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Instead of a relay block which is present in bus bar circuits in a conventional electric junction box, semiconductor switching devices 14 are provided, and a power distributing unit PD which is independent of a bus bar circuit unit JB is structured by concentrating these semiconductor switching devi

Instead of a relay block which is present in bus bar circuits in a conventional electric junction box, semiconductor switching devices 14 are provided, and a power distributing unit PD which is independent of a bus bar circuit unit JB is structured by concentrating these semiconductor switching devices 14, output terminals 12 of this power distributing unit PD being connected to appropriate bus bars 32 of the bus bar circuit unit JB. The power distributing unit PD and the bus bar circuit unit JB are incorporated in a common housing 40.

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Instead of a relay block which is present in bus bar circuits in a conventional electric junction box, semiconductor switching devices 14 are provided, and a power distributing unit PD which is independent of a bus bar circuit unit JB is structured by concentrating these semiconductor switching devi

Instead of a relay block which is present in bus bar circuits in a conventional electric junction box, semiconductor switching devices 14 are provided, and a power distributing unit PD which is independent of a bus bar circuit unit JB is structured by concentrating these semiconductor switching devices 14, output terminals 12 of this power distributing unit PD being connected to appropriate bus bars 32 of the bus bar circuit unit JB. The power distributing unit PD and the bus bar circuit unit JB are incorporated in a common housing 40. 1. A contact structure for a compound semiconductor device having p-type or n-type conduction, comprising: a first plurality layer structure having at least a first contact layer of metal selected from the group consisting of Indium, Tin, Zinc and alloys thereof contacting a group III-V compound semiconductor and a second contact layer of transparent conducting oxide selected from the group consisting of Indium-Tin-Oxide, Indium-Oxide, Tin-Oxide and Zinc-Oxide being formed on said first contact layer; and a second layer structure including a metal pad formed on said first plurality layer structure. 2. A contact structure according to claim 1, wherein said first plurality layer structure has undergone a thermal anneal at an elevated temperature. 3. A contact structure according to claim 2, wherein said thermal anneal was performed in a temperature range between about 200° C. and 700° C. 4. A contact structure according to claim 2, wherein said thermal anneal was performed under in an atmosphere including at least one gaseous species selected from the group of gaseous species consisting of air, nitrogen, oxygen, argon, and helium. 5. A contact structure according to claim 1, wherein said metal pad of said second layer structure comprises at least one element selected from the group of elements consisting of Aluminum (Al), Gold (Au), Chromium (Cr), Molybdenum (Mo), Nickel (Ni), Palladium (Pd), Platinum (Pt), Rhodium (Rh), Tantalum (Ta), and Titanium (Ti). 6. A contact structure according to claim 1, wherein said first contact layer of said first plurality layer structure comprises Indium, and said second contact layer of transparent conducting oxide of said first plurality layer structure comprises Indium-Tin-oxide (ITO). 7. A contact structure according to claim 1, wherein said first contact layer of said first plurality structure comprises Indium, and said second contact layer of transparent conducting oxide of said first plurality structure comprises Indium-oxide (In2O3). 8. A contact structure according to claim 1, wherein said first contact layer of said first plurality structure comprises Indium, and said second contact layer of transparent conducting oxide of said first plurality structure comprises Tin-oxide (SnO2). 9. A contact structure according to claim 1, wherein said first contact layer of said first plurality layer structure comprises tin, and said second contact layer of transparent conducting oxide of said first plurality layer structure comprises Indium-Tin-oxide (ITO). 10. A contact structure for a compound semiconductor device having p-type or n-type conduction, comprising: a first plurality layer structure having at least a first contact layer of metal contacting a group III-V compound semiconductor and a second contact layer of transparent conducting oxide being formed on said first contact layer; and a second layer structure including a metal pad formed on said first plurality layer structure, wherein said first contact layer of said first plurality structure comprises tin, and said second contact layer of transparent conducting oxide of said first plurality structure comprises Indium-oxide (In2O3). 11. A contact structure for a compound semiconductor device having p-type or n-type conduction, comprising: a first plurality layer structure having at least a first contact layer of metal contacting a group III-V compound semiconductor and a second contact layer of transparent conducting oxide being formed on said first contact layer; and a second layer structure including a metal pad formed on said first plurality layer structure, wherein said first contact layer of said first plurality structure comprises tin, and said second contact layer of transparent conducting oxide of said first plurality structure comprises Tin-oxide (SnO2). 12. A contact structure for a compound semiconductor device having p-type or n-type conducti on, comprising: a first plurality layer structure having at least a first contact layer of metal contacting a group III-V compound semiconductor and a second contact layer of transparent conducting oxide being formed on said first contact layer; and a second layer structure including a metal pad formed on said first plurality layer structure, wherein said first contact layer of said first plurality layer structure comprises zinc, and said second contact layer of transparent conducting oxide of said first plurality layer structure comprises Indium-Tin-oxide (ITO). 13. A contact structure for a compound semiconductor device having p-type or n-type conduction, comprising: a first plurality layer structure having at least a first contact layer of metal contacting a group III-V compound semiconductor and a second contact layer of transparent conducting oxide being formed on said first contact layer; and a second layer structure including a metal pad formed on said first plurality layer structure, wherein said first contact layer of said first plurality structure comprises zinc, and said second contact layer of transparent conducting oxide of said first plurality structure comprises Indium-oxide (In2O3). 14. A contact structure for a compound semiconductor device having p-type or n-type conduction, comprising: a first plurality layer structure having at least a first contact layer of metal contacting a group III-V compound semiconductor and a second contact layer of transparent conducting oxide being formed on said first contact layer; and a second layer structure including a metal pad formed on said first plurality layer structure, wherein said first contact layer of said first plurality structure comprises zinc, and said second contact layer of transparent conducting oxide of said first plurality structure comprises Tin-oxide (SnO2). 15. A contact structure according to claims 6-14, wherein said first plurality layer structure has undergone a thermal anneal at an elevated temperature, and wherein said thermal anneal is performed in a temperature range from about 200° C. to 700° C. 16. A contact structure according to claim 1, wherein said first contact layer of said first plurality structure has a thickness in a range between about 5 Angstroms and 1000 Angstroms. 17. A contact structure according to claim 16, wherein said second contact layer of transparent conducting oxide of said first plurality structure has a thickness in a range between about 100 Angstroms and 50,000 Angstroms. 18. A contact structure according to claim 17, wherein said metal pad of said second layer structure has a thickness in a range between about 100 Angstroms and 50,000 Angstroms. 19. A contact structure according to claim 1, wherein said second contact layer of transparent conducting oxide of said first plurality structure has a thickness in a range between about 100 Angstroms and 50,000 Angstroms. 20. A contact structure according to claim 1, wherein said metal pad of said second layer structure has a thickness in a range between about 100 Angstroms and 50,000 Angstroms. 21. A contact structure according to claim 5, wherein said metal pad of said second layer structure has a thickness in a range between about 100 Angstroms and 50,000 Angstroms. 22. A contact structure according to claim 5, wherein said metal pad of said second layer structure is configured for connection with electronic circuitry by a method selected from the group of methods consisting of wire-bonding and anisotropic conductive film bonding. 23. A contact structure as in any of claims 3 or 6-14, wherein said thermal anneal was performed in an atmosphere of nitrogen. 24. A contact structure according to any of claims 3 or 6-14, wherein said thermal anneal was performed in an atmosphere of air. 25. A contact structure according to any of claims 3 or 6-14, wherein said thermal anneal was performed in an atmosphere of oxygen. 26. A c