초록 ▼

A pressing member is provided in an accommodating section of a housing to suppress first connector terminals to press down contacts towards a bottom of the accommodating section; when a first card is inserted, a pressing member is not displaced but brings the contacts of the first connector terminal

A pressing member is provided in an accommodating section of a housing to suppress first connector terminals to press down contacts towards a bottom of the accommodating section; when a first card is inserted, a pressing member is not displaced but brings the contacts of the first connector terminals into contact with a contact terminal section of a first card; when a second card is inserted, a bottom face of the second card and the pressing member come into contact with each other to displace the pressing member; and the contacts of the first connector terminals are pressed down by that displacement to a position in which they do not come into contact with the bottom face of the second card.

대표청구항 ▼

A pressing member is provided in an accommodating section of a housing to suppress first connector terminals to press down contacts towards a bottom of the accommodating section; when a first card is inserted, a pressing member is not displaced but brings the contacts of the first connector terminal

A pressing member is provided in an accommodating section of a housing to suppress first connector terminals to press down contacts towards a bottom of the accommodating section; when a first card is inserted, a pressing member is not displaced but brings the contacts of the first connector terminals into contact with a contact terminal section of a first card; when a second card is inserted, a bottom face of the second card and the pressing member come into contact with each other to displace the pressing member; and the contacts of the first connector terminals are pressed down by that displacement to a position in which they do not come into contact with the bottom face of the second card. od according to at least current integration by multiplying the detected current by a predetermined charge efficiency; detecting a temperature of the secondary battery; calculating a variation in a no-load voltage for the predetermined time period, based on the detected current and an internal resistance corresponding to the detected temperature and the residual battery capacity obtained by the operation; calculating a ratio of the variation in the no-load voltage to the variation in the residual battery capacity; and if the ratio of the variation in the no-load voltage to the variation in the residual battery capacity is not less than a predetermined threshold value, judging as memory effect occurring in the secondary battery, the method for resolving a memory effect comprising: if the battery is judged to have a memory effect according to the memory effect detecting method, setting a control range of the residual battery capacity broader than a normal usage range. 5. A method for resolving a memory effect detected by a memory effect detecting method that includes the steps of: detecting a current flowing through a secondary battery configured by combining a plurality of single cells into an assembled battery; performing an operation on a variation in a residual battery capacity for a predetermined time period according to at least current integration by multiplying the detected current by a predetermined charge efficiency; detecting a temperature of the secondary battery; calculating a variation in a no-load voltage for the predetermined time period, based on the detected current and an internal resistance corresponding to the detected temperature and the residual battery capacity obtained by the operation; calculating a ratio of the variation in the no-load voltage to the variation in the residual battery capacity; and if the ratio of the variation in the no-load voltage to the variation in the residual battery capacity is not less than a predetermined threshold value, judging as a memory effect occurring in the secondary battery, the method for resolving a memory effect comprising: if the battery is judged to have a memory effect according to the memory effect detecting method, prohibiting correction of a residual battery capacity obtained by the operation based on a voltage variation for a predetermined time period. 6. A method for detecting a memory effect comprising the steps of: detecting a current flowing through a secondary battery configured by combining a plurality of single cells into an assembled battery and used in a middle charge state; performing an operation on a variation in a residual battery capacity for a predetermined time period according to at least current integration by multiplying the detected current by a predetermined charge efficiency; detecting a temperature of the secondary battery; calculating a variation in a no-load voltage for the predetermined time period, based on the detected current and an internal resistance corresponding to the detected temperature and the residual battery capacity obtained by the operation; calculating a ratio of the variation in the no-load voltage to the variation in the residual battery capacity; and if the ratio of the variation in the no-load voltage to the variation in the residual battery capacity is not less than a predetermined threshold value, judging as a memory effect occurring in the secondary battery. 7. The method for detecting a memory effect according to claim 6, wherein the predetermined charge efficiency is determined based on the detected temperature and the residual battery capacity obtained by the current operation. 8. The method for detecting a memory effect according to claim 6, wherein the predetermined threshold value is determined based on a level of memory effect intended to be judged. 9. A method for resolving a memory effect detected by a memory effect detecting method that includes the steps of: detecting a