IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0195716
(2002-07-16)
|
우선권정보 |
JP-0261614 (2001-08-30) |
발명자
/ 주소 |
- Imai, Toshinori
- Fujiwara, Tsuyoshi
- Shiraishi, Tomohiro
- Ashihara, Hiroshi
- Yoshida, Masaaki
|
출원인 / 주소 |
- Renesas Technology Corporation
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
8 인용 특허 :
5 |
초록
▼
Peeling between a bonding pad and an insulating film which underlies the bonding pad is to be prevented. A laminate film constituted mainly by W which is higher in mechanical strength than a wiring layer using an Al alloy film as a main conductive layer and than a bonding pad, is formed within an ap
Peeling between a bonding pad and an insulating film which underlies the bonding pad is to be prevented. A laminate film constituted mainly by W which is higher in mechanical strength than a wiring layer using an Al alloy film as a main conductive layer and than a bonding pad, is formed within an aperture formed in silicon oxide films and is interposed between the wiring line and the bonding pad.
대표청구항
▼
Peeling between a bonding pad and an insulating film which underlies the bonding pad is to be prevented. A laminate film constituted mainly by W which is higher in mechanical strength than a wiring layer using an Al alloy film as a main conductive layer and than a bonding pad, is formed within an ap
Peeling between a bonding pad and an insulating film which underlies the bonding pad is to be prevented. A laminate film constituted mainly by W which is higher in mechanical strength than a wiring layer using an Al alloy film as a main conductive layer and than a bonding pad, is formed within an aperture formed in silicon oxide films and is interposed between the wiring line and the bonding pad. US-4571387, 19860200, Bruynesteyn et al., 435/262; US-4585548, 19860400, Cadzow et al., 209/005; US-4654078, 19870300, Perez et al., 075/118.R; US-4657946, 19870400, Rende et al., 523/402; US-4690894, 19870900, Brierley et al., 435/244; US-4721526, 19880100, Elmore et al., 075/118.R; US-4729788, 19880300, Hutchins et al., 075/118.R; US-4732608, 19880300, Emmett, Jr. et al., 075/101.R; US-4740243, 19880400, Krebs-Yuill et al., 423/027; US-4743396, 19880500, Fong et al., 252/313.1; US-4751259, 19880600, Roe et al., 524/052; US-4752332, 19880600, Wu et al., 075/101.R; US-4765827, 19880800, Clough et al., 075/002; US-4767449, 19880800, Rosen et al., 075/003; US-4778519, 19881000, Pesic, 075/118.R; US-4789481, 19881200, Brierley et al., 210/661; US-4801329, 19890100, Clough et al., 075/097; US-4802914, 19890200, Rosen et al., 075/003; US-4822413, 19890400, Pooley et al., 075/118.R; US-4875935, 19891000, Gross et al., 075/117; US-4888293, 19891200, Hackl et al., 435/245; US-4898611, 19900200, Gross, 075/003; US-4898827, 19900200, Brierley et al., 435/244; US-4902345, 19900200, Ball et al., 075/118.R; US-4910010, 19900300, Khalafalla, 423/508; US-4960461, 19901000, Esna-Ashari et al., 423/027; US-4961777, 19901000, Perez et al., 075/313; US-4968008, 19901100, Emmett, Jr. et al., 266/168; US-4987081, 19910100, Hackl et al., 435/262; US-4992179, 19910200, Brierley et al., 210/661; US-5004786, 19910400, Fong et al., 525/344; US-5005806, 19910400, Krauth, 266/101; US-5006320, 19910400, Reid et al., 423/150
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