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An integrated circuit chip having an anti-moisture-absorption film at the edge thereof and a method of forming the anti-moisture-absorption film are provided. In the integrated circuit chip which has predetermined devices inside and whose uppermost layer is covered with a passivation film, a trench

An integrated circuit chip having an anti-moisture-absorption film at the edge thereof and a method of forming the anti-moisture-absorption film are provided. In the integrated circuit chip which has predetermined devices inside and whose uppermost layer is covered with a passivation film, a trench is formed by etching interlayer dielectric films to a predetermined depth along the perimeter of the integrated circuit chip to be adjacent to the edge of the integrated circuit chip and an anti-moisture-absorption film is formed to fill the trench or is formed on the sidewall of the trench to a predetermined thickness, in order to prevent moisture from seeping into the edge of the integrated circuit chip. Moisture is effectively prevented from seeping into the edge of the chip by forming the anti-moisture-absorption film at the edge of the chip using the conventional processes of manufacturing the integrated circuit chip without an additional process.

대표청구항 ▼

An integrated circuit chip having an anti-moisture-absorption film at the edge thereof and a method of forming the anti-moisture-absorption film are provided. In the integrated circuit chip which has predetermined devices inside and whose uppermost layer is covered with a passivation film, a trench

An integrated circuit chip having an anti-moisture-absorption film at the edge thereof and a method of forming the anti-moisture-absorption film are provided. In the integrated circuit chip which has predetermined devices inside and whose uppermost layer is covered with a passivation film, a trench is formed by etching interlayer dielectric films to a predetermined depth along the perimeter of the integrated circuit chip to be adjacent to the edge of the integrated circuit chip and an anti-moisture-absorption film is formed to fill the trench or is formed on the sidewall of the trench to a predetermined thickness, in order to prevent moisture from seeping into the edge of the integrated circuit chip. Moisture is effectively prevented from seeping into the edge of the chip by forming the anti-moisture-absorption film at the edge of the chip using the conventional processes of manufacturing the integrated circuit chip without an additional process. olishing. 6. A process of production of a semiconductor memory device having a memory array including memory cells and a peripheral circuit on one substrate comprising: forming an interlayer insulating layer covering said memory array and peripheral circuit; forming said memory cells having capacitors to be composed of electrodes; etching back the interlayer insulating layer covering said peripheral circuit using the electrodes of the capacitors as a mask; and flattening by chemical mechanical polishing. 7. A process of production of a semiconductor memory device according to claim 5 or 6, wherein side walls on sides of gate electrodes of MOS transistors in the peripheral circuit are formed by etching back the interlayer insulating layer covering said peripheral circuit. 8. A process of production of a semiconductor memory device having a memory array including memory cells and a peripheral circuit on one substrate comprising: forming an interlayer insulating layer covering said memory array and peripheral circuit; forming said memory cells; exposing a surface of diffusion regions in the peripheral circuit after forming said memory cells by forming holes in said interlayer insulating layer; forming a covering conductive layer on the exposed surface of the diffusion regions by burying said holes with a conductor; and flattening by chemical mechanical polishing.