A microelectronic substrate and method for manufacture. In one embodiment, the microelectronic substrate includes a body having a first surface, a second surface facing a direction opposite from the first surface, and a plurality of voids in the body between the first and second surfaces. The voids

A microelectronic substrate and method for manufacture. In one embodiment, the microelectronic substrate includes a body having a first surface, a second surface facing a direction opposite from the first surface, and a plurality of voids in the body between the first and second surfaces. The voids can extend from the first surface to a separation region beneath the first surface. At least one operable microelectronic device is formed at and/or proximate to the first surface of the substrate material, and then a first stratum of the microelectronic substrate above the separation region is separated from a second stratum of the microelectronic substrate below the separation region. The first stratum of the microelectronic substrate can be further separated into discrete microelectronic dies before the first stratum is separated from the second stratum. In one aspect of this embodiment, the substrate can support a film and microelectronic devices can be formed in the film and/or in the substrate.

대표청구항 ▼

A microelectronic substrate and method for manufacture. In one embodiment, the microelectronic substrate includes a body having a first surface, a second surface facing a direction opposite from the first surface, and a plurality of voids in the body between the first and second surfaces. The voids

A microelectronic substrate and method for manufacture. In one embodiment, the microelectronic substrate includes a body having a first surface, a second surface facing a direction opposite from the first surface, and a plurality of voids in the body between the first and second surfaces. The voids can extend from the first surface to a separation region beneath the first surface. At least one operable microelectronic device is formed at and/or proximate to the first surface of the substrate material, and then a first stratum of the microelectronic substrate above the separation region is separated from a second stratum of the microelectronic substrate below the separation region. The first stratum of the microelectronic substrate can be further separated into discrete microelectronic dies before the first stratum is separated from the second stratum. In one aspect of this embodiment, the substrate can support a film and microelectronic devices can be formed in the film and/or in the substrate. ment layer is substantially transparent to light having the desired wavelength or range of wavelengths. 3. A detector according to claim 1 wherein the second absorbing layer is substantially transparent to light that has a wavelength that is greater than the desired wavelength or range of wavelengths. 4. A detector according to claim 1 wherein the first absorbing layer, the second absorbing layer and the first confinement layer each are formed from a material or material system that has a bandgap energy, the band gap energy of the first confinement layer is larger than the bandgap energy of both the first absorbing layer and the second absorbing layer. 5. A detector according to claim 4 wherein the bandgap energy of the first absorbing layer is larger than the bandgap energy of the second absorbing layer. 6. A detector according to claim 1, wherein the detector receives light on an incident side, and said first absorbing layer is positioned closer to the incident side of the detector than the second absorbing layer. 7. A detector according to claim 1 further comprising: a second confinement layer; wherein the second absorbing layer is positioned between the first confinement layer and the second confinement layer. 8. A detector according to claim 1, wherein the second absorbing layer includes a PN junction, and wherein an output of the detector is taken across the PN junction. 9. A detector according to claim 1, wherein the second absorbing layer and an adjacent layer form a PN junction, and wherein an output of the detector is taken across the PN junction. 10. A detector for detecting a desired range of wavelengths of light, the light entering the detector from an incident side, the detector comprising: a first absorbing layer positioned adjacent the incident side of the detector, the first absorbing layer having at least one layer with a bandgap energy that is adapted for absorbing light having a wavelength that is below the desired range of wavelengths; a second absorbing layer positioned downstream of the first absorbing layer, the second absorbing layer having at least one layer with a bandgap energy that is adapted for absorbing light that has the desired range of wavelengths as well as light that has a wavelength that is below the desired range of wavelengths; and a first confinement layer situated between the first absorbing layer and the second absorbing layer for substantially preventing any carriers that are generated in the first absorbing layer from entering the second absorbing layer. 11. A detector according to claim 10 wherein the at least one layer of the first absorbing layer has a bandgap energy that is larger than the bandgap energy of the at least one layer of the second absorbing layer. 12. A detector according to claim 11 wherein the first confinement layer has at least one layer with a bandgap energy, the bandgap energy of the at least one layer of the confinement layer is larger than the bandgap energy of the at least one layer of the first absorbing layer and the at least one layer of the second absorbing layer. 13. A detector for detecting a desired range of wavelengths of light wherein the light enters the detector from an incident side, the desired range of wavelengths defined by a lower cutoff and an upper cutoff, the detector comprising: a first absorbing layer positioned adjacent the incident side of the detector, the first absorbing layer adapted to absorb light that has a wavelength defined by the lower cutoff of the detector on down for a predetermined absorption spectrum; a second absorbing layer positioned downstream of the first absorbing layer, the second absorbing layer adapted to absorb light that has a wavelength defined by the upper cutoff of the detector on down for a predetermined absorption spectrum; and a confinement layer situated between the first absorbing layer and the second absorbing layer. 14. A detector according to claim 13 wherein the second absorbing