초록

An apparatus including a substrate comprising a device having contact point; a dielectric layer overlying the device with an opening to the contact point; and an interconnect structure disposed in the opening including an interconnect material and a different conductive shunt material.

대표청구항 ▼

1. An apparatus comprising: a substrate comprising a device having contact point; a dielectric layer overlying the device with an opening to the contact point; and an interconnect structure disposed in the opening comprising an interconnect material and a different conductive shunt material; w

1. An apparatus comprising: a substrate comprising a device having contact point; a dielectric layer overlying the device with an opening to the contact point; and an interconnect structure disposed in the opening comprising an interconnect material and a different conductive shunt material; wherein the opening through the dielectric material comprises a via having a cross-sectional area and a volume, and the shunt material substantially fills the volume of the via. 2. The apparatus of claim 1, wherein the shunt material overlies the interconnect material. 3. The apparatus of claim 2, wherein the dielectric layer is a first dielectric layer, and further comprising a second dielectric layer with an opening to the shunt material. 4. The apparatus of claim 1, wherein the interconnect structure comprises a barrier material disposed along side walls of the opening and the shunt material is disposed between the barrier material and the interconnect material. 5. The apparatus of claim 4, wherein the interconnect structure comprises a seed material and the shunt material is disposed between the seed material and the interconnect material. 6. The apparatus of claim 1, wherein the opening through the dielectric material comprises a trench to the via having a cross-sectional area greater than the cross-sectional area of the via. 7. The apparatus of claim 6, wherein the interconnect structure comprises a barrier material disposed along side walls of the opening and the shunt material is disposed between the barrier material and the interconnect material. 8. The apparatus of claim 1, wherein the conductive shunt material comprises one of cobalt and a cobalt alloy. 9. An apparatus comprising: a substrate comprising a device having a contact point; a barrier material in an opening through a dielectric layer over the contact point; a conductive shunt material different from the barrier material on the barrier material; an interconnect structure diposed in the opening over the conductive shunt material; and a conductive shunt structure over an exposed portion of the interconnect structure. 10. The apparatus of claim 9, wherein the barrier material is disposed along side walls of the opening and the shunt material is disposed between the barrier material and an interconnect material of the interconnect structure. 11. The apparatus of claim 9, wherein the conductive shunt material comprises one of cobalt and a cobalt alloy. 12. The apparatus of claim 9, wherein the interconnect structure comprises: a seed material on the conductive shunt material; and an interconnect material on the seed material. 13. The apparatus of claim 9, wherein the conductive shunt structure encapsulates the interconnect structure and exposed portions of the conductive shunt material and the barrier material. 14. The apparatus of claim 9, wherein the opening through the dielectric material comprises a via having a cross-sectional area and a volume, and the shunt material substantially fills the volume of the via.