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A hybrid semiconductor substrate assembly is made by first forming a silicon oxide (SiOx) layer within a silicon carbide wafer, thus forming a silicon carbide membrane on top of the silicon oxide layer and on a surface of the silicon carbide wafer. Optionally, the silicon oxide layer is then thermal

A hybrid semiconductor substrate assembly is made by first forming a silicon oxide (SiOx) layer within a silicon carbide wafer, thus forming a silicon carbide membrane on top of the silicon oxide layer and on a surface of the silicon carbide wafer. Optionally, the silicon oxide layer is then thermally oxidized in the presence of steam or oxygen. A substrate-of-choice is then wafer bonded to the silicon carbide membrane, optionally in the presence of a wetting layer that is located intermediate the substrate-of-choice and the silicone carbide membrane, the wetting layer containing silicon. The silicon oxide layer is then removed by hydrofluoric acid etching, to thereby provide a hybrid semiconductor substrate assembly that includes the substrate-of-choice wafer bonded to the silicon carbide membrane. The hybrid semiconductor substrate assembly is then annealed. The method is repeated a plurality of times, to thereby provide a plurality of hybrid semiconductor substrate assemblies, each assembly including a substrate-of-choice wafer bonded to a silicon carbide membrane. Optionally, an annealing step may be provided after the silicon oxide layer is formed and prior to wafer bonding.

대표청구항 ▼

A hybrid semiconductor substrate assembly is made by first forming a silicon oxide (SiOx) layer within a silicon carbide wafer, thus forming a silicon carbide membrane on top of the silicon oxide layer and on a surface of the silicon carbide wafer. Optionally, the silicon oxide layer is then thermal

A hybrid semiconductor substrate assembly is made by first forming a silicon oxide (SiOx) layer within a silicon carbide wafer, thus forming a silicon carbide membrane on top of the silicon oxide layer and on a surface of the silicon carbide wafer. Optionally, the silicon oxide layer is then thermally oxidized in the presence of steam or oxygen. A substrate-of-choice is then wafer bonded to the silicon carbide membrane, optionally in the presence of a wetting layer that is located intermediate the substrate-of-choice and the silicone carbide membrane, the wetting layer containing silicon. The silicon oxide layer is then removed by hydrofluoric acid etching, to thereby provide a hybrid semiconductor substrate assembly that includes the substrate-of-choice wafer bonded to the silicon carbide membrane. The hybrid semiconductor substrate assembly is then annealed. The method is repeated a plurality of times, to thereby provide a plurality of hybrid semiconductor substrate assemblies, each assembly including a substrate-of-choice wafer bonded to a silicon carbide membrane. Optionally, an annealing step may be provided after the silicon oxide layer is formed and prior to wafer bonding. tion. 3. A chemical composition in accordance with claim 1 further comprising an inorganic source of electron acceptors and an ammonium-free source of inorganic nutrient nitrogen selected from the group consisting of sodium nitrate, sodium-potassium nitrate, potassium nitrate, and combinations thereof, from about 0.1% to 40%, by weight percent, of the composition. 4. A chemical composition in accordance with claim 1, further comprising a source of nutrient phosphorus and a surfactant selected from the group consisting of sodium hexametaphosphate, sodium trimetaphosphate, other biologically hydrolyzable ringed metaphosphates and linear polyghosphates, and combinations thereof, from about 0.02% to 20%, by weight percent of the composition. 5. A chemical composition in accordance with claim 1, further comprising a source of chelating agents, acidifying agents, or organic acids, selected from the group, consisting of citric acid, humic acid, fulvic acid, sodium citrate, nitrilotriacetic acid (NTA), ethylenediaminetetraacetic acid (EDTA), and combinations thereof, from about 0.01% to 5%, by weight percent, of the composition. 6. A chemical composition in accordance with claim 1 further comprising a source of plant material selected from the group consisting of Triticum and Aeqilops and combinations thereof, from about 0.5% to 30%, by weight percent, of the composition. 7. A chemical composition in accordance with claim 1, wherein said plant materials are further selected from the group consisting of Lespedeza spp., Medicago spp., Vicia spp. Glycine spp., Lathyrus spp., Trifolium spp., and combinations thereof. 8. A chemical composition in accordance with claim 1, wherein said plant material is further selected from the marine plant genus Sargassum. 9. A chemical composition in accordance with claim 1, wherein said source of iron comprises sponge iron particles, being a porous form of iron particles. 10. A chemical composition in accordance with claim 1, wherein said source of Mn(IV) is further selected from the group consisting of metallic manganese, pyrolusite, and psilomelane. 11. A chemical composition in accordance with claim 1, wherein said bacteria includes microbial is further selected from the group consisting of Rhizobium spp., Bradyrhizobium spp., Fibrobacter spp., Clostridium spp. Pseudomonas spp., Geobacter spp., Arthrobacter spp., Nocardia spp., Bacillus spp., Aspergillus spp., and Trichoderma spp. 12. A chemical composition in accordance with claim 2, wherein said plant material is selected from the group consisting of cotton lint or other fibrous cotton-containing materials or wastes produced by the cultivation or processing of cotton, cotton plants, and cotton seed. 13. A chemical composition in accordance with claim 2, wherein said plant material is selected from the group consisting of fibrous plant materials or wastes produced by the cultivation or processing of hemp plants or hops plants. 14. A chemical composition in accordance with claim 3, further comprising an inorganic source of electron acceptors and an ammonium-free source of inorganic nutrient nitrogen and either electron-acceptor or nutrient forms of iron and/or manganese for anaerobic microorganisms capable of denitrification processes, selected from the group consisting of ferric nitrate, manganese nitrate, manganese nitrate tetrahydrate, or manganese nitrate hexahydrate. 15. A chemical composition in accordance with claim 1, wherein said bacteria are further selected from the group consisting of microorganisms associated with acid-mine drainage and the waste products produced from the treatment of acid-mine drainage. 16. A chemical composition in accordance with claim 6, wherein said plant material is further selected from one or more of the group consisting of fibrous plant materials and wastes produced by the cultivation or processing of wheat, oats, barley, and rye. 17. A chemical composition in accordance with claims 1, 2, 6, 7, 8, 12, 13, or 16, wherein said components of the composition are in a form selected from the group consisting of powders, flour, pellets, tablets, capsules, meals, mids, husks, hulls, hays, and straws, and combinations thereof. 18. A chemical composition in accordance with claims 1, 2, 6, 7, 8, 12, 13, or 16, wherein said components of the composition are in the dehydrated, dried, or freeze-dried forms. 19. A chemical composition in accordance with any one of claims 1-16, wherein said components of the composition are comprised of medium sand, fine sand, silt- or clay-sized particles, and combinations thereof. 20. A chemical composition in accordance with claims 1, 9, or 10, wherein the proportion of said source of Mn(IV) to said source of iron, by weight, is in the range of 0.01 to 0.75. 21. A chemical composition in accordance with claims 3, 4, or 14, wherein the molar ratios of total nitrate-nitrogen of said nutrient nitrogen to total phosphate-phosphorus of said nutrient phosphorus are in the range of 1:2 to 50:1. 22. A chemical composition in accordance with claims 1, 2, 6, 7, 12, 13, or 16, wherein said plant materials are cultivated in-situ within the contaminated media via the planting and growth of said plants. 23. A chemical composition in accordance with claim 22, wherein said plant materials which are cultivated in-situ are subsequently overwintered in-situ via their exposure to one or more periods of freezing temperatures. 24. A chemical composition in accordance with any one of claims 1-16, wherein any said embodiments of said composition are in the form of pellets, tablets, capsules, or any combinations thereof. 25. A chemical composition in accordance with claim 24, further comprising processing and/or binding agents selected from the group consisting of additional plant-derived materials or wastes, starch, molasses, barley malt extract, corn syrup, vegetable oils, mineral oils, surfactants, oil/water emulsions, fats or lards, animal oils, glycerine, gelatine, bentonite, montmorillonite, kaolinite, calcium carbonate, and portland cement, and any combinations thereof, from 0.01% to 7%, by weight percent, of the composition, wherein the amounts of the other components of the composition by weight are adjusted downward in such manner so as to maintain the relative proportions of said other components. 26. A chemical composition in accordance with any one of claims 1-16 wherein said chemical composition and any embodiment thereof is supplemented with a liquid-chemical composition which contains one or more components selected from the group consisting of nitrates, nitrites, phosphates, surfactants, alcohols, ketones, vegetable oils, mineral oils, sugars, starches, corn syrup, barley malt extract, molasses, humic acids, fulvic acids, chelating agents, and acidifying agents. 27. A method of treating a substance selected from the group comprising: contaminated industrial solid or liquid waste, hazardous solid or liquid wastes, contaminated environmental soils, sediments, waters, aqueous sludges, and mixtures thereof comprising; adding the chemical composition according to any one of claims 1-17 at a dosage rate of 0.15 g to 1000 g per Kg of said substance.