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A compact plasma accelerator having components including a cathode electron source, an anodic ionizing gas source, and a magnetic field that is cusped. The components are held by an electrically insulating body having a central axis, a top axial end, and a bottom axial end. The cusped magnetic field

A compact plasma accelerator having components including a cathode electron source, an anodic ionizing gas source, and a magnetic field that is cusped. The components are held by an electrically insulating body having a central axis, a top axial end, and a bottom axial end. The cusped magnetic field is formed by a cylindrical magnet having an axis of rotation that is the same as the axis of rotation of the insulating body, and magnetized with opposite poles at its two axial ends; and an annular magnet coaxially surrounding the cylindrical magnet, magnetized with opposite poles at its two axial ends such that a top axial end has a magnetic polarity that is opposite to the magnetic polarity of a top axial end of the cylindrical magnet. The ionizing gas source is a tubular plenum that has been curved into a substantially annular shape, positioned above the top axial end of the annular magnet such that the plenum is centered in a ring-shaped cusp of the magnetic field generated by the magnets. The plenum has one or more capillary-like orifices spaced around its top such that an ionizing gas supplied through the plenum is sprayed through the one or more orifices. The plenum is electrically conductive and is positively charged relative to the cathode electron source such that the plenum functions as the anode; and the cathode is positioned above and radially outward relative to the plenum.

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A compact plasma accelerator having components including a cathode electron source, an anodic ionizing gas source, and a magnetic field that is cusped. The components are held by an electrically insulating body having a central axis, a top axial end, and a bottom axial end. The cusped magnetic field

A compact plasma accelerator having components including a cathode electron source, an anodic ionizing gas source, and a magnetic field that is cusped. The components are held by an electrically insulating body having a central axis, a top axial end, and a bottom axial end. The cusped magnetic field is formed by a cylindrical magnet having an axis of rotation that is the same as the axis of rotation of the insulating body, and magnetized with opposite poles at its two axial ends; and an annular magnet coaxially surrounding the cylindrical magnet, magnetized with opposite poles at its two axial ends such that a top axial end has a magnetic polarity that is opposite to the magnetic polarity of a top axial end of the cylindrical magnet. The ionizing gas source is a tubular plenum that has been curved into a substantially annular shape, positioned above the top axial end of the annular magnet such that the plenum is centered in a ring-shaped cusp of the magnetic field generated by the magnets. The plenum has one or more capillary-like orifices spaced around its top such that an ionizing gas supplied through the plenum is sprayed through the one or more orifices. The plenum is electrically conductive and is positively charged relative to the cathode electron source such that the plenum functions as the anode; and the cathode is positioned above and radially outward relative to the plenum. for making an electrooptical device according to claim 15, wherein the step difference is formed along at least one side of a device region including the active device. 19. A method for making an electrooptical device according to claim 15, wherein the step difference is formed along at least one side of a device region including a first thin-film transistor. 20. A method for making an electrooptical device according to claim 1, wherein the first substrate is either a glass substrate or a heat-resistant organic substrate. 21. A method for making an electrooptical device according to claim 1, wherein the first substrate is optically opaque or transparent. 22. A method for making an electrooptical device according to claim 1, wherein pixel electrodes are provided for a reflective or transmissive display. 23. A method for making an electrooptical device according to claim 1, wherein the display section further comprises a laminated configuration of pixel electrodes and a color filter layer. 24. A method for making an electrooptical device according to claim 1, wherein unevenness is formed on a resin film when pixel electrodes are reflective electrodes, or the surface is planarized by a transparent planarization film and the pixel electrodes are formed on the planarized plane when the pixel electrodes are transparent electrodes. 25. A method for making an electrooptical device according to claim 1, wherein the display section comprises one of a liquid crystal display, an electroluminescent display, a field emission display, a light-emitting polymer display, and a light-emitting diode display. 26. A method for making a driving substrate for an electrooptical device comprising a substrate including a display section provided with pixel electrodes and a peripheral-driving-circuit section provided at a periphery of the display section, the method comprising the steps of: forming a material layer having a high degree of lattice matching with single-crystal silicon above the substrate; forming a polycrystalline or amorphous silicon layer having a given thickness over the substrate and the material layer and then forming a low-melting-point metal layer on or under the polycrystalline or amorphous silicon layer, or forming a low-melting-point metal layer containing silicon over the substrate and the material layer; dissolving the polycrystalline or amorphous silicon layer or the silicon into the low-melting-point metal layer by a heat treatment; precipitating a single-crystal silicon layer from the silicon in the polycrystalline or amorphous silicon layer or the silicon in the low-melting-point metal layer by heteroepitaxial growth including a cooling treatment using the material layer as a seed; and treating the single-crystal silicon layer through a predetermined process to form at least an active device. 27. A method for making a driving substrate for an electrooptical device according to claim 26, the method further comprising the steps of: forming a channel region, a source region, and a drain region in the deposited single-crystal silicon layer by a predetermined process; and forming a gate section above the channel region so as to form a top-gate type first thin-film transistor constituting at least a part of the peripheral-driving-circuit section. 28. A method for making a driving substrate for an electrooptical device according to claim 26, wherein the polycrystalline or amorphous silicon layer is formed by a low-temperature deposition process, the low-melting-point metal layer is deposited thereon or ther